Abstract: A resonator device includes an element substrate provided with a resonator element having a first excitation electrode arranged on one surface and a second excitation electrode arranged on another surface, and a frame surrounding the resonator element, a lid substrate bonded to one surface of the frame, a base substrate bonded to another surface of the frame, and a semiconductor element including an oscillation circuit electrically coupled to the resonator element, wherein the frame, the lid substrate, and the base substrate form a cavity for housing the resonator element and the semiconductor element, the base substrate includes a first wiring line which is arranged on a surface faced to the second excitation electrode, and electrically couples the first excitation electrode and the semiconductor element to each other, and the first wiring line is arranged at a position which fails to overlap the second excitation electrode in a plan view.

Abstract: A vibrator device includes a vibrator element, a container in which the vibrator element is housed, a circuit which is disposed in the container, and which overlaps the vibrator element in a plan view, and an inductor which is disposed in the container, which fails to overlap the vibrator element in the plan view, and which is electrically coupled to the circuit. The container includes at least a first member and a second member, and a bonding area configured to bond the first member and the second member to each other, and the inductor is disposed in the bonding area.

Abstract: A resonator device includes a base and a resonator component disposed on the base. The base includes a semiconductor substrate having a first surface and a second surface that are in a front-to-back relation with each other; an integrated circuit that includes a wiring layer disposed at the second surface side and including a connection pad and includes an insulating layer disposed between the second surface and the wiring layer; a through electrode that penetrates the semiconductor substrate and the insulating layer and is coupled to the connection pad; and an annular metal layer that is disposed so as to penetrate the insulating layer between the second surface and the wiring layer and surrounds the through electrode in a plan view of the semiconductor substrate.

Abstract: A vibrator device includes a semiconductor substrate, a vibrator unit, a cover, and an insulating film. The vibrator unit is disposed at a first surface of the semiconductor substrate, and includes a vibrator element, and an excitation electrode disposed at the vibrator element and having a portion facing the semiconductor substrate. The cover is bonded to the first surface in a joint portion surrounding the vibrator unit. The insulating film is disposed at the first surface. The insulating film overlaps the portion of the excitation electrode in plan view, and is absent at the joint portion of the semiconductor substrate and the cover.

Abstract: Provided is a local polishing technique suitable for corrective polishing. Press polishing is performed while supplying a polishing solution between a work and a work-polishing rotating tool locally pressed against the work, the polishing solution having abrasive grains composed of organic particles with an average particle size of 5 ?m or more dispersed in a liquid. The rotating tool is made of an elastic material.

Abstract: A vibrator device includes a vibrator element, a container in which the vibrator element is housed, a circuit which is disposed in the container, and which overlaps the vibrator element in a plan view, and an inductor which is disposed in the container, which fails to overlap the vibrator element in the plan view, and which is electrically coupled to the circuit. The container includes at least a first member and a second member, and a bonding area configured to bond the first member and the second member to each other, and the inductor is disposed in the bonding area.

Abstract: A vibration device includes: a first substrate including a first surface and a second surface located at an opposite side of the first surface, and a first integrated circuit disposed on at least one of the first surface and the second surface; a second substrate including a third surface bonded to the second surface, a fourth surface located at an opposite side of the third surface, a recess that opens to the third surface, and a second integrated circuit disposed on the fourth surface; and a vibration element accommodated in a space defined by an opening of the recess being closed by the first substrate.

Abstract: A vibration device includes: a first substrate including a first surface and a second surface located at an opposite side of the first surface, and a first integrated circuit disposed on at least one of the first surface and the second surface; a second substrate including a third surface bonded to the second surface, a fourth surface located at an opposite side of the third surface, a recess that opens to the third surface, and a second integrated circuit disposed on the fourth surface; and a vibration element accommodated in a space defined by an opening of the recess being closed by the first substrate.

Abstract: A vibrator device includes a silicon substrate having a through hole, a first terminal placed on a first surface of the silicon substrate, a second terminal placed on a second surface opposite to the first surface of the silicon substrate, a wire passing the through hole and electrically coupling the first terminal and the second terminal, a resin layer placed between the wire and an inner wall defining the through hole, a silicon oxide layer placed between the resin layer and the inner wall, and a vibrator element bonded to the first terminal.

Abstract: A vibrator device includes a silicon substrate having a through hole, a first terminal placed on a first surface of the silicon substrate, a second terminal placed on a second surface opposite to the first surface of the silicon substrate, a wire passing the through hole and electrically coupling the first terminal and the second terminal, a resin layer placed between the wire and an inner wall defining the through hole, a silicon oxide layer placed between the resin layer and the inner wall, and a vibrator element bonded to the first terminal.

