Patents by Inventor Yutaka Hirai
Yutaka Hirai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 5321685Abstract: A cantilever type probe comprising a piezoelectric bimorph cantilever containing a piezoelectric material provided between driving electrodes for driving a cantilever, a probe formed thereon and a drawing electrode for a probe provided along the surface where a probe is formed, wherein there is provided a shielding electrode for electrically isolating the probe and the drawing electrode from the driving electrodes.Type: GrantFiled: November 20, 1992Date of Patent: June 14, 1994Assignee: Canon Kabushiki KaishaInventors: Hiroyasu Nose, Kunihiro Sakai, Toshimitsu Kawase, Toshihiko Miyazaki, Katsuhiko Shinjo, Yutaka Hirai, Takayuki Yagi, Katsunori Hatanaka, Keisuke Yamamoto, Yuki Kasanuki, Yoshio Suzuki
-
Patent number: 5317152Abstract: A cantilever type probe comprises a cantilever-shaped displacement element and a tip which displacement element has a first electrode layer, a first piezoelectric material film and a second piezoelectric material film which films are laminated on opposite sides of the first electrode layer, and a second electrode layer and a third electrode layer which layer are laminated on outer surfaces of the piezoelectric material films, and which tip is connected with a leader electrode located at a free end of the surface of the displacement element; wherein in the width direction of the cantilever both ends of the first electrode layer protrude outward more than each end of the second and third electrode layers. A scanning tunneling microscope comprises the cantilever type probe, a driving means for displacing the probe, a stage for specimen so as to approach and locate the specimen to the tip, and a potential applying means for applying a bias voltage between the tip and the specimen.Type: GrantFiled: April 21, 1992Date of Patent: May 31, 1994Assignee: Canon Kabushiki KaishaInventors: Osamu Takamatsu, Yutaka Hirai, Masaru Nakayama, Takayuki Yagi, Yuji Kasanuki, Yasuhiro Shimada
-
Patent number: 5285097Abstract: A semiconductor sensor has a semiconductor substrate including both of a conductive or semiconductor surface and an insulative surface and a pair of conductive members provided on said conductive or semiconductor surface of the substrate. There is constructed a sensor section in which at least one of the pair of conductive members can be deformed and an electrostatic capacitance between the pair of conductive members is variable. The semiconductor substrate has a functional element which is electrically connected to the sensor section.Type: GrantFiled: February 21, 1992Date of Patent: February 8, 1994Assignee: Canon Kabushiki KaishaInventor: Yutaka Hirai
-
Patent number: 5273919Abstract: A method of producing a thin film field effect transistor. An insulating thin film layer is formed on a gate electrode subsequent to the gate electrode being formed on a substrate. A multilayer structure is formed on the insulating thin film layer subsequent to the insulating thin film layer being formed on the gate electrode by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline material layers.Type: GrantFiled: April 16, 1992Date of Patent: December 28, 1993Assignee: Canon Kabushiki KaishaInventors: Masafumi Sano, Katsuji Takasu, Hisanori Tsuda, Yutaka Hirai
-
Patent number: 5268571Abstract: A micro-displacement element comprises a unimorph cantilever having a piezoelectric thin film, a pair of electrodes between which the piezoelectric thin film is sandwiched, and an elastic thin film. One end of the cantilever is supported by a support, and the other end thereof is provided with a probe. The micro-displacement element can be used particularly as an array of plural elements, for an information processing apparatus in which the element faces to a recording medium such that an information recording pulse voltage or an information reproducing bias voltage can be applied to between the probe and the recording medium.Type: GrantFiled: May 27, 1992Date of Patent: December 7, 1993Assignee: Canon Kabushiki KaishaInventors: Keisuke Yamamoto, Yutaka Hirai, Masaru Nakayama, Takayuki Yagi, Yuji Kasanuki, Yoshio Suzuki
-
Patent number: 5261961Abstract: A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.Type: GrantFiled: July 8, 1992Date of Patent: November 16, 1993Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Hisanori Tsuda, Masafumi Sano, Yutaka Hirai
-
Patent number: 5135607Abstract: A process for forming a crystalline deposited film on a substrate surface by preparing the substrate surface on which spaced crystal nuclei are present for forming the crystalline deposited film, forming the crystalline deposited film by introducing an activated species (A) formed decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation which is chemically mutually reactive with the activated species (A) whereby a mixture is formed between the two activated species to cause a chemical reaction therebetween and thereby affect the formation of the crystalline deposited film. An etching action is thereafter produced on the crystalline deposited film by exposing the film to a gaseous substance (B) capable of effecting an etching action to effect crystal growth in specific face direction.Type: GrantFiled: March 11, 1991Date of Patent: August 4, 1992Assignee: Canon Kabushiki KaishaInventor: Yutaka Hirai
-
Patent number: 4987460Abstract: A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3.ev.sup.-1 or less.Type: GrantFiled: September 13, 1989Date of Patent: January 22, 1991Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Masafumi Sano, Hisanori Tsuda, Yutaka Hirai
-
