Abstract: A thermal device according to the present disclosure includes a ceramic container, a fluid, and a sealing portion. The container includes an internal space, an opening portion connected to the internal space, and a communication path configured to connect the internal space and the opening portion. The fluid is located in the internal space. The sealing portion blocks the opening portion. The sealing portion includes a core portion and a flange connected to the core portion. The flange is bonded to the container around the opening portion. The core portion is located inside the opening portion. A portion of the core portion is in contact with the wall surface of the opening portion.

Abstract: A solid-state imaging apparatus includes a pixel circuit, a detection and selection circuit, and an AD conversion circuit. The pixel circuit outputs a plurality of pixel signals corresponding to mutually different gains or sensitivities. The detection and selection circuit compares one or more of the plurality of pixel signals with a reference value to generate a signal selection signal that instructs selection of a pixel signal among the plurality of pixel signals. The detection and selection circuit includes a sample and hold circuit that holds the plurality of pixel signals, and selects at least one pixel signal among the plurality of pixel signals held in the sample and hold circuit based on the signal selection signal. The detection and selection circuit is arranged in a stage before the AD conversion circuit that AD converts the at least one pixel signal selected.

Abstract: A solid-state imaging apparatus includes a pixel circuit that outputs a pixel signal and a negative feedback circuit. The negative feedback circuit includes a sample and hold circuit (hereinafter “SH circuit”) that samples and holds the pixel signal, and a feedback amplifier that negatively feeds back, to the SH circuit, a feedback signal according to a difference between the pixel signal from the pixel circuit and an output signal from the SH circuit.

Abstract: A friction stir welding tool member according to the present embodiment has a shoulder portion and a probe portion concentrically projecting from an upper surface of the shoulder portion. The shoulder portion includes a curved surface processed portion that is curved to have a curved shape on an outer peripheral edge of the shoulder portion. A space occupancy occupied by the two-dimensional space in which neither the shoulder portion nor the probe portion exists is in a range of 30% to 70%, the space occupancy being determined based on a projection drawing of a side surface region surrounded from a tip of the probe portion to the curved surface processed portion of the shoulder portion.

Abstract: Developed and provided are: an anticoccidial agent, and a using method thereof, where the anticoccidial agent has an excellent anticoccidial activity and can eliminate or minimize mass outbreak of coccidioses. Thus, provided are: an anticoccidial agent containing, as an active ingredient, a benzimidazole compound represented by General Formula (1), or a salt of the compound, and a method for using the agent. General Formula (1) is expressed as follows: wherein R1 typically represents haloalkyl; X typically represents oxygen; R typically represents alkyl; Y represents halogen; m denotes 0 or 1; Z represents alkyl or halogen; and n denotes 0, 1, or 2.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

Abstract: A solid-state imaging device includes: a plurality of pixel cells arranged in a matrix. In the solid-state imaging device, each of the plurality of pixel cells includes: a photoelectric converter that generates charge by photoelectric conversion, and holds a potential according to an amount of the charge generated; an initializer that initializes the potential of the photoelectric converter; a comparison section that compares the potential of the photoelectric converter and a predetermined reference signal, and causes the initializer to perform initialization when the potential of the photoelectric converter and the predetermined reference signal match; and a counter that counts a total number of times of initialization performed by the initializer, and outputs a signal corresponding to the total number of times as a first signal indicating an intensity of incident light.

Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.

Abstract: An imaging device is provided with an amplification transistor having a gate connected to a charge accumulator, a feedback transistor of which the source or drain is electrically connected to the charge accumulator and the other is connected to the source or drain of the amplification transistor, a current supply that supplies a current to a first node, a first select transistor of which the source or drain is connected to the other of the amplification transistor, a second select transistor of which the source or drain is connected to the source or drain of the amplification transistor, a current source/voltage source switching circuit that selectively connects a current source or a first voltage supply circuit to the other of the first select transistor, and a second voltage supply circuit connected to the other of the second select transistor.

Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.

Abstract: A solid-state imaging apparatus includes a pixel circuit and a negative feedback circuit. The pixel circuit includes: a photodiode; a charge storage that holds a signal charge generated by the photodiode; an amplification transistor that outputs a pixel signal corresponding to the signal charge in the charge storage; a first reset transistor that resets the charge storage; a first storage capacitive element for holding a signal charge; and a first transistor that controls the connection between the charge storage and the first storage capacitive element. The negative feedback circuit negatively feeds back a feedback signal corresponding to a reset output of the amplification transistor to the charge storage via the first reset transistor.

Abstract: A solid-state imaging device includes: a plurality of pixel cells arranged in a matrix. In the solid-state imaging device, each of the plurality of pixel cells includes: a photoelectric converter that generates charge by photoelectric conversion, and holds a potential according to an amount of the charge generated; an initializer that initializes the potential of the photoelectric converter; a comparison section that compares the potential of the photoelectric converter and a predetermined reference signal, and causes the initializer to perform initialization when the potential of the photoelectric converter and the predetermined reference signal match; and a counter that counts a total number of times of initialization performed by the initializer, and outputs a signal corresponding to the total number of times as a first signal indicating an intensity of incident light.

Abstract: An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.

Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.

Abstract: An imaging device is provided with an amplification transistor having a gate connected to a charge accumulator, a feedback transistor of which the source or drain is electrically connected to the charge accumulator and the other is connected to the source or drain of the amplification transistor, a current supply that supplies a current to a first node, a first select transistor of which the source or drain is connected to the other of the amplification transistor, a second select transistor of which the source or drain is connected to the source or drain of the amplification transistor, a current source/voltage source switching circuit that selectively connects a current source or a first voltage supply circuit to the other of the first select transistor, and a second voltage supply circuit connected to the other of the second select transistor.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate.

Abstract: An amide compound represented by the general formula [I]: or a salt thereof, an agricultural and horticultural microbicide comprising the compound or the salt as an active ingredient, and a method for using the agricultural and horticultural microbicide.

Abstract: The present invention has an object to develop and provide a novel agricultural and horticultural insecticidal and acaricidal agent due to the factors such as serious damages caused by pests and the like and growing resistant pests against existing drugs in the crop production such as agriculture and horticulture. The present invention provides an agricultural and horticultural insecticidal and acaricidal agent having as an active ingredient a benzimidazole compound represented by general formula (1) wherein R represents an alkyl group or the like, R1 represents a haloalkyl group or the like, X represents an oxygen atom or the like, m and n represent 0 or the like, or a salt thereof, and a method for using the same.

Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.

Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.