Patents by Inventor Yutaka Matsuo

Yutaka Matsuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145239
    Abstract: A manufacturing method of a semiconductor element includes forming a plurality of islands, each including a semiconductor layer containing a nitride semiconductor and a support formed on the semiconductor layer, on a sapphire substrate, joining the support to a retention substrate via an adhesive member, peeling off the semiconductor layer from the sapphire substrate by irradiating the semiconductor layer with laser light, and polishing a surface of the semiconductor layers peeled off from the sapphire substrate.
    Type: Application
    Filed: August 9, 2023
    Publication date: May 2, 2024
    Applicant: Oki Electric Industry Co., Ltd.
    Inventors: Shinya JUMONJI, Toru KOSAKA, Takahito SUZUKI, Kenichi TANIGAWA, Yusuke NAKAI, Hiroto KAWADA, Genichirou MATSUO, Yutaka KITAJIMA
  • Publication number: 20240145631
    Abstract: A manufacturing method of a semiconductor element includes forming a plurality of semiconductor layers on a sapphire substrate, each of the semiconductor layers having a first surface on the sapphire substrate side and a second surface on the opposite side, joining the second surfaces of the plurality of semiconductor layers to a retention member via an adhesive member, peeling off the plurality of semiconductor layers from the sapphire substrate by irradiating the first surfaces of the plurality of semiconductor layers with laser light, and polishing the first surfaces of the plurality of semiconductor layers. At least one semiconductor layer among the plurality of semiconductor layers includes a polishing indication part extending from the second surface toward the first surface. The polishing is executed until the polishing indication part is exposed to the polished surface.
    Type: Application
    Filed: August 8, 2023
    Publication date: May 2, 2024
    Applicant: Oki Electric Industry Co., Ltd.
    Inventors: Shinya JUMONJI, Toru KOSAKA, Takahito SUZUKI, Kenichi TANIGAWA, Yusuke NAKAI, Hiroto KAWADA, Genichirou MATSUO, Yutaka KITAJIMA
  • Publication number: 20240133834
    Abstract: Disclosed herein is a gas sensor that includes a sensor part configured to generate a gas detection signal in accordance with a concentration of a gas to be measured, and a control circuit configured to generate an output signal indicating the concentration of the gas to be measured based on the gas detection signal. The control circuit is configured to correct the output signal so that the output signal indicates a concentration of the gas to be measured higher than that indicated by the gas detection signal when a level of the gas detection signal output from the sensor part is less than a reference value corresponding to a level of the gas detection signal which is normally obtained when a concentration of the gas to be measured is a concentration value in normal time.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 25, 2024
    Inventors: Yoshio KAITA, Yasuhiro INUI, Yutaka MATSUO
  • Patent number: 11854751
    Abstract: The present invention provides a light-transmitting electrode which has high electrical conductivity and high electron blocking performance. The present invention also provides a solar cell which is capable of achieving high energy conversion efficiency at low cost. The present invention provides a method for producing a light-transmitting electrode that has a light-transmitting substrate, a carbon nanotube film which is formed directly or indirectly on the light-transmitting substrate, and a metal oxide film which is formed directly on the carbon nanotube film. This production method includes vapor depositing the metal oxide film, which contains oxygen and a metal element belonging to the group 4, 5 or 6 of the periodic table, on one surface or both surfaces of the carbon nanotube film. The present invention provides a light-transmitting electrode which includes a light-transmitting substrate and a conductive carbon nanotube film that is formed directly or indirectly on the light-transmitting substrate.
    Type: Grant
    Filed: January 15, 2021
    Date of Patent: December 26, 2023
    Assignees: The University of Tokyo, Aalto University, Denso Corporation
    Inventors: Shigeo Maruyama, Yutaka Matsuo, Il Jeon, Kehang Cui, Esko I. Kauppinen, Albert G. Nasibulin
  • Publication number: 20230099136
    Abstract: A fullerene derivative has a structure of formula (1) or formula (2): wherein Ar is a substituted or unsubstituted aromatic ring, * is a carbon atom at the point of attachment to a fullerene core, X is O, S, Se, or Te, and R is an organic group.
