Patents by Inventor Yuta Murooka

Yuta Murooka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit and sensor system
    Patent number: 11946879
    Abstract: A thin film has a band gap of 2.2 eV or more and in which a crystal includes an atomic vacancy and an electron, a microwave irradiation system configured to irradiate the thin film with a microwave in response to driving from outside, an excitation unit configured to excite the electron included in the thin film in response to driving from outside, and a detector configured to detect, as an electric signal, at least either one of an intensity of light outputted from the thin film when the electron transitions from an excited state to a ground state and a change in conductivity of the thin film based on excitation.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: April 2, 2024
    Assignee: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Mutsuko Hatano, Takayuki Iwasaki, Nobuhiko Nishiyama, Yuta Masuyama, Takuya Murooka
  • Method for manufacturing magnetoresistive element
    Patent number: 9865805
    Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: January 9, 2018
    Assignee: CANON ANELVA CORPORATION
    Inventors: Takuya Seino, Kazumasa Nishimura, Hiroki Okuyama, Yuichi Otani, Yuta Murooka, Yoshimitsu Shimane
  • METHOD FOR MANUFACTURING MAGNETORESISTIVE ELEMENT
    Publication number: 20160005958
    Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.
    Type: Application
    Filed: June 17, 2015
    Publication date: January 7, 2016
    Inventors: Takuya Seino, Kazumasa Nishimura, Hiroki Okuyama, Yuichi Otani, Yuta Murooka, Yoshimitsu Shimane