Abstract: In an example, a memory device includes a first stack structure and a second stack structure over the first stack structure. Each of the first stack structure and the second stack structure includes alternately stacked conductor layers and first insulating layers. The memory device also includes a first channel structure extending through the first stack structure, and a second channel structure extending through the second stack structure and connected with the first channel structure. A width of an end of the first channel structure closer to the second channel structure is greater than that of the second channel structure closer to the first channel structure. The memory device further includes a pillar structure extending through the first stack structure and the second stack structure. The pillar structure includes a metal layer.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the disclosed method comprises forming a plurality of dielectric stacks stacked on one another over a substrate to create a multiple-stack staircase structure. Each one of the plurality of dielectric stacks comprises a plurality of dielectric pairs arranged along a direction perpendicular to a top surface of the substrate. The method further comprises forming a filling structure that surrounds the multiple-stack staircase structure, forming a semiconductor channel extending through the multiple-staircase structure, wherein the semiconductor channel comprises unaligned sidewall surfaces, and forming a supporting pillar extending through at least one of the multiple-staircase structure and the filling structure, wherein the supporting pillar comprises aligned sidewall surfaces.

Abstract: A rotor assembly, a compressor and an air conditioner. The rotor assembly includes a first rotor, including a first working portion and a second working portion coaxially arranged, wherein the first working portion and the second working portion are rotatable about a first axis; the first working portion includes a plurality of first helical blades, with a first blade groove being formed between adjacent two of the plurality of first helical blades; at least one first air pressure groove is provided on a first end face of the first working portion away from the second working portion; and the first air pressure groove is configured to form a force in a predetermined direction along the first axis when rotating. The rotor assembly can reduce costs of the compressor, simplify structures of moving parts of the compressor, and improve performance and reliability of the compressor.

Abstract: Embodiments of a channel hole plug structure of 3D memory devices and fabricating methods thereof are disclosed. The memory device includes an alternating layer stack disposed on a substrate, an insulating layer disposed on the alternating dielectric stack, a channel hole extending vertically through the alternating dielectric stack and the insulating layer, a channel structure including a channel layer in the channel hole, and a channel hole plug in the insulating layer and above the channel structure. The channel hole plug is electrically connected with the channel layer. A projection of the channel hole plug in a lateral plane covers a projection of the channel hole in the lateral plane.

Abstract: A method includes configuring a switched capacitor converter to operate in a first fixed PWM mode, wherein in the first fixed PWM mode, the switched capacitor converter is configured to charge a battery coupled to an input of the switched capacitor converter, configuring the switched capacitor converter to operate in a second fixed PWM mode, wherein in the second fixed PWM mode, the switched capacitor converter is configured to discharge the battery, and configuring the switched capacitor converter to operate in a skip mode, wherein the switched capacitor converter has automatic transitions among different modes based on comparisons between an output voltage of the switched capacitor converter and a plurality of predetermined voltage thresholds.

Abstract: A method includes configuring a switched capacitor converter to operate in a first fixed PWM mode, wherein in the first fixed PWM mode, the switched capacitor converter is configured to charge a battery coupled to an input of the switched capacitor converter, configuring the switched capacitor converter to operate in a second fixed PWM mode, wherein in the second fixed PWM mode, the switched capacitor converter is configured to discharge the battery, and configuring the switched capacitor converter to operate in a skip mode, wherein the switched capacitor converter has automatic transitions among different modes based on comparisons between an output voltage of the switched capacitor converter and a plurality of predetermined voltage thresholds.

Abstract: Elements of the present disclosure provide a LED display module, a display device and a method of manufacturing a display module, and belongs to the field of display device. A LED display module includes: a substrate, a plurality of inorganic LED chips, control circuits, a photoluminescent layer and a transparent cover plate.