    Type: Application
    Filed: January 22, 2021
    Publication date: March 30, 2023
    Inventor: Yutaka MATSUO
  • Patent number: 11567025
    Abstract: A gas sensor includes a first thermistor as a detection element, a second thermistor as a reference element, a first heater for heating the first thermistor, a second heater for heating the second thermistor, and a control circuit that heats the first and second heaters such that the second thermistor has a higher temperature than the first thermistor in a first period of time and that the first thermistor has a higher temperature than the second thermistor in a second period of time.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: January 31, 2023
    Assignee: TDK CORPORATION
    Inventors: Yutaka Matsuo, Yoshio Kaita
  • Publication number: 20220407009
    Abstract: To provide an n-type dopant capable of providing high charge mobility and controlling the Fermi level. To provide an organic semiconductor layer having high charge mobility, no crystal distortion, no dopant diffusion even at high temperatures, and having a controlled Fermi level. To provide an organic semiconductor devices such as an organic semiconductor solar cells with high power conversion efficiency. An n-type organic semiconductor layer, in which ionic atom encapsulated fullerene neutral substance is doped in a layer made of fullerene. The n-type semiconductor layer is an electron transport layer. N-type dopant including ionic atom encapsulated fullerene neutral substance doped in an organic semiconductor layer.
    Type: Application
    Filed: September 3, 2020
    Publication date: December 22, 2022
    Inventors: Yutaka MATSUO, Hiroshi UENO, Il JEON, Hiroshi OKADA
  • Patent number: 11499932
    Abstract: A gas sensor includes: a first thermistor having a resistance value that changes according to a concentration of a first gas with a first sensitivity and changes according to a concentration of a second gas with a second sensitivity; a second thermistor connected in series to the first thermistor, the second thermistor having a resistance value that changes according to a concentration of the first gas with a third sensitivity that is lower than the first sensitivity and changes according to a concentration of the second gas with a fourth sensitivity that is different from the second sensitivity; and a correction resistor connected in parallel with the first or second thermistor.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: November 15, 2022
    Assignee: TDK CORPORATION
    Inventors: Yoshio Kaita, Yutaka Matsuo
  • Patent number: 11322688
    Abstract: Disclosed are an N-type semiconductor composition including fullerene or a fullerene derivative; and fullerene subunit derivative represented by Chemical Formula 1, and a thin film, an organic photoelectric device, an image sensor and an electronic device including the same. In Chemical Formula 1, X, Cy and R1 to R8 are the same as defined in the detailed description.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: May 3, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hiromasa Shibuya, Chul Baik, Yutaka Matsuo, Sung Young Yun, Seon-Jeong Lim, Ji Soo Shin, Gae Hwang Lee, Yeong Suk Choi, Taejin Choi, Hye Rim Hong
  • Patent number: 11271162
    Abstract: Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same. In Chemical Formula 1, X, Ar, R1 to R3, a, b, and c are the same as defined in the detailed description.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: March 8, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hiromasa Shibuya, Yeong Suk Choi, Yutaka Matsuo
  • Publication number: 20210293735
    Abstract: A gas sensor includes a first thermistor as a detection element, a second thermistor as a reference element, a first heater for heating the first thermistor, a second heater for heating the second thermistor, and a control circuit that heats the first and second heaters such that the second thermistor has a higher temperature than the first thermistor in a first period of time and that the first thermistor has a higher temperature than the second thermistor in a second period of time.
    Type: Application
    Filed: June 20, 2019
    Publication date: September 23, 2021
    Inventors: Yutaka MATSUO, Yoshio KAITA
  • Patent number: 11094885
    Abstract: Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the fullerene derivative. In Chemical Formula 1, X, Ar, and R1 to R3 are the same as defined in the detailed description.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: August 17, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hiromasa Shibuya, Norihito Ishii, Yeong Suk Choi, Yutaka Matsuo
  • Publication number: 20210193397
    Abstract: The present invention provides a light-transmitting electrode which has high electrical conductivity and high electron blocking performance. The present invention also provides a solar cell which is capable of achieving high energy conversion efficiency at low cost. The present invention provides a method for producing a light-transmitting electrode that has a light-transmitting substrate, a carbon nanotube film which is formed directly or indirectly on the light-transmitting substrate, and a metal oxide film which is formed directly on the carbon nanotube film. This production method includes vapor depositing the metal oxide film, which contains oxygen and a metal element belonging to the group 4, 5 or 6 of the periodic table, on one surface or both surfaces of the carbon nanotube film. The present invention provides a light-transmitting electrode which includes a light-transmitting substrate and a conductive carbon nanotube film that is formed directly or indirectly on the light-transmitting substrate.
