Abstract: A fluid transferer, including a volume changing part; a reciprocating member configured to reciprocate to expand a volume of the volume changing part to draw a fluid from an upstream side of a transfer direction and compress the volume thereof to transfer the drawn fluid to a downstream side thereof with pressure; and a drive controller configured to control reciprocation of the reciprocating member such that a time for compressing the volume of the volume changing part is longer than a time for expanding the volume thereof.

Abstract: The touch panel controller activates a touch panel having a detection plane superposed on a display plane of a display device, and performs a touch detection. The touch panel controller uses a cycle of 1/n (n is a positive integer) of a display frame cycle on the display plane as the detection frame cycle of the detection plane. The touch panel controller decides an order of driving the detection-scan electrodes in each detection frame cycle according to predetermined phase-delay and phase-advance positions with respect to a display-scan electrode drive position of the display device so as to correspond to an order of the detection-scan electrode array of the touch panel. The touch panel controller makes possible to avoid the coincidence of display-scan and touch-detection positions without thinning touch detections even with the detection frame cycle of a touch sensor shorter than the display frame cycle of a liquid crystal panel.

Abstract: The display driving circuit includes: an OD (OverDrive) calculation circuit operable to generate an OD driving signal for improving the response characteristic of a display device according to display image data; a drive-output circuit operable to supply an OD driving signal to the display device; and a compression circuit operable to store compressed display data in a memory. The compression circuit includes a DCT calculation module operable to execute DCT (Discrete Cosine Transform) of display image data, and an entropy coding module operable to execute variable length entropy coding of DCT conversion display data. Preferably, the display driving circuit further includes a decompression circuit operable to supply an OD calculation circuit with display data resulting from decompression of compressed display data read out the memory.

Abstract: A fluid transferer, including a volume changing part; a reciprocating member configured to reciprocate to expand a volume of the volume changing part to draw a fluid from an upstream side of a transfer direction and compress the volume thereof to transfer the drawn fluid to a downstream side thereof with pressure; and a drive controller configured to control reciprocation of the reciprocating member such that a time for compressing the volume of the volume changing part is longer than a time for expanding the volume thereof.

Abstract: A sieving device including a hollow cylindrical body, a filter disposed at a bottom portion of the hollow cylindrical body, and a blade configured to rotate in close proximity to the filter around a rotation axis thereof crossing the filter to thereby stir powder supplied to the hollow cylindrical body.

Abstract: A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

Abstract: The display driving circuit includes: an OD (OverDrive) calculation circuit operable to generate an OD driving signal for improving the response characteristic of a display device according to display image data; a drive-output circuit operable to supply an OD driving signal to the display device; and a compression circuit operable to store compressed display data in a memory. The compression circuit includes a DCT calculation module operable to execute DCT (Discrete Cosine Transform) of display image data, and an entropy coding module operable to execute variable length entropy coding of DCT conversion display data. Preferably, the display driving circuit further includes a decompression circuit operable to supply an OD calculation circuit with display data resulting from decompression of compressed display data read out the memory.

Abstract: A probe transmitting section (216) in a packet receiving terminal (210) sends a probe packet to a second radio channel (320) at fixed intervals. A probe analyzing section (117) in a packet sending terminal (110) detects a burst loss on the basis of a state of reception of the probe packet. When a burst loss detection is detected, a predictive retransmission control section (118) predicts that a data packet transmitted during the period of the detected burst loss among data packets sent from a priority processing transmission buffer (115) to a first radio channel (310) is a data packet lost on a receiving side, reads the data packet from a retransmission buffer (114), and then sends the data packet to the priority processing transmission buffer (115). A real-time property can be ensured while a packet loss is overcome in a radio environment.

