Abstract: A method for manufacturing a semiconductor element of the present disclosure includes: a step of preparing a substrate; a first element forming step of forming a first semiconductor layer in a first region on a surface of the substrate; a first element separating step of separating the first semiconductor layer from the substrate; and a second element forming step of forming a second semiconductor layer in a second region on the surface of the substrate from which the first semiconductor layer is separated. Additionally, in the method for manufacturing a semiconductor element of the present disclosure, at least a portion of the second region overlaps the first region.

Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Abstract: A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step.

Abstract: The method of the disclosure for producing a crystal is a method for producing a crystal of silicon carbide and includes a preparation step, a contact step, a first growth step, a heating step, a cooling step, and a second growth step. The preparation step includes preparing a seed crystal, a crucible, and a solution. The contact step includes bringing the seed crystal into contact with the solution. The first growth step includes heating the solution to a temperature in a first temperature range and pulling up the seed crystal with the temperature of the solution kept in the first temperature range to grow a crystal from the lower surface of the seed crystal. The heating step includes heating the solution. The cooling step includes cooling the solution. The second growth step includes further growing the crystal with the temperature of the solution kept in the first temperature range.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Abstract: A crucible 1 according to an embodiment of the present invention is a crucible 1 which is used in a solution growth method for growing a crystal of silicon carbide on a lower surface 3B of a seed crystal 3 from a solution 2, by accommodating the solution 2 of silicon containing carbon in the crucible 1, by allowing the lower surface 3B of the seed crystal 3 to contact with the solution 2 from above, and by pulling the seed crystal 3 upward. The crucible is made of carbon and includes a solution adjustment member 4 which is fixed to an inner wall surface 1A so as to be positioned between a bottom surface 1B and a liquid surface of the solution 2 when the crucible 1 is used and which includes a through hole 4a overlapped with an inner side of the seed crystal 3 disposed above.

Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

Abstract: Disclosed is an image display wherein luminance change due to change of the light-emitting device over time is compensated while suppressing affects of characteristics change in the drive transistor. Specifically disclosed is an image display comprising a plurality of pixels, wherein each pixel has a light-emitting device (OLED) which emits light when current is passed therethrough, a driver device (Td) for controlling light emission of the light-emitting device, and a control circuit (A) which is electrically connected to the light-emitting device and the driver device, and directly or indirectly detects the voltage applied to the light-emitting device at least during when the light-emitting device is emitting light and reflects the detection results to the driver device.

Abstract: An electroluminescent device includes a first optical output part having a light-emitting layer emitting a light ray of a first color, a second optical output part having a light-emitting layer emitting a light ray of a second color, and a third optical output part having a light-emitting layer emitting a light ray of a third color, the colors being different from one another. Each of the optical output parts also has a resonator structure that resonates the light ray emitted from the light-emitting layer. In each optical output part, a resonant peak wavelength indicating a peak value of a transmission spectrum of light transmitted through the resonator structure in a direction perpendicular to a main surface of the light-emitting layer is on a longer or shorter wavelength side of an emission peak wavelength indicating a peak value of an emission spectrum of the light ray emitted by the light-emitting layer.

Abstract: Disclosed is an image display wherein luminance change due to change of the light-emitting device over time is compensated while suppressing affects of characteristics change in the drive transistor. Specifically disclosed is an image display comprising a plurality of pixels, wherein each pixel has a light-emitting device (OLED) which emits light when current is passed therethrough, a driver device (Td) for controlling light emission of the light-emitting device, and a control circuit (A) which is electrically connected to the light-emitting device and the driver device, and directly or indirectly detects the voltage applied to the light-emitting device at least during when the light-emitting device is emitting light and reflects the detection results to the driver device.

Abstract: An electroluminescent device includes a first optical output part having a light-emitting layer emitting a light ray of a first color, a second optical output part having a light-emitting layer emitting a light ray of a second color, and a third optical output part having a light-emitting layer emitting a light ray of a third color, the colors being different from one another. Each of the optical output parts also has a resonator structure that resonates the light ray emitted from the light-emitting layer. In each optical output part, a resonant peak wavelength indicating a peak value of a transmission spectrum of light transmitted through the resonator structure in a direction perpendicular to a main surface of the light-emitting layer is on a longer or shorter wavelength side of an emission peak wavelength indicating a peak value of an emission spectrum of the light ray emitted by the light-emitting layer.

Abstract: An optical module includes a flat substrate, an electric connection terminal provided on the substrate, an optical element provided on the substrate, the optical element being connected with the electric connection terminal, and one end of a slender light transmitted fixed on the substrate and optically coupled with the optical element. The electric connection terminal is connectable with an external connector. The connector (or socket) is first mounted on an electric circuit board by reflow soldering or the like, and then the optical module having the slender light transmitter (or optical fiber) is electrically connected with the connector.

Abstract: An optical coupler wherein on one principal face of an Si single crystal substrate are formed, by etching, grooves for mounting optical fibers and a portion for mounting an optical element that is divided into plural parts, a base substrate, of which coefficient of thermal expansion is substantially identical to that of the optical element, is bonded onto the other principal face of the substrate, and the optical element is mounted on the portion for mounting an optical element.