Patent number: 4982251Abstract: A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.Type: GrantFiled: April 17, 1990Date of Patent: January 1, 1991Assignee: Canon Kabushiki KaishaInventors: Katsumi Nakagawa, Toshiyuki Komatsu, Yutaka Hirai, Yoshiyuki Osada, Satoshi Omata, Takashi Nakagiri
-
Patent number: 4933221Abstract: An optical recording device and an information memorizing device utilizing the same are provided. The optical recording device comprises an A-layer comprising a chromogenic compound which is usually colorless or pale colored, a B-layer comprising an auxochromic compound capable of making said chromogenic compound form color through contact with said chromogenic compound, and a light-absorbing layer, at least one of the three layers being constituted of a monomolecular film or a built-up film thereof.Type: GrantFiled: August 17, 1988Date of Patent: June 12, 1990Assignee: Canon Kabushiki KaishaInventors: Yukuo Nishimura, Haruki Kawada, Masahiro Haruta, Yutaka Hirai, Noritaka Mochizuki, Takashi Nakagiri
-
Patent number: 4921722Abstract: A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.Type: GrantFiled: October 11, 1985Date of Patent: May 1, 1990Assignee: Canon Kabushiki KaishaInventors: Yoshiyuki Osada, Hisanori Tsuda, Masafumi Sano, Satoshi Omata, Katsuji Takasu, Yutaka Hirai
-
Patent number: 4920387Abstract: A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 10.sup.16 cm.sup.-3.eV.sup.-1 or less.Type: GrantFiled: September 13, 1989Date of Patent: April 24, 1990Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Masafumi Sano, Hisanori Tsuda, Yutaka Hirai
-
Patent number: 4916510Abstract: A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline insulating material layers. The thickness of the semiconductor layers is 5 to 500 .ANG..Type: GrantFiled: March 11, 1988Date of Patent: April 10, 1990Assignee: Canon Kabushiki KaishaInventors: Masafumi Sano, Katsuji Takasu, Hisanori Tsuda, Yutaka Hirai
-
Patent number: 4914490Abstract: A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3 .multidot.eV.sup.-1 or less.Type: GrantFiled: January 30, 1989Date of Patent: April 3, 1990Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Masafumi Sano, Hisanori Tsuda, Yutaka Hirai
-
Patent number: 4905072Abstract: A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).Type: GrantFiled: April 29, 1988Date of Patent: February 27, 1990Assignee: Canon Kabushiki KaishaInventors: Toshiyuki Komatsu, Yutaka Hirai, Katsumi Nakagawa, Yoshiyuki Osada, Satoshi Omata, Takashi Nakagiri
-
Patent number: 4893154Abstract: An electroluminescent device, which emits light by recombination of the carriers injected or excited by light of energy of electrical field, comprising an active layer which includes a semiconductor layer of a super-lattice structure. The layer in the super-lattice structure is changed in effective band gap by an electrical field externally applied to vary the emitted light wavelength. The semiconductor layer of said super-lattice structure comprising an non-single crystalline semiconductor material.Type: GrantFiled: February 8, 1989Date of Patent: January 9, 1990Assignee: Canon Kabushiki KaishaInventors: Yutaka Hirai, Masafumi Sano, Hisanori Tsuda, Katsuji Takasu
-
Patent number: 4877650Abstract: A method for forming a deposited film comprises effecting a step (a) and a step (b) at least one time, the step (a) being introduction of a starting material (A) which is either one of a gaseous starting material for formation of a deposited film or a gaseous halogenic oxidizing agent having the property of oxidative action on said gaseous starting material into a film forming space in which a substrate for film formation is arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step (b) being the introduction of a starting material (B) which is the other of said gaseous starting material and said gaseous halogenic oxidizing agent into said film forming space, thereby causing surface reaction on said adsorbed layer (I) to occur to form a deposited film (i).Type: GrantFiled: March 30, 1987Date of Patent: October 31, 1989Assignee: Canon Kabushiki KaishaInventors: Jinsho Matsuyama, Yutaka Hirai, Masao Ueki, Akira Sakai
-
Patent number: 4873125Abstract: A method for forming deposited film, which comprises effecting a step [A] and another step [B] at least one time, the step [A] being the introduction of a starting material (A) which is either one of a gaseous starting material (I) for formation of a deposited film and a gaseous halogenic oxidizing agent (II) having the property of oxidative action on said starting material into a film forming space in which a substrate of which at least the surface to be filmed thereon has crystal orientability is previously arranged to have said starting material adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step [B] being the introduction of the other starting material (B) into said film forming space, thereby causing the surface reaction on said adsorption layer (I) to occur and form a deposited film.Type: GrantFiled: March 26, 1987Date of Patent: October 10, 1989Assignee: Canon Kabushiki KaishaInventors: Jinsho Matsuyama, Yutaka Hirai, Masao Ueki, Akira Sakai
-
Patent number: 4830946Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.Type: GrantFiled: May 16, 1988Date of Patent: May 16, 1989Assignee: Canon Kabushiki KaishaInventors: Toshiyuki Komatsu, Yutaka Hirai, Katsumi Nakagawa, Tadaji Fukuda
-
Patent number: 4818656Abstract: An electrophotographic image forming member comprises a substrate and a photoconductive layer overlying the substrate and composed of a hydrogenated amorphous silicon containing 0.001-1000 atomic ppm of carbon as an impurity based on silicon.Type: GrantFiled: May 24, 1988Date of Patent: April 4, 1989Assignee: Canon Kabushiki KaishaInventors: Tadaji Fukuda, Yutaka Hirai, Katsumi Nakagawa, Toshiyuki Komatsu