Abstract: A semiconductor laser device includes: a layered structure in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, and a contact layer are layered in a first direction, the layered structure including a facet in a second direction intersecting the first direction, the facet outputting laser light, a non-window region, and a window region, the window region having a bandgap larger than a bandgap of the non-window region; a first electrode electrically connected to the first conductivity type cladding layer; a second electrode that is formed on the contact layer and constitutes a current path through the layered structure with the first electrode; a passivation layer formed on the facet and having a bandgap larger than the bandgap of the window region; and a dielectric reflecting coating configured to cover an opposite side of the passivation layer from the facet.

Abstract: A submount includes a light emitting device mounted thereon. The submount includes: a base including a first surface extending in a first direction and in a second direction that is orthogonal to the first direction; a first electrode extending in the first direction and in the second direction on the first surface, the first electrode including a first end in the second direction, and a second end in opposite direction of the second direction, the second end extending in the first direction; and a second electrode extending in the first direction and in the second direction on the first surface, the second electrode including a third end in the opposite direction of the second direction, the third end being separated from the first end in the second direction with a gap therebetween, and a fourth end in the second direction, the fourth end extending in the first direction.

Abstract: An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and ?>? and ?>0 are satisfied where ? is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and ? is the contact area included in a half region on the second facet side.

Abstract: An electrode comprising a Ti layer and a Pt layer that are sequentially laid on a surface of a p-type semiconductor layer. Further, a thermal impedance per unit area of a contact portion that is in contact with the surface of the p-type semiconductor layer is equal to or smaller than 1.2×104 K/W·m2.

Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.

Abstract: A semiconductor-laser-chip-on-submount includes: a semiconductor laser chip that includes a semiconductor portion having an emitting facet and a rear facet along a longitudinal direction and emits laser light from the emitting facet; and a submount where the semiconductor laser chip is mounted. Further, a first distance between the submount and the emitting facet of the semiconductor portion is less than a second distance between the submount and the rear facet of the semiconductor portion.

Abstract: A submount on which a semiconductor device is mounted and which is mounted on a base made of metal, the submount including: a substrate; a first coating layer formed on a first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate; and a second coating layer formed on a second surface, positioned on a side opposite to the first surface, of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate, in which a coating area of the second coating layer is smaller than a coating area of the first coating layer.

Abstract: An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and ?>? and ?>0 are satisfied where ? is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and ? is the contact area included in a half region on the second facet side.

Abstract: A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.

Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.

Abstract: A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

Abstract: A laser apparatus includes light source elements outputting laser beams; a wavelength-selecting element disposed in an optical path of each of the laser beams and configured to cause light in a predetermined wavelength band to selectively transmit therethrough; and a partially transmissive-reflector that receives the light transmitted through the wavelength-selecting element, reflects a part of the input light toward the wavelength-selecting element, and causes its remainder to transmit therethrough.

Abstract: A submount on which a semiconductor device is mounted and which is mounted on a base made of metal, the submount including: a substrate; a first coating layer formed on a first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate; and a second coating layer formed on a second surface, positioned on a side opposite to the first surface, of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate, in which a coating area of the second coating layer is smaller than a coating area of the first coating layer.

Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.

Abstract: A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.

Abstract: A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

Abstract: To achieve stable multimode output even when driven by a drive current near a threshold value, provided is a laser apparatus comprising a semiconductor laser element; a wavelength selecting element that performs laser oscillation by forming a resonator between itself and a reflective surface of the semiconductor laser element to output oscillated laser light; and an optical system that is optically coupled to an emission surface of the semiconductor laser element with a coupling efficiency ? and inputs to the wavelength selecting element light output from the emission surface. The optical system causes a value that is correlated with a minimum light output within a linear light output region in which light output is linear with respect to an injection current injected to the semiconductor laser element to be less than this value occurring when the coupling efficiency ? is at a maximum.