Patents by Inventor Yusuke Hirayama
Yusuke Hirayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11705313Abstract: An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount of the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.Type: GrantFiled: March 5, 2021Date of Patent: July 18, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Hirayama, Shu Kusano
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Publication number: 20220148771Abstract: A single crystal particle powder having a crystal structure of TbCu7-type of the present invention is represented by the general formula: [Chemical Formula 1] (R1-zMz)Tx??(1) or the general formula: [Chemical Formula 2] (R1-zMz)TxNy??(2) and has a crystal structure of TbCu7-type, wherein R is at least one element selected from the group consisting of Sm and Nd, T is at least one element selected from the group consisting of Fe and Co, x is 7.0?x?10.0, y is 1.0?y?2.0, and z is 0.0?z?0.3.Type: ApplicationFiled: March 13, 2020Publication date: May 12, 2022Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Yusuke HIRAYAMA, Akihide HOSOKAWA, Kenta TAKAGI
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Patent number: 11183374Abstract: There is provision of a plasma processing apparatus including a chamber; a gas inlet for supplying a first gas containing fluorine and supplying a second gas into the chamber; a plasma generator configured to generate a plasma from the first gas and the second gas supplied into the chamber; an optical emission spectrometer (OES) configured to measure light emission intensities of first radicals and second radicals in the plasma, the first radicals originating from the first gas, the second radicals originating from the second gas; an expendable part disposed in the chamber; and a processor configured to determine a wastage rate of the expendable part based on the measured light emission intensities of the first radicals and the second radicals.Type: GrantFiled: July 22, 2020Date of Patent: November 23, 2021Assignee: Tokyo Electron LimitedInventors: Shu Kusano, Yusuke Hirayama
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Publication number: 20210280401Abstract: An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.Type: ApplicationFiled: March 5, 2021Publication date: September 9, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Yusuke HIRAYAMA, Shu KUSANO
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Publication number: 20200350148Abstract: There is provision of a plasma processing apparatus including a chamber; a gas inlet for supplying a first gas containing fluorine and supplying a second gas into the chamber; a plasma generator configured to generate a plasma from the first gas and the second gas supplied into the chamber; an optical emission spectrometer (OES) configured to measure light emission intensities of first radicals and second radicals in the plasma, the first radicals originating from the first gas, the second radicals originating from the second gas; an expendable part disposed in the chamber; and a processor configured to determine a wastage rate of the expendable part based on the measured light emission intensities of the first radicals and the second radicals.Type: ApplicationFiled: July 22, 2020Publication date: November 5, 2020Inventors: Shu Kusano, Yusuke Hirayama
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Patent number: 10763089Abstract: There is provision of a method of determining wastage including: processing a substrate using a plasma generated by multiple gases including fluorine gas; obtaining light emission intensity of each gas of the multiple gases including fluorine gas from the plasma, by an optical emission spectrometer (OES); and calculating a wastage rate of a particular expendable part from the obtained light emission intensity of each gas of the multiple gases including fluorine gas, with reference to a storage section storing a wastage rate of the particular expendable part in association with the light emission intensity of each gas of the multiple gases including fluorine gas.Type: GrantFiled: December 14, 2017Date of Patent: September 1, 2020Assignee: Tokyo Electron LimitedInventors: Shu Kusano, Yusuke Hirayama
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Publication number: 20190378698Abstract: There is provision of a method of determining wastage including: processing a substrate using a plasma generated by multiple gases including fluorine gas; obtaining light emission intensity of each gas of the multiple gases including fluorine gas from the plasma, by an optical emission spectrometer (OES); and calculating a wastage rate of a particular expendable part from the obtained light emission intensity of each gas of the multiple gases including fluorine gas, with reference to a storage section storing a wastage rate of the particular expendable part in association with the light emission intensity of each gas of the multiple gases including fluorine gas.Type: ApplicationFiled: December 14, 2017Publication date: December 12, 2019Inventors: Shu KUSANO, Yusuke HIRAYAMA
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Patent number: 10290476Abstract: A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.Type: GrantFiled: September 25, 2015Date of Patent: May 14, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Hirayama, Masaaki Miyagawa
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Patent number: 10068778Abstract: This plasma processing method includes a film formation step, a plasma processing step and a removal step. In the film formation step, a silicon oxide film is formed on the surface of a member within a chamber by means of plasma of an oxygen-containing gas and a silicon-containing gas at a flow rate ratio of the oxygen-containing gas to the silicon-containing gas of 0.2-1.4. In the plasma processing step, after the formation of the silicon oxide film on the surface of the member, an object to be processed that has been carried into the chamber is subjected to plasma processing with use of plasma of a processing gas. In the removal step, after carrying the plasma-processed object out of the chamber, the silicon oxide film is removed from the surface of the member by means of plasma of a fluorine-containing gas.Type: GrantFiled: May 20, 2015Date of Patent: September 4, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Hirayama, Masaaki Miyagawa
