Abstract: According to one or more embodiments of the disclosure, a through-silicon via (TSV)-Bump structure is provide. The TSV-Bump structure comprises a TSV in a semiconductor substrate and a bump on the TSV. The bump includes a conductive plug portion and a step structure portion under the conductive plug portion. The step structure is configured to electrically couple the TSV and the conductive plug portion with each other.

Abstract: An apparatus includes a through-silicon via (TSV) including a conductive material; a first contact plug having an upper surface and a bottom surface directly connected to an upper surface of the TSV; a first wiring directly connected to the upper surface of the first contact plug; a second wiring having an upper surface; a second contact plug having an upper surface and a bottom surface directly connected to the upper surface of the second wiring; and a third wiring directly connected to the upper surface of the second contact plug; wherein the first wiring and the third wiring are in a substantially same level.

Abstract: Apparatuses and methods for manufacturing semiconductor memory devices are described.

Abstract: Apparatuses and methods for manufacturing semiconductor memory devices are described.

Abstract: A semiconductor device includes a semiconductor substrate, a through silicon via that penetrates through the semiconductor substrate in a thickness direction thereof, a first insulating region, a second insulating region formed below the first principal surface of the semiconductor substrate, and an isolation region made of an insulating material buried in a second trench formed below the first principal surface of the semiconductor substrate. The first insulating region is made of an insulating material buried in a first groove that surrounds the through silicon via and penetrates through the semiconductor substrate from a first principal surface thereof to a second principal surface thereof. The second insulating region is deeper than the second trench and shallower than the first trench.

Abstract: A positioning mechanism capable of decreasing width and size and a microscope using the positioning mechanism are provided. The positioning mechanism is provided with a supporting shaft possessing a spherical surface part at a prescribed position and guides disposed substantially parallel to the supporting shaft and is characterized, on the assumption that of the three-dimensional directions, the axial direction of the supporting shaft constitutes the z direction, by the fact that the supporting shaft is nipped by the guides at the position of the spherical surface part and enabled to oscillate on the spherical surface part as a fulcrum in the xy directions and as well slide in the z direction.

Abstract: A positioning mechanism capable of decreasing width and size and a microscope using the positioning mechanism are provided. The positioning mechanism is provided with a supporting shaft possessing a spherical surface part at a prescribed position and guides disposed substantially parallel to the supporting shaft and is characterized, on the assumption that of the three-dimensional directions, the axial direction of the supporting shaft constitutes the z direction, by the fact that the supporting shaft is nipped by the guides at the position of the spherical surface part and enabled to oscillate on the spherical surface part as a fulcrum in the xy directions and as well slide in the z direction.