Abstract: A vibrator device includes a semiconductor substrate, a vibrator unit, a cover, and an insulating film. The vibrator unit is disposed at a first surface of the semiconductor substrate, and includes a vibrator element, and an excitation electrode disposed at the vibrator element and having a portion facing the semiconductor substrate. The cover is bonded to the first surface in a joint portion surrounding the vibrator unit. The insulating film is disposed at the first surface. The insulating film overlaps the portion of the excitation electrode in plan view, and is absent at the joint portion of the semiconductor substrate and the cover.

Abstract: A pressure sensor includes a substrate which includes a diaphragm that is flexurally deformed by receiving a pressure, a piezoresistive element which is provided in the diaphragm; and a protective film which is provided on one surface side of the diaphragm. The protective film includes a thin section and a thick section which is thicker than the thin section. Further, in a plan view of the substrate, the thin section overlaps with the piezoresistive element, and the thick section overlaps with at least a part of the diaphragm.

Abstract: A pressure sensor includes a substrate which has a diaphragm that is flexurally deformed by receiving a pressure, a side wall section which is placed on one surface side of the substrate and surrounds the diaphragm in a plan view, and a sealing layer which is placed so as to face the diaphragm through a space and seals the space, wherein the sealing layer includes a first silicon layer which has a through-hole facing the space, a silicon oxide layer which is located on the opposite side to the space with respect to the first silicon layer and seals the through-hole, and a second silicon layer which is located on the opposite side to the space with respect to the silicon oxide layer.

Abstract: A pressure sensor includes a substrate which has a diaphragm that is flexurally deformed by receiving a pressure, a side wall section which is placed on one surface side of the substrate and surrounds the diaphragm in a plan view, and a sealing layer which is placed so as to face the diaphragm through a space surrounded by the side wall section and seals the space, wherein the sealing layer includes a first silicon layer, a second silicon layer which is located on the opposite side to the substrate with respect to the first silicon layer, and a silicon oxide layer which is located between the first silicon layer and the second silicon layer, and the silicon oxide layer is sealed from the outside by being covered with the second silicon layer.

Abstract: A pressure sensor has a substrate having a diaphragm, a cavity portion that is positioned on one side of the diaphragm, and a ceiling portion that is disposed opposite to the diaphragm via the cavity portion, and unevenness is formed on a surface of the substrate facing the cavity portion. In addition, the unevenness has a plurality of recessed portions.

Abstract: A physical quantity sensor includes a substrate, a piezoresistive element that is arranged on one face side of the substrate, a wall portion that is arranged to surround the piezoresistive element on the one face side of the substrate in a plan view of the substrate, and a ceiling portion that constitutes a cavity portion with the wall portion, in which the ceiling portion includes a cladding layer that has a pore which passes therethrough in the thickness direction of the cladding layer, and a seal layer that is stacked on the opposite side of the cladding layer from the substrate and closes the pore, the seal layer in which at least a part of the outer periphery of a contact portion where the seal layer is in contact with the cladding layer is on the outside of the cavity portion in a plan view.

Abstract: A pressure sensor includes a substrate that has a diaphragm which bends and deforms by receiving pressure and a displacement regulating unit that regulates deformation of the diaphragm, in which the diaphragm and the displacement regulating unit are spaced away from each other in a first state where the diaphragm receives pressure within a measurable range, and the diaphragm and the displacement regulating unit come into contact with each other in a second state where the diaphragm receives pressure exceeding the measurable range.

Abstract: A pressure sensor includes a silicon substrate which has a diaphragm, a frame-shaped side wall section which is placed on one surface side of the silicon substrate so as to surround the diaphragm in a plan view, a lid section which is placed so as to cover an opening of the side wall section and has a through-hole communicating inside and outside the side wall section, a sealing section which is placed on the lid section and seals the through-hole, and a pressure reference chamber which is defined by the silicon substrate, the side wall section, the lid section, and the sealing section, wherein a surface facing the pressure reference chamber of each of the side wall section and the lid section contains a silicon material.

Abstract: A pressure sensor has a substrate having a diaphragm, a cavity portion that is positioned on one side of the diaphragm, and a ceiling portion that is disposed opposite to the diaphragm via the cavity portion, and unevenness is formed on a surface of the substrate facing the cavity portion. In addition, the unevenness has a plurality of recessed portions.

Abstract: A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.