Patents by Inventor Yu-Shan Cheng
Yu-Shan Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961899Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.Type: GrantFiled: January 23, 2023Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Chao-Cheng Chen
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Publication number: 20230352479Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.Type: ApplicationFiled: June 29, 2023Publication date: November 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Ming-Ching Chang
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Patent number: 11721693Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.Type: GrantFiled: January 11, 2021Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Ming-Ching Chang
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Patent number: 11563105Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.Type: GrantFiled: April 14, 2021Date of Patent: January 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Chao-Cheng Chen
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Publication number: 20220336625Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.Type: ApplicationFiled: April 14, 2021Publication date: October 20, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Chao-Cheng Chen
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Publication number: 20220310819Abstract: A semiconductor device includes a channel structure, extending along a first lateral direction, that is disposed over a substrate. The semiconductor device includes a gate structure, extending along a second lateral direction perpendicular to the first lateral direction, that straddles the channel structure. The semiconductor device includes an epitaxial structure, coupled to the channel structure, that is disposed next to the gate structure. The semiconductor device includes a first gate spacer and a second gate spacer each comprising a first portion disposed between the gate structure and the epitaxial structure along the first lateral direction. The semiconductor device includes an air gap interposed between the first portion of the first gate spacer and the first portion of the second gate spacer. The air gap exposes a second portion of the first gate spacer that extends in the first lateral direction.Type: ApplicationFiled: October 4, 2021Publication date: September 29, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Ming-Ching Chang
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Publication number: 20220223587Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.Type: ApplicationFiled: January 11, 2021Publication date: July 14, 2022Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Ming-Ching Chang
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Publication number: 20100026168Abstract: The present invention discloses a photo-curable hole-transport material used in a polymer light-emitting diode. The photo-curable hole-transport material comprises at least one first conjugate structure, at least one connecting structure, and at least one second conjugate structure. The first conjugate structure is a triarylamine derivative. The second conjugate structure is a carbazole derivative. The connecting structure is derived from one structure selected from the group consisting of the following or the combination thereof: urethane and urea structures.Type: ApplicationFiled: January 21, 2009Publication date: February 4, 2010Applicant: National Taiwan UniversityInventors: Kuo-Huang Hsieh, Man-Kit Leung, Wen-Chang Chen, Cheng-Hsiu Ku, Chih-Yu Chen, Cheng-Dar Liu, Ching-Nan Chuang, Yu-Shan Cheng