Abstract: Overdrive over multiple frames is made more efficient in a display device drive circuit that drives a display device so slow in response that target brightness is not reached even after overdrive is performed for one frame. When a display gray scale is changed from a first gray scale to a second gray scale, a display driving device varies overdrive driving voltage according to the number of frames since the point of time of the change. This makes it possible to obtain high-speed luminance response. When the number of frames for which an identical image is continuously displayed is known beforehand, the number of frames is set in a display pattern setting register and a function of detecting timing of a change of images is provided. This enables efficient overdrive. At low temperature, further, a display image is updated once for several frames according to temperature information. This enhances the visibility of the image.

Abstract: The present invention is directed to improve efficiency in use of a memory for storing display data which is used for an overdrive process. A display driver for driving a display device compresses image display data, stores the compressed data into a memory, and generates a preceding frame by decompressing the data read from the memory. A setting unit divides a display screen of the display device into, for example, a first region as a center part and a second region as a peripheral part. An overdrive computing unit generates overdrive display data in response to a present-time frame and the preceding frame, compresses the image display data in the first and second regions at first and second data compression ratios of small and large values, respectively, and stores the compressed data into the memory. By saving the space of the memory, the picture quality in the first region is improved.

Abstract: A feature vector computation apparatus includes a content obtaining unit that obtains a content; a key frame extractor that detects an instantaneous cut point in the content obtained by the content obtaining unit, and extracts two frames as key frames from the content, based on the instantaneous cut point; a feature vector computation target region extractor that extracts a feature vector computation target region from the two key frame extracted by the key frame extractor; and a feature vector computation unit that computes a feature vector from the feature vector computation target region extracted by the feature vector computation target region extractor.

Abstract: In accordance with an exemplary aspect of the present invention, a thin film transistor array substrate includes a transparent insulating substrate, and a thin film transistor for pixel switching and a thin film transistor for a drive circuit formed on the transparent insulating substrate, wherein the thin film transistor for a drive circuit includes an amorphous silicon film formed on the transparent insulating film, a microcrystalline silicon film formed on the amorphous silicon film, a first source electrode and a first drain electrode formed on the microcrystalline silicon film, the first source electrode and the first drain electrode being opposed with a first channel area interposed therebetween, a protective insulating film that covers the first source electrode and the first drain electrode, and an upper gate electrode formed so as to be opposed to the first channel area with the protective insulating film interposed therebetween.

Abstract: A probe transmitting section (216) in a packet receiving terminal (210) sends a probe packet to a second radio channel (320) at fixed intervals. A probe analyzing section (117) in a packet sending terminal (110) detects a burst loss on the basis of a state of reception of the probe packet. When a burst loss detection is detected, a predictive retransmission control section (118) predicts that a data packet transmitted during the period of the detected burst loss among data packets sent from a priority processing transmission buffer (115) to a first radio channel (310) is a data packet lost on a receiving side, reads the data packet from a retransmission buffer (114), and then sends the data packet to the priority processing transmission buffer (115). A real-time property can be ensured while a packet loss is overcome in a radio environment.

Abstract: A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

Abstract: The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film.

Abstract: There is provided a thin-film transistor being capable of reducing dispersion in threshold voltage and a method of fabricating the same. The thin-film transistor includes an insulating undercoating layer formed for a substrate, a semiconductor active layer of polycrystalline silicon formed on the insulating undercoating layer, and a gate electrode formed insulated on the semiconductor active layer, the insulating undercoating layer being of a silicon oxide film layer formed using TEOS as a material and by a plasma CVD method. Preferably, the concentration of carbon atoms of the silicon oxide film layer is within a range of 6×1019 atoms/cm3 to 1×1020 atoms/cm3 and the concentration of nitride atoms is not more than 3×1019 atoms/cm3.

Abstract: A control method of assigning a channel so as to cope flexibly with voice and high speed data communication services having different transmission rates in code-division multiple connection communications. A load required for a channel processing is compared with an allowable load, and a channel is assigned within the allowable load. When assignment of a busy channel is changed so as to be processed in another hardware, the synchronization of the processing is established first at the destination, then the channel is switched. It is thus possible to distribute hardware resources and software processings efficiently to users.