Abstract: In a high temperature/high pressure vessel for treating a workpiece placed in the interior of the vessel at a high temperature and a high pressure wherein piano wire is wound under tension round an outer periphery of a cylindrical body to apply a compressive residual stress to the cylindrical body and axial openings of the cylindrical body are tightly closed with upper and lower lids so that the lids can be disengaged from the openings, the cylindrical body is constituted as a two-layer cylindrical body comprising an inner cylinder and an outer cylinder which is fitted on the inner cylinder through plural spacers arranged along an outer periphery surface of the inner cylinder, allowing cooling water flow paths to be formed each between adjacent such spacers so as to extend from one end side to an opposite end side of the tow-layer cylindrical body.

Abstract: The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

Abstract: In a high temperature/high pressure vessel for treating a workpiece placed in the interior of the vessel at a high temperature and a high pressure wherein piano wire is wound under tension round an outer periphery of a cylindrical body to apply a compressive residual stress to the cylindrical body and axial openings of the cylindrical body are tightly closed with upper and lower lids so that the lids can be disengaged from the openings, the cylindrical body is constituted as a two-layer cylindrical body comprising an inner cylinder and an outer cylinder which is fitted on the inner cylinder through plural spacers arranged along an outer periphery surface of the inner cylinder, allowing cooling water flow paths to be formed each between adjacent such spacers so as to extend from one end side to an opposite end side of the tow-layer cylindrical body.

Abstract: An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.

Abstract: A high-temperature high-pressure processing method for semiconductor wafers in which semiconductor wafers are charged into a pressure vessel to carry out processing under the gas atmosphere of high-temperature high-pressure, wherein the high-temperature high-pressure processing is carried out in the state that an anti-oxidizing body (an oxygen getter member) formed of a material having properties in which oxygen is apt to diffuse into interior is arranged within the pressure vessel whereby the anti-oxidizing body takes oxygen into the pressure vessel, thus preventing oxygen within the pressure vessel from being reduced to oxidize the surfaces of the semiconductor wafers in the high-temperature high-pressure processing.

Abstract: The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

Abstract: To provide a high-temperature and high-pressure treatment device in which articles to be treated such as wafers of LSI semiconductors can be transported in a stable attitude, and the entire apparatus is made compact.

Abstract: An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.

Abstract: A high-temperature high-pressure processing method for semiconductor wafers in which semiconductor wafers are charged into a pressure vessel to carry out processing under the gas atmosphere of high-temperature high-pressure, wherein the high-temperature high-pressure processing is carried out in the state that an anti-oxidizing body (an oxygen getter member) formed of a material having properties in which oxygen is apt to diffuse into interior is arranged within the pressure vessel whereby the anti-oxidizing body takes oxygen into the pressure vessel, thus preventing oxygen within the pressure vessel from being reduced to oxidize the surfaces of the semiconductor wafers in the high-temperature high-pressure processing.

Abstract: A method of forming an intact wiring film by applying a filling treatment with a metal material with no pores to holes/trenches, the method comprising forming a barrier layer 3 to an insulation film 2 having holes/trenches 2A, forming a seed layer by a PVD method on the surface of the barrier layer and laminating a wiring film 5A by a electrolytic plating method and heat treating the same under a high temperature/high pressure gas atmosphere.

Abstract: This invention provides a method of forming a metal wiring film excellent in EM resistance and low electric resistance. In a method of forming a wiring structure by filming and covering the surface of the insulating film of a substrate to be treated having a hole or groove formed thereon with a metallic material such as copper, aluminum, silver or the like, thereby filling the hole or groove inner part with the metallic material to form a wiring structure, the substrate to be treated is exposed to a high temperature under a high-pressure gas atmosphere after the continuous filming and covering with the metallic material along the inner surface profile of the hole or groove, whereby the surface diffusion phenomenon of the metallic material is promoted to reform the metal film into a film structure as the surface area of the metal film is minimized.

Abstract: In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.

Abstract: The present invention provides a method for processing a substrate in which crystal defects occurring according to ion implantation can be prevented from being integrated to form defects such as dislocation or large vacancies in the manufacture of a SIMOX substrate by implanting oxygen atom to a Si base by ion implantation and reacting it with Si to form a buried oxide film. The annealing after ion implantation is performed under a gas atmosphere pressurized to, for example, about 100 MPa. In the pressurized state, a structure having a smaller volume is thermodynamically more stable, and a behavior as increases crystal distortion is arrested in the annealing. Thus, crystal defects can be laid in uniformly dispersed state, vacancies can be also extinguished, and a Si base of good quality suitable for manufacture of ULSI in which defects such as dislocation are reduced can be provided.

Abstract: It is intended to provide a piston type gas compressor capable of replacing a seal ring of a piston with a new one while preventing incorporation of metallic particles into a processing gas. A gas suction port 9 and a gas discharge port 10 are formed in a flange 2 of a cylinder 3 in communication with a gas compressing space H. With a plug 7 removed from an internally threaded hole 6A, a free piston 5, together with a seal ring 4, can be inserted into and removed from the cylinder 3 through the internally threaded hole 6A.

Abstract: A heating pressure processing apparatus in which gas sealing property and safety can be ensured, and economic property can be improved in heating pressure processing of workpieces such as Si wafers sheet by sheet. A processing vessel 1 formed of vessel components 2, 3 is divided into at least two parts or more in the axial direction thereof and has a seal ring 9 provided in the divided parts of the vessel components 2, parts 3 in such a manner as to be replaceable. The vessel components 2, 3 have shaped parts forming a processing space 5 for a workpiece 4 when the divided parts are sealed through the seal ring 9, the vessel components 2, 3 also having cooling means 10 for the seal ring 9. A ram is provided 18 for pressing the vessel components 2, 3 in the axial direction of the vessel in order to ensure the sealing in the divided parts; and a gas introducing device 20 is provided for introducing a pressurized gas to the processing space 5 in order to process the workpiece.

Abstract: An interlocking device for a HIP equipment that prevents possible damage to the HIP equipment arising from use of a furnace or processing gas in error and can control the oxygen concentration and pressure within the HIP equipment. The device includes a sensor for detecting a concentration of oxygen in the processing gas in a processing gas pipe system. If the sensor detects an excessively high oxygen concentration, a supply side interlocking mechanism closes a valve for the pipe system and disconnects a power source for a furnace in a high pressure vessel. A flow switch is connected to a safety pipe system having a safety device, and a thermocouple is provided for each of the safety and processing gas pipe systems and a relief pipe system.

Abstract: A cooling device for a high pressure vessel which is simple in construction and high in safety and has a high cooling faculty without the necessity of changing a design of the high pressure vessel. The cooling device has a cylindrical cooling medium jacket having a cooling medium passage formed therein. The cooling medium jacket is removably disposed in a high pressure chamber of the high pressure vessel between the high pressure vessel and an insulation mantle surrounding a heater in the high pressure chamber such that a gap may be left between the high pressure vessel and the cooling medium jacket. The cooling medium jacket has a passage hole formed therein for establishing communication between the gap and the high pressure chamber to allow pressure medium to be introduced into the gap.