Abstract: Disclosed is a microcrystalline-to-amorphous gold alloy-plated film having excellent electrical properties and excellent mechanical properties. Physical properties including both the advantageous properties of a crystalline structure and the advantageous properties of an amorphous structure can be obtained by allowing a microcrystalline phase and an amorphous phase to exist in a mixed state at a specific ratio. The average particle diameter of the microcrystals is 30 nm or smaller, the volume fraction of the microcrystals is 10 to 90%, the knoop hardness is Hk 180 or more, the specific resistivity is 200 ??-cm or less. In the film, hardness and abrasion resistance can be improved while maintaining a good specific resistivity value and chemical stability both inherent to gold at practically insignificant levels. Therefore, the film is useful as a material for connecting an electric or electronic component such as a connector and a relay.

Abstract: A gold-cobalt based amorphous alloy plated film consisting of a homogeneous amorphous phase not having microcrystals is formed by electroplating conducted by use of an electroplating bath containing a gold cyanide salt in a concentration of 0.01 to 0.1 mol/dm3 in terms of gold, a cobalt salt in a concentration of 0.02 to 0.2 mol/dm3 in terms of cobalt, and a tungstate in a concentration of 0.1 to 0.5 mol/dm3 in terms of tungsten. The gold-cobalt based amorphous alloy plated film obtained consists of a homogeneous amorphous phase not having microcrystals, and has an enhanced hardness while retaining the good contact resistance and chemical stability intrinsic of gold on such levels as to be free of problems on a practical use basis; therefore, the gold-cobalt based amorphous alloy plated film is effective for use as a contact material in electric and electronic component parts such as relays.

Abstract: A gold-cobalt based amorphous alloy plated film consisting of a homogeneous amorphous phase not having microcrystals is formed by electroplating conducted by use of an electroplating bath containing a gold cyanide salt in a concentration of 0.01 to 0.1 mol/dm3 in terms of gold, a cobalt salt in a concentration of 0.02 to 0.2 mol/dm3 in terms of cobalt, and a tungstate in a concentration of 0.1 to 0.5 mol/dm3 in terms of tungsten. The gold-cobalt based amorphous alloy plated film obtained consists of a homogeneous amorphous phase not having microcrystals, and has an enhanced hardness while retaining the good contact resistance and chemical stability intrinsic of gold on such levels as to be free of problems on a practical use basis; therefore, the gold-cobalt based amorphous alloy plated film is effective for use as a contact material in electric and electronic component parts such as relays.

Abstract: Disclosed is a method of monitoring electroless plating solutions. The solutions are used to plate a light-transmitting medium. Measurements are made to determine the time it takes for light transmission through the medium to be reduced to a certain level. This measurement can be used to determine whether articles will be sufficiently plated by the solutions.

Abstract: The invention is a process for electroplating palladium in which at least part of the palladium in the electroplating bath is added as a palladium ammine hydroxide. Both the solid form and solution form of palladium ammine hydroxide are useful in supplying palladium to the palladium electroplating bath. Both solution and crystals are chemically stable and can be stored for long periods of time. Further, use of the palladium ammine hydroxide compounds permit replenishment without accumulation of undesirable ions in the bath and also neutralizes hydrogen ions formed in the plating process.

Abstract: A palladium electroplating process is described in which certain unique anode structures are used. These anodes have surfaces made of conducting ferrites such as nickel ferrite. Such anodes have low oxygen overvoltage, high chemical stability and minimum decomposition of complexing agent in the palladium electroplating bath.

Abstract: A copper electroplating process is described in which the anode is surrounded by a cation-permeable membrane so as to prevent decomposition of additives in the electrochemical bath. Such a feature adds to bath lifetime and permits better control of bath chemistry and plating quality during the electroplating process. The feature is especially advantageous for copper electroplating processes using nonconsumable electrodes because of the high consumption of additives and that the copper can be added to the cathode side of the membrane so that acid copper ions need not pass through the membrane.

