Abstract: There are disclosed an X-ray tube and an X-ray analysis apparatus which are made smaller and lighter in weight than heretofore and which detect fluorescent X-rays more efficiently with enhanced sensitivity. The X-ray tube has a vacuum enclosure, an electron beam source mounted in the enclosure and emitting an electron beam, a target irradiated with the beam and producing primary X-rays, an X-ray detector device, and a metallic thermal and electrical conductor portion mounted over a part of the window and extending from the target to the enclosure. The enclosure has a vacuum inside and a window made of an X-ray transmissive film through which X-rays are transmitted. The target is smaller in outside diameter than the window and mounted over the central portion of the window such that the primary X-rays can be ejected at an external sample through the window.

Abstract: To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.

Abstract: A sample sealing vessel 8 includes a plurality of wall faces comprising a material for transmitting X-ray, an X-ray source 1 is arranged at a wall face 11 to irradiate primary X-ray, a face 12 different from the face irradiated with the primary X-ray is arranged to be opposed to an X-ray detector 10, and the primary X-ray from the X-ray source 1 is arranged to be able to irradiate the wall face 12 of the sample sealing vessel to which the X-ray detector 10 is opposed.

Abstract: In a sample height regulating method, an area including the observation point on the sample is scan-irradiated with a first charged particle beam to obtain a first secondary electron image including the observation point. An area including the observation point on the sample is then scan-irradiated with a second charged particle beam to obtain a second secondary electron image including the observation point. Thereafter, based on magnifications of the first secondary electron image and the second secondary electron image and a distance between the observation point in the first secondary electron image and the observation point in the second secondary electron image, a height of the sample required for focusing the first charged particle beam and the second charged particle beam on the observation point is calculated. A sample stage supporting the sample is then displaced so as to position the sample at the calculated sample height.

Abstract: In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

Abstract: Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.

Abstract: A sample sealing vessel 8 includes a plurality of wall faces comprising a material for transmitting X-ray, an X-ray source 1 is arranged at a wall face 11 to irradiate primary X-ray, a face 12 different from the face irradiated with the primary X-ray is arranged to be opposed to an X-ray detector 10, and the primary X-ray from the X-ray source 1 is arranged to be able to irradiate the wall face 12 of the sample sealing vessel to which the X-ray detector 10 is opposed.

Abstract: To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.

Abstract: Calculation means calculates a sample height for focusing an ion beam and an electron beam onto a same observation point, based on magnifications of a secondary electron image obtained by an irradiation with the ion beam and a secondary electron image obtained by an irradiation with the electron beam, and a distance between an observation point in the secondary electron image obtained by the irradiation with the ion beam and the observation point in the secondary electron image obtained by the irradiation with the electron beam.

Abstract: By indicating a desired position in any one image plane of a 1st image plane and a 2nd image plane and specifying a corresponding position in the other image plane by using a conversion function for mutually converting an coordinate system of the 1st image plane and that of the 2nd image plane, it is possible to specify a position, in the other image plane, corresponding to the desired position indicated in the any one image plane.

Abstract: A method of measuring a pattern by using a display microscope image comprises a step of setting an edge detection reference line by designating a range of detecting an edge and a number of edge points with regard to a respective side portion of the pattern in the microscope image, a step of sampling the edge point constituting a point of changing a brightness from image information by searching the edge point from a direction orthogonal to the set edge detection reference line, a step of providing a line approximating the respective side portion of the pattern based on position information of a plurality of the edge points and a step of specifying a shape of the pattern by an intersecting point of two pieces of lines, a specified point provided by a plurality of intersecting points, an angle made by two pieces of straight lines and a distance between two specified points from information of the approximated line approximating the respective side portion of the pattern.

Abstract: A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.

Abstract: Automatic pattern matching and shape measurement are enabled by adjusting a brightness level of a microscope image based on information of a local region of the image so that a magnified image of the local region takes on an appropriate brightness and is not affected by brighter peripheral portions of the image, thereby enabling feature extraction of a desired pattern. By using the inventive method in an energized beam apparatus having a sample stage capable of linear and tilting movement, a series of operations including cross section forming, sample tilting, cross section observation, and pattern recognition, may be performed on an automated basis.

Abstract: A method for correcting drifts in beam irradiation position in a focused ion beam apparatus is disclosed. A linear line pattern is formed on a sample by linearly irradiating a focused ion beam at a location removed from a processing region where a cross section is to be formed in the sample. The linear line pattern extends in a direction in parallel with a surface of the cross section to be formed. By referring to the linear line pattern while a specified section of the sample is processed, the beam irradiation position of the focused ion beam with respect to the linear line pattern is measured in a direction perpendicular to the linear line pattern to detect a drift in the beam irradiation position of the focused ion beam in the direction perpendicular to the linear line pattern. The beam irradiation position of the focused ion beam is corrected based on the drift detected with respect to the processing region.

Abstract: A thin specimen producing method of the invention is to acquire a work amount in a 1-line scan by an FIB under a predetermined condition, also to measure a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, to determine a required number of scan lines of work to reach a predetermined width by calculation, and to execute a work to obtain a set thickness. The work amount in a one-line scan by a FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and to calculate an average working amount per one-line scan.

Abstract: A method for correcting drifts in beam irradiation position in a focused ion beam apparatus is disclosed. A linear line pattern is formed on a sample by linearly irradiating a focused ion beam at a location removed from a processing region where a cross section is to be formed in the sample. The linear line pattern extends in a direction in parallel with a surface of the cross section to be formed. By referring to the linear line pattern while a specified section of the sample is processed, the beam irradiation position of the focused ion beam with respect to the linear line pattern is measured in a direction perpendicular to the linear line pattern to detect a drift in the beam irradiation position of the focused ion beam in the direction perpendicular to the linear line pattern. The beam irradiation position of the focused ion beam is corrected based on the drift detected with respect to the processing region.

Abstract: The present invention provides a focused ion beam device that can automatically carry out pattern matching and shape measurement by adjusting brightness levels of microscope images on a display so that an observation region, becomes an appropriate brightness without being affected by brightness of peripheral images within the field of view, so as to be able to effectively carry out feature extraction of a noted pattern. Also, a system for supporting operations is constructed that does not require a series of operations to be executed in the presence of an operator each time in the event that fixed shape measurement is carried out.

Abstract: A method of measuring a pattern by using a display microscope image comprises a step of setting an edge detection reference line by designating a range of detecting an edge and a number of edge points with regard to a respective side portion of the pattern in the microscope image, a step of sampling the edge point constituting a point of changing a brightness from image information by searching the edge point from a direction orthogonal to the set edge detection reference line, a step of providing a line approximating the respective side portion of the pattern based on position information of a plurality of the edge points and a step of specifying a shape of the pattern by an intersecting point of two pieces of lines, a specified point provided by a plurality of intersecting points, an angle made by two pieces of straight lines and a distance between two specified points from information of the approximated line approximating the respective side portion of the pattern.

Abstract: To process sample of specific portion or position for the transmission electron microscope [TEM] simply to the most suitable or optimal shape, and to confirm the sample thickness of the sample while processing above (on-going confirmation). To make TEM sample through etching by way of irradiation of ion beam 2 onto sample 4, and to confirm processing status of sample by way of irradiating electron beam 7 from horizontal angle to cross-section of sample, and of detecting secondary electron, reflection electron, X ray, and transmission electron with respective detector 5, 9, 10, and 11, and to estimate the thickness of sample in process above since the intensities of these signals above changes due to the thin film thickness of sample.