Abstract: A Curable Silicone Composition, Encapsulant And Optical Semiconductor Device provides a curable silicone composition having excellent storage stability at room temperature. A curable silicone composition having (A) a resinous alkenyl group-containing organopolysiloxane including at least two alkenyl groups per molecule and at least one siloxane unit represented by SiO4/2; (B) an organohydrogenpolysiloxane having at least two silicon atom-bonded hydrogen atoms in one molecule; (C) an alkyne group-containing compound; and (D) a curing catalyst, wherein the content of the resinous alkenyl group-containing organopolysiloxane (A) is 20 mass % or more based on the total mass of the organopolysiloxane components.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.

Abstract: A Curable Silicone Composition, Encapsulant And Optical Semiconductor Device provides a curable silicone composition having excellent storage stability at room temperature. A curable silicone composition having (A) a resinous alkenyl group-containing organopolysiloxane including at least two alkenyl groups per molecule and at least one siloxane unit represented by SiO4/2; (B) an organohydrogenpolysiloxane having at least two silicon atom-bonded hydrogen atoms in one molecule; (C) an alkyne group-containing compound; and (D) a curing catalyst, wherein the content of the resinous alkenyl group-containing organopolysiloxane (A) is 20 mass % or more based on the total mass of the organopolysiloxane components.

Abstract: A thermosetting silicone composition provides excellent adhesiveness and durability even when cured in a short period of time. The thermosetting silicone composition comprises (A) a polyorganosiloxane having at least two alkenyl groups at both ends of the molecular chain, (B) a resinous organopolysiloxane having at least two alkenyl groups at the end of the molecular chain, (C) a polyorganosiloxane having at least two silicon atom-bonded hydrogen atoms at the side chain of the molecular chain, and (D) a curing reaction catalyst.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.

Abstract: Disclosed is a liquid silicone composition for transfer- or injection-molding optical parts. The liquid silicone composition comprises: (A) a linear organopolysiloxane having in a molecule at least two silicon-bonded C2-10 alkenyl groups and at least one silicon-bonded C6-20 aryl group; (B) an organopolysiloxane resin represented by a specific average unit formula; (C) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule; (D) a hydrosilylation reaction catalyst; and (E) a hydrosilylation reaction inhibitor.

Abstract: Disclosed is a liquid silicone composition for transfer- or injection-molding optical parts. The liquid silicone composition comprises: (A) a linear organopolysiloxane having in a molecule at least two silicon-bonded C2-10 alkenyl groups and at least one silicon-bonded C6-20 aryl group; (B) an organopolysiloxane resin represented by a specific average unit formula; (C) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule; (D) a hydrosilylation reaction catalyst; and (E) a hydrosilylation reaction inhibitor.

Abstract: In an LED module, modes to solve such a problem that a loss in the output of light discharged into the atmosphere occurs are embodied. Specifically, in an LED module in which an LED chip is sealed with a sealing resin, a surface of the sealing resin is covered with a thin film, the thin film is made of a material having a smaller linear expansion coefficient than the sealing resin, and an irregular surface is provided on a surface of the thin film such that light from the LED chip is multiply reflected.

Abstract: In an LED module, modes to solve such a problem that a loss in the output of light discharged into the atmosphere occurs are embodied. Specifically, in an LED module in which an LED chip is sealed with a sealing resin, a surface of the sealing resin is covered with a thin film, the thin film is made of a material having a smaller linear expansion coefficient than the sealing resin, and an irregular surface is provided on a surface of the thin film such that light from the LED chip is multiply reflected.

Abstract: The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane represented by a specific average unit formula and having at least two alkenyl groups in a molecule, (B) an optional straight-chain organopolysiloxane having at least two alkenyl groups and not having any silicon-bonded hydrogen atoms in a molecule, (C) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule, wherein at least 80 mass % of this component comprises an organotrisiloxane represented by the formula: H(CH3)2SiO(C6H5)2SiOSi(CH3)2H, and (D) a hydrosilylation reaction catalyst. The curable silicone composition has excellent handleability and high reactivity and forms a cured product with low gas permeability.

Abstract: The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane represented by a specific average unit formula and having at least two alkenyl groups in a molecule, (B) an optional straight-chain organopolysiloxane having at least two alkenyl groups and not having any silicon-bonded hydrogen atoms in a molecule, (C) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule, wherein at least 80 mass % of this component comprises an organotrisiloxane represented by the formula: H(CH3)2SiO(C6H5)2SiOSi(CH3)2H, and (D) a hydrosilylation reaction catalyst. The curable silicone composition has excellent handleability and high reactivity and forms a cured product with low gas permeability.