Abstract: The invention is a process for electroplating palladium in which at least part of the palladium in the electroplating bath is added as a palladium ammine hydroxide. Both the solid form of and solution form of palladium ammine hydroxide are useful in supplying palladium to the palladium electroplating bath. Both solution and crystals are chemically stable and can be stored for long periods of time. Further, use of the palladium ammine hydroxide compounds permit replenishment without accumulation of undesirable ions in the bath and also neutralizes hydrogen ions formed in the plating process.

Abstract: A process is described for the electrodepositon of copper on various surfaces. The process involves use of a nonconsumable counterelectrode. Of particular significance is the composition of the surface of the counterelectrode. The surface of the counterelectrode comprises iridium oxide and tantalum oxide. Such processes can be carried out at high speeds, with smaller and more efficient equipment and can use various copper compounds as a source of copper.

Abstract: A palladium electroplating procedure is described in which the bath is replenished by palladium hydroxide made in a special way. The palladium hydroxide is made by oxidation of palladium diammine dichloride in alkaline aqueous solution using hypochlorite ion as the oxidizing agent. Palladium hydroxide is ideal as a replenishing agent for palladium electroplating baths because it neutralizes hydrogen ions produced in the electroplating process and does not yield anions that accumulate in the bath.

Abstract: A process is described for making devices with aluminum-copper alloy in which the aluminum-copper alloy is etched in a basic solution. This procedure is particularly applicable to memory devices and bubble memory devices containing magnetic material (i.e., permalloy) where acid etches cannot be used. Excellent results are obtained with the basic etching solution. In particular the aluminum-copper alloy is completely removed and etching rates are sufficiently fast for commercial manufacturing operations.

Abstract: The gold content of a gold plating bath is replenished by circulating the plating solution through an AuCN containing vessel. The plating solution contains sufficient free cyanide to render the gold soluble by producing the soluble Au(CN).sub.2.sup.- ion.

Abstract: A particular type of electrode structure is described which is useful as a counter electrode in gold plating processes. The electrode surface comprises oxides of certain group eight elements and oxides of certain valve metals. A process for preparing the electrodes is also described. Such electrodes or anodes exhibit long life and reduced undesirable side reactions in the gold plating process. For example, consumption of buffer material is greatly reduced and formation of trivalent gold is reduced.

Abstract: A synthesis of gold (I) cyanide is described which exhibits high yields and does not yield toxic gases (e.g., HCN). Gold (I) cyanide is important as a source of gold for gold plating baths. A synthesis of AuCN that does not involve evolution of toxic gases (e.g., HCN) is highly advantageous because no disposal problem is involved and the procedure is simpler and more straightforward.

Abstract: A process is described for making III-V semiconductor devices with electroless gold plated layers. Various III-V semiconductors are used, particularly those containing gallium, aluminum and indium such as GaAs, Al.sub.x Ga.sub.1-x As, GaP, Al.sub.x Ga.sub.1-x P.sub.y As.sub.1-y, In.sub.x Ga.sub.1-x P.sub.y As.sub.1-y and InP. This process involves activation of a semiconductor surface and then electrolessly gold plating the surface. Electroless gold films produced in accordance with this process have good adherence to the semiconductor surface and are useful not only for electrical connection to the semiconductor, but also for attachment to headers for mechanical convenience and to maintain temperature stability. Exemplary devices are field effect transistors, particularly those operating in the microwave region, and semiconductor lasers.

Abstract: A process is described for making gold platings of low effective porosity. This process involves first putting down a gold layer on a surface and then passivating the surface using an electrochemical procedure. This process permits use of much thinner gold layers than ordinarily used without the danger of corrosion of underlying base metal.

Abstract: Certain reducible species are found in gold electroplating solutions which interfere with efficient electroplating of gold and make uncertain gold thickness predictions based on current throughput. A gold electroplating process is described which minimizes formation of undesirable reducible species. This process uses an anode of titanium having a coating of the oxides of ruthenium, iridium, rhodium, titanium or mixtures thereof. In addition, a procedure is described for removing such chemical species from the gold plating bath which does not adversely affect the gold electroplating solution.

Abstract: A process is described for making devices with gold plated surfaces in which a procedure is carried out to determine if visual defects in the gold plated surface have exposed base metal. This procedure is advantageous because defects with exposed base metal are detrimental to device reliability and longevity.