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Publication number: 20170316919Abstract: A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.Type: ApplicationFiled: September 25, 2015Publication date: November 2, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Yusuke HIRAYAMA, Masaaki MIYAGAWA
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Publication number: 20170076956Abstract: This plasma processing method includes a film formation step, a plasma processing step and a removal step. In the film formation step, a silicon oxide film is formed on the surface of a member within a chamber by means of plasma of an oxygen-containing gas and a silicon-containing gas at a flow rate ratio of the oxygen-containing gas to the silicon-containing gas of 0.2-1.4. In the plasma processing step, after the formation of the silicon oxide film on the surface of the member, an object to be processed that has been carried into the chamber is subjected to plasma processing with use of plasma of a processing gas. In the removal step, after carrying the plasma-processed object out of the chamber, the silicon oxide film is removed from the surface of the member by means of plasma of a fluorine-containing gas.Type: ApplicationFiled: May 20, 2015Publication date: March 16, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Yusuke HIRAYAMA, Masaaki MIYAGAWA
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Patent number: 8975188Abstract: A plasma etching method is provided for forming a hole using a first processing gas to etch a silicon layer of a substrate to be processed including a silicon oxide film that is formed into a predetermined pattern. The method includes a first depositing step (S11) of depositing a protective film on a surface of the silicon oxide film using a second processing gas containing carbon monoxide gas, a first etching step (S12) of etching the silicon layer using the first processing gas, a second depositing step (S13) of depositing the protective film on a side wall of a hole etched by the first etching step using the second processing gas, and a second etching step (S14) of further etching the silicon layer using the first processing gas. The second depositing step (S13) and the second etching step (S14) are alternately repeated at least two times each.Type: GrantFiled: July 10, 2012Date of Patent: March 10, 2015Assignee: Tokyo Electron LimitedInventors: Yusuke Hirayama, Kazuhito Tohnoe
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Patent number: 8975191Abstract: There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the resist mask and the intermediate layer, a second process of subsequently supplying a chlorine gas to the substrate to cause a reaction product to attach onto sidewalls of opening portions of the resist mask and the intermediate layer, and a third process of etching a portion of the silicon layer corresponding to the opening portion of the intermediate layer using a process gas containing sulfur and fluorine to form a recess in the silicon layer.Type: GrantFiled: February 7, 2012Date of Patent: March 10, 2015Assignee: Tokyo Electron LimitedInventors: Kazuhito Tohnoe, Yusuke Hirayama, Yasuyoshi Ishiyama, Wataru Hashizume
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Patent number: 8821683Abstract: A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.Type: GrantFiled: April 25, 2006Date of Patent: September 2, 2014Assignee: Tokyo Electron LimitedInventors: Yusuke Hirayama, Kazuya Nagaseki
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Publication number: 20140134846Abstract: A plasma etching method is provided for forming a hole using a first processing gas to etch a silicon layer of a substrate to be processed including a silicon oxide film that is formed into a predetermined pattern. The method includes a first depositing step (S11) of depositing a protective film on a surface of the silicon oxide film using a second processing gas containing carbon monoxide gas, a first etching step (S12) of etching the silicon layer using the first processing gas, a second depositing step (S13) of depositing the protective film on a side wall of a hole etched by the first etching step using the second processing gas, and a second etching step (S14) of further etching the silicon layer using the first processing gas. The second depositing step (S13) and the second etching step (S14) are alternately repeated at least two times each.Type: ApplicationFiled: July 10, 2012Publication date: May 15, 2014Inventors: Yusuke Hirayama, Kazuhito Tohnoe
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Patent number: 8716144Abstract: A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.Type: GrantFiled: November 17, 2010Date of Patent: May 6, 2014Assignee: Tokyo Electron LimitedInventors: Shuichiro Uda, Koji Maruyama, Yusuke Hirayama
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Patent number: 8664117Abstract: Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; anisotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.Type: GrantFiled: March 4, 2011Date of Patent: March 4, 2014Assignee: Tokyo Electron LimitedInventors: Katsuyuki Ono, Yusuke Hirayama, Hideyuki Hatoh
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Publication number: 20140045338Abstract: There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the resist mask and the intermediate layer, a second process of subsequently supplying a chlorine gas to the substrate to cause a reaction product to attach onto sidewalls of opening portions of the resist mask and the intermediate layer, and a third process of etching a portion of the silicon layer corresponding to the opening portion of the intermediate layer using a process gas containing sulfur and fluorine to form a recess in the silicon layer.Type: ApplicationFiled: February 7, 2012Publication date: February 13, 2014Inventors: Kazuhito Tohnoe, Yusuke Hirayama, Yasuyoshi Ishiyama, Wataru Hashizume
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Patent number: 8558134Abstract: A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.Type: GrantFiled: March 25, 2009Date of Patent: October 15, 2013Assignee: Tokyo Electron LimitedInventor: Yusuke Hirayama
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Publication number: 20130052821Abstract: Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; isotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.Type: ApplicationFiled: March 4, 2011Publication date: February 28, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Katsuyuki Ono, Yusuke Hirayama, Hideyuki Hatoh