Abstract: A photovoltaic element includes: a semiconductor substrate; a first i-type semiconductor film provided on a part of one of surfaces of the semiconductor substrate; a first semiconductor region including a first-conductivity-type semiconductor film provided on the first i-type semiconductor film; a first electrode layer provided on the first semiconductor region; a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer.

Abstract: Provided is an aqueous gravure ink that is environmentally friendly, allows high-resolution printing by virtue of its excellent highlight suitability, and is excellent in drying property. The aqueous gravure ink comprises: a pigment; a polymer; a water-soluble organic solvent; a surfactant; and water, in which the water-soluble organic solvent has a boiling point of 100° C. or more and 260° C. or less, in which a content of the water-soluble organic solvent in the aqueous gravure ink is 10 mass % or more and 35 mass % or less, and in which a content of the water in the aqueous gravure ink is 50 mass % or more and 70 mass % or less.

Abstract: Provided is a gravure printing method by which high printing density and excellent highlight suitability are obtained, even if a gravure plate having high resolution and reduced thickness is used. The gravure printing method comprises: using an aqueous ink having a Zahn cup #3 viscosity at 20° C. of 11.0 seconds or more and 20.0 seconds or less, and having an evaporation rate of 30 mass % or less in a drying test, the drying test involving drying 1 g of the ink at a temperature of 40° C. and an air flow of 1,400 L/min for 30 minutes; and transferring 1 ml/m2 or more and 7 ml/m2 or less of the ink onto a printing medium.

Abstract: An information presentation apparatus is provided. A light emission device (40) and a HCU (100) are mounted on a vehicle A together with a device having a driving assist function for assisting a driving operation of a driver or taking a wheel. The light emission device is arranged on an instrument panel of the vehicle (A), and displays at least one light emission spot (51) in a linear light emission area (52) arranged to extend in a width direction (WD) of the vehicle. The HCU acquires operation information about the driving assist function, and controls a light emission mode of the light emission spot in the linear light emission area based on the operation information. The HCU switches a reference position, at which the light emission spot is displayed, between a case where the driving assist function is in operation and a case where the driving assist function is not in operation.

Abstract: A variable nozzle is comprised of: an exhaust duct vectoring a flow of the exhaust gas to the aft end; a plurality of primary flaps arranged to define a primary flow path converging toward the aft end, each of the primary flaps being swingably pivoted on the exhaust duct to regulate a degree of opening the primary flow path and including a first section and a second section forming an angle axially outward relative to the first section; and a plurality of secondary flaps arranged to define a secondary flow path in communication with the primary flow path, the secondary flow path being capable of divergent toward the aft end, the secondary flaps being respectively swingably pivoted on the second sections of the primary flaps to regulate a degree of opening the secondary flow path.

Abstract: There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (1). The n-type single crystal silicon substrate (1) includes a central region (11) and an end-portion region (12). The central region (11) is a region which has the same central point as the central point of the n-type single crystal silicon substrate (1) and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (1). The central region (11) has a thickness t1. The end-portion region (12) is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (1). The end-portion region (12) is disposed on an outside of the central region (11) in an in-plane direction of the n-type single crystal silicon substrate (1), and has a thickness t2 which is thinner than the thickness t1.

Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film 3 placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Abstract: There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer (26n) formed on the first semiconductor layer, and a first metal layer (28n) formed on the first transparent conductive layer.

Abstract: A robot apparatus (1) includes a control apparatus (3) which carries out correction with use of an estimated value of a joint torque estimation unit (53) which estimates a joint torque acting upon each of joints (20 to 25). The joint torque estimation unit (53) includes a Coulomb frictional force torque estimation unit (70), a viscous frictional torque estimation unit (71), and a transition interval arithmetic operation unit (72) which smoothens transition from the Coulomb frictional force torque estimation unit (70) to the viscous frictional force estimation unit (71) and transition from the viscous frictional force torque estimation unit (71) to the Coulomb frictional force torque estimation unit (70).

Abstract: A variable nozzle is comprised of: an exhaust duct vectoring a flow of the exhaust gas to the aft end; a plurality of primary flaps arranged to define a primary flow path converging toward the aft end, each of the primary flaps being swingably pivoted on the exhaust duct to regulate a degree of opening the primary flow path and including a first section and a second section forming an angle axially outward relative to the first section; and a plurality of secondary flaps arranged to define a secondary flow path in communication with the primary flow path, the secondary flow path being capable of divergent toward the aft end, the secondary flaps being respectively swingably pivoted on the second sections of the primary flaps to regulate a degree of opening the secondary flow path.

Abstract: A robot apparatus (1) includes a control apparatus (3) which carries out correction with use of an estimated value of a joint torque estimation unit (53) which estimates a joint torque acting upon each of joints (20 to 25). The joint torque estimation unit (53) includes a Coulomb frictional force torque estimation unit (70), a viscous frictional torque estimation unit (71), and a transition interval arithmetic operation unit (72) which smoothens transition from the Coulomb frictional force torque estimation unit (70) to the viscous frictional force estimation unit (71) and transition from the viscous frictional force torque estimation unit (71) to the Coulomb frictional force torque estimation unit (70).