Abstract: According to one embodiment, a semiconductor memory device includes: a plurality of first insulating layers; a plurality of first interconnect layers stacked alternately with the first insulating layers; a plurality of second interconnect layers arranged adjacently to the first interconnect layers; and a separation region including a plurality of first portions provided between the first interconnect layers and the second interconnect layers, and a plurality of second portions protruding from an outer periphery of each of the first portions. The second portions are linked to each other. The first interconnect layers and the second interconnect layers are separated from each other by the first portions and the linked second portions.

Abstract: A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers. The semiconductor memory device includes a plurality of first films different from the first conductive layers disposed in same layers as the plurality of first conductive layers in the second region and a plurality of second films different from the second conductive layers and the first films disposed in same layers as the plurality of second conductive layers in the second region.

Abstract: A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers. The semiconductor memory device includes a plurality of first films different from the first conductive layers disposed in same layers as the plurality of first conductive layers in the second region and a plurality of second films different from the second conductive layers and the first films disposed in same layers as the plurality of second conductive layers in the second region.

Abstract: A wiper structure for a resin window includes a wiper configured to wipe a part of a surface of the resin window. The wiper has an elastic wiper rubber and a wiper holder configured to hold the wiper rubber. The wiper rubber has a holding base portion, a lip portion, a body portion, and a neck portion. The lip portion is in contact with the resin window. In the lip portion, a ratio of a lip length in the direction toward the surface of the resin window to a lip thickness in the thickness direction is greater than 0 and less than or equal to 2.3.

Abstract: A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers. The semiconductor memory device includes a plurality of first films different from the first conductive layers disposed in same layers as the plurality of first conductive layers in the second region and a plurality of second films different from the second conductive layers and the first films disposed in same layers as the plurality of second conductive layers in the second region.

Abstract: According to one embodiment, a semiconductor memory device includes: a plurality of first insulating layers; a plurality of first interconnect layers stacked alternately with the first insulating layers; a plurality of second interconnect layers arranged adjacently to the first interconnect layers; and a separation region including a plurality of first portions provided between the first interconnect layers and the second interconnect layers, and a plurality of second portions protruding from an outer periphery of each of the first portions. The second portions are linked to each other. The first interconnect layers and the second interconnect layers are separated from each other by the first portions and the linked second portions.

Abstract: A vehicle roof structure includes a solar cell unit having a plurality of solar cells arranged in a planar form at intervals from one another, a roof panel disposed to cover the solar cell unit from above, and a reinforcing member disposed under the solar cell unit. The reinforcing member supports the solar cell unit with a plurality of supporting parts provided at positions corresponding to the intervals left between the plurality of solar cells. The vehicle roof structure can prevent the solar cells from breaking down under stress.

Abstract: A vehicle roof structure includes a solar cell unit having a plurality of solar cells arranged in a planar form at intervals from one another, a roof panel disposed to cover the solar cell unit from above, and a reinforcing member disposed under the solar cell unit. The reinforcing member supports the solar cell unit with a plurality of supporting parts provided at positions corresponding to the intervals left between the plurality of solar cells. The vehicle roof structure can prevent the solar cells from breaking down under stress.