    Type: Application
    Filed: January 15, 2021
    Publication date: June 24, 2021
    Inventors: Shigeo Maruyama, Yutaka Matsuo, Il Jeon, Kehang Cui, Esko I. Kauppinen, Albert G. Nasibulin
  • Patent number: 10930442
    Abstract: The present invention provides a light-transmitting electrode which has high electrical conductivity and high electron blocking performance. The present invention also provides a solar cell which is capable of achieving high energy conversion efficiency at low cost. The present invention provides a method for producing a light-transmitting electrode that has a light-transmitting substrate, a carbon nanotube film which is formed directly or indirectly on the light-transmitting substrate, and a metal oxide film which is formed directly on the carbon nanotube film. This production method includes vapor depositing the metal oxide film, which contains oxygen and a metal element belonging to the group 4, 5 or 6 of the periodic table, on one surface or both surfaces of the carbon nanotube film. The present invention provides a light-transmitting electrode which includes a light-transmitting substrate and a conductive carbon nanotube film that is formed directly or indirectly on the light-transmitting substrate.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: February 23, 2021
    Assignees: University of Tokyo, Aalto University, Denso Corporation
    Inventors: Shigeo Maruyama, Yutaka Matsuo, Il Jeon, Kehang Cui, Esko I Kauppinen, Albert G Nasibulin
  • Publication number: 20210003525
    Abstract: A gas sensor includes: a first thermistor having a resistance value that changes according to a concentration of a first gas with a first sensitivity and changes according to a concentration of a second gas with a second sensitivity; a second thermistor connected in series to the first thermistor, the second thermistor having a resistance value that changes according to a concentration of the first gas with a third sensitivity that is lower than the first sensitivity and changes according to a concentration of the second gas with a fourth sensitivity that is different from the second sensitivity; and a correction resistor connected in parallel with the first or second thermistor.
    Type: Application
    Filed: September 5, 2018
    Publication date: January 7, 2021
    Inventors: Yoshio KAITA, Yutaka MATSUO
  • Publication number: 20200365807
    Abstract: Disclosed are an N-type semiconductor composition including fullerene or a fullerene derivative; and fullerene subunit derivative represented by Chemical Formula 1, and a thin film, an organic photoelectric device, an image sensor and an electronic device including the same. In Chemical Formula 1, X, Cy and R1 to R8 are the same as defined in the detailed description.
    Type: Application
    Filed: May 15, 2020
    Publication date: November 19, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hiromasa SHIBUYA, Chul BAIK, Yutaka MATSUO, Sung Young YUN, Seon-Jeong LIM, Ji Soo SHIN, Gae Hwang LEE, Yeong Suk CHOI, Taejin CHOI, Hye Rim HONG
  • Patent number: 10840384
    Abstract: An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide having a recessed part 23 on the second surface 22, an epitaxial layer 30 made of gallium oxide and provided on a first surface 21 of the semiconductor substrate 20; an anode electrode 40 provided at a position overlapping the recessed part 23 as viewed in the lamination direction and brought into Schottky contact with the epitaxial layer 30, and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20 and brought into ohmic contact with the semiconductor substrate 20.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: November 17, 2020
    Assignee: TDK CORPORATION
    Inventors: Jun Hirabayashi, Yutaka Matsuo, Minoru Fujita, Jun Arima
  • Publication number: 20200161557
    Abstract: Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same. In Chemical Formula 1, X, Ar, R1 to R3, a, b, and c are the same as defined in the detailed description.
    Type: Application
    Filed: November 15, 2019
    Publication date: May 21, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hiromasa Shibuya, Yeong Suk Choi, Yutaka Matsuo
  • Publication number: 20200058804
    Abstract: An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide having a recessed part 23 on the second surface 22, an epitaxial layer 30 made of gallium oxide and provided on a first surface 21 of the semiconductor substrate 20; an anode electrode 40 provided at a position overlapping the recessed part 23 as viewed in the lamination direction and brought into Schottky contact with the epitaxial layer 30, and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20 and brought into ohmic contact with the semiconductor substrate 20.
    Type: Application
    Filed: May 17, 2018
    Publication date: February 20, 2020
    Applicant: TDK CORPORATION
    Inventors: Jun HIRABAYASHI, Yutaka MATSUO, Minoru FUJITA, Jun ARIMA
  • Publication number: 20190173015
    Abstract: Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the fullerene derivative. In Chemical Formula 1, X, Ar, and R1 to R3 are the same as defined in the detailed description.
    Type: Application
    Filed: November 27, 2018
    Publication date: June 6, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hiromasa SHIBUYA, Norihito ISHII, Yeong Suk CHOI, Yutaka MATSUO