Abstract: A differential amplifier main circuit amplifies, while first voltage is applied to drains of first and second transistors via a load circuit and second voltage is applied to source of third transistor, a difference between voltages applied to gates of the first and second transistors, and outputs it from a connection between the load circuit and drains of the first or second transistor. A voltage application circuit applies voltage to the gate of the third transistor so that a current between the source and drain thereof to have a predetermined magnitude. Gates of transistors of the application circuit are connected to a second common-connection of drains thereof to which the first voltage is applied via a load, the second voltage is applied to a first common-connection of sources of the transistors, and a connection of the second common-connection and the load is connected to the gate of the third transistor.

Abstract: The semiconductor storage device according to the present invention comprises a switch provided to a bit line between a memory cells and a sense amplifier and capable of continuously varying a degree of conduction; and a switch control circuit for varying the degree of conduction of the switch in accordance with an access request signal. The semiconductor storage device of the present invention enables operation in which the degree of conduction between the sense amplifier and a memory cell is increased, and an ON state is achieved during a time in which the sense amplifier amplifies the holding voltage of the memory cell and feeds the amplified holding voltage to the bit line. The access time can thereby be reduced.

Abstract: The semiconductor storage device according to the present invention comprises a switch provided to a bit line between a memory cells and a sense amplifier and capable of continuously varying a degree of conduction; and a switch control circuit for varying the degree of conduction of the switch in accordance with an access request signal. The semiconductor storage device of the present invention enables operation in which the degree of conduction between the sense amplifier and a memory cell is increased, and an ON state is achieved during a time in which the sense amplifier amplifies the holding voltage of the memory cell and feeds the amplified holding voltage to the bit line. The access time can thereby be reduced.

Abstract: An image forming method comprising: imagewise exposing and thermal developing a photothermographic material using an image recording apparatus, wherein a part of the sheet is exposed and, in parallel with the exposure, development is started on a part of the sheet having been already exposed: wherein the photothermographic material comprises a reducing agent represented by formula (R), and wherein the photosensitive silver halide contains at least two preformed photosensitive silver halides having respective sensitivities different from each other for a light with the same exposure wavelength and a silver iodide content of the photosensitive silver halide is 40% by mole or more.

Abstract: The present invention provides a photothermographic material including a support having disposed on one surface thereof at least one image-forming layer containing a binder, an organic silver salt, a reducing agent for reducing silver ions, an organic polyhalogen compound and a photosensitive silver halide, wherein the photosensitive silver halide has a silver iodide content ranging from 10 mol % to 100 mol %. The silver halide further contains at least one metal selected from a first metal group and one metal selected from a second metal group, with a proviso that none of the at least one metal selected from the first metal group and the at least one metal selected from the second metal group are the same.

Abstract: The present invention provides a photothermographic material including a support having disposed on one surface thereof at least one image-forming layer containing a binder, an organic silver salt, a reducing agent for reducing silver ions, an organic polyhalogen compound and a photosensitive silver halide, wherein the photosensitive silver halide has a silver iodide content ranging from 10 mol % to 100 mol %. The silver halide further contains at least one metal selected from a first metal group and one metal selected from a second metal group, with a proviso that none of the at least one metal selected from the first metal group and the at least one metal selected from the second metal group are the same.

Abstract: The invention relates to a method for producing high-performance Cr—Ti—V hydrogen storage alloys utilizing a thermit process, whereby residence of adversely affecting impurities is inhibited, addition of not less than 10 at % of Ti as an alloy component is realized, and thermal burden on the crucible used in the method is reduced. The method includes the steps of: (A) providing an alloy material (1) comprising a Cr oxide, a V oxide, and a reducing agent Al, and an alloy material (2) comprising Ti; (B) placing the alloy materials in a crucible for thermit reduction so that the alloy material (1) is placed above the alloy material (2); (C) igniting the alloy material (1) placed in step (B) and melting all metal elements contained in the alloy materials the with heat of the thermit reaction of the alloy material (1); and (D) making the alloy melt obtained in step (C) into an alloy.

Abstract: An image forming method using a photothermographic material a photosensitive silver halide, a reducing agent, a binder and a non-photosensitive organic silver salt, wherein: the photothermographic material is discharged from a thermal developing device within 35 seconds after heating for thermal development is ceased.