Patents by Inventor Yuta Yokotsuji
Yuta Yokotsuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230253510Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 11664465Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: May 9, 2022Date of Patent: May 30, 2023Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20220271174Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: May 9, 2022Publication date: August 25, 2022Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 11355651Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: January 14, 2021Date of Patent: June 7, 2022Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20210135017Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: January 14, 2021Publication date: May 6, 2021Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 10964825Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: April 16, 2020Date of Patent: March 30, 2021Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Patent number: 10930798Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: April 16, 2020Date of Patent: February 23, 2021Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20200243691Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: April 16, 2020Publication date: July 30, 2020Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 10665728Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: November 13, 2019Date of Patent: May 26, 2020Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20200083388Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: November 13, 2019Publication date: March 12, 2020Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 10497816Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of SiC, a Schottky electrode formed to come into contact with at least a portion of a surface of the semiconductor layer, a field region surrounding the Schottky electrode, an annular trench formed on the field region and surrounding the Schottky electrode and a second conductivity type layer formed under a portion of the Schottky electrode outside at least the portion of the surface of the semiconductor layer.Type: GrantFiled: July 25, 2018Date of Patent: December 3, 2019Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20180351005Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: July 25, 2018Publication date: December 6, 2018Applicant: ROHM CO., LTD.Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 10056502Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: October 19, 2017Date of Patent: August 21, 2018Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20180062000Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: October 19, 2017Publication date: March 1, 2018Applicant: ROHM CO., LTD.Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 9818886Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: January 11, 2017Date of Patent: November 14, 2017Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20170125609Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: January 11, 2017Publication date: May 4, 2017Applicant: ROHM CO., LTD.Inventors: Masatoshi AKETA, Yuta YOKOTSUJI
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Patent number: 9577118Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: GrantFiled: July 10, 2015Date of Patent: February 21, 2017Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Patent number: 9548353Abstract: A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.Type: GrantFiled: July 7, 2015Date of Patent: January 17, 2017Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Patent number: 9478673Abstract: The semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor, a trench that is selectively formed on a surface portion of the semiconductor layer and that defines a unit cell having a predetermined shape on the surface portion, and a surface electrode that is embedded in the trench so as to cover an upper surface of the unit cell and that forms a Schottky junction between the unit cell and the surface electrode, and side surfaces of the trench are formed of only a plurality of planes that have plane orientations crystallographically equivalent to each other.Type: GrantFiled: December 2, 2013Date of Patent: October 25, 2016Assignee: ROHM CO., LTD.Inventors: Masatoshi Aketa, Yuta Yokotsuji
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Publication number: 20150372154Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.Type: ApplicationFiled: July 10, 2015Publication date: December 24, 2015Applicant: ROHM CO., LTD.Inventors: Masatoshi AKETA, Yuta YOKOTSUJI