Abstract: A method for manufacturing a semiconductor device includes steps of: (a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200° C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.

Abstract: A first substrate 16 has a source material forming surface on which a plurality of source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate 15 has a film forming surface on which the polymerized film will be formed. Here, the first substrate 16 and the second substrate 15 are installed in a processing chamber 2 such that the source material forming surface and the film forming surface face each other. Then, the inside of the processing chamber 2 is maintained under a vacuum atmosphere, and the first substrate 16 is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate 15 is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface.

Abstract: An evaporator includes a heating part that heats and sublimates a solid source material to generate a source gas; a supplying part that is provided above the heating part and supplies the solid source material to the heating part; a gas introduction part to which a carrier gas that transports the source gas generated in the heating part is introduced; and a gas discharging part that discharges the generated source gas along with the carrier gas. The carrier gas introduced from the gas introduction part flows through the heating part.

Abstract: The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.

Abstract: A method for manufacturing a semiconductor device includes steps of:(a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200° C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.

Abstract: The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

Abstract: A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

Abstract: The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.

Abstract: There is provided a method for forming a porous dielectric film stably by: forming a surface densification layer by processing a surface of an SiOCH film formed by a plasma CVD process while using an organic silicon compound source; and releasing CHx groups or OH group from the SiOCH film underneath the surface densification layer by hydrogen plasma processing through the surface densification layer with a controlled rate.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: A semiconductor device manufacturing method capable of preventing an infliction of damage upon an interlayer insulating film and moisture adsorption thereto due to opening to atmosphere in a process of forming a CuSiN barrier by infiltrating Si into a surface of a copper-containing metal film and nitrifying a Si-infiltrated portion is disclosed. When a semiconductor device is manufactured through the processes of preparing a semiconductor substrate having a copper-containing metal film exposed on a surface thereof; purifying a surface of the copper-containing metal film by using radicals or by using a thermo-chemical method; infiltrating Si into the surface of the copper-containing metal film; and nitrifying a Si-infiltrated portion of the copper-containing metal film by radicals, the purification process, the Si introduction process and the nitrification process are successively performed without breaking a vacuum.

Abstract: The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: A heat treatment apparatus selectively heats an object material to be heated so as to achieve energy saving and low-temperature heating. A light source irradiates a light onto a heating material through a transparent window of a process chamber. A controller controls an output of the light source. The heating material is a material to form a layer formed in a wiring process after a semiconductor structure is formed in a semiconductor manufacturing process. The light irradiated by the light source has a specific wavelength at which an optical absorption factor of the heating material is larger than at other wavelengths. The transparent window is formed of a material that passes therethrough the light having the specific wavelength.

Abstract: A process gas constituted by a compound having a ring structure in its molecules is introduced into a chamber (12). In the meantime, an excitation gas such as argon, etc. is excited by an activator (34) and introduced into the chamber (12), so that the process gas is excited. The excited process gas is deposited on a process target substrate (19), forming a porous low dielectric constant film having ring structures in the film.

Abstract: 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane (V3D3) and isopropyl alcohol (IPA) are supplied to a chamber 12, and they are excited by plasma to generate molecular active species of these compounds. These active species are reacted in the vicinity of the surface of a substrate to form an insulating thin film with a thickness of, for example, 50 nm containing IPA molecules. Moreover, the IPA molecules contained in the thin film are selectively desorbed by plasma process using ammonium gas to form uniform holes in the thickness direction. The film forming process and the hole forming process are repeatedly executed by a plurality of times, thereby making it possible to obtain an insulating film with a predetermined thickness and holes formed uniformly.