Abstract: An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: An electrode terminal includes: a first drawn-out part to be bonded to a main electrode; and a second drawn-out part that is formed of a plate member in a continuous fashion from one end portion to be positioned opposite to the main electrode with a gap therebetween until another end portion to be connected to an external circuit, so that a portion in the first drawn-out part that is adjacent to a portion therein to be bonded to the main electrode, is bonded to an opposing surface to the main electrode in said one end portion; wherein the first drawn-out part is formed so that the portion to be bonded to the main electrode is away from the opposing surface; and wherein an opening portion corresponding to the main electrode is formed in the second drawn-out part.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: An image processing apparatus, method and non-transitory computer program storage device cooperate to process successive images. Respective frames are created and positioned within the successive images, where each frame has a border. When changes between the frame borders are detected, a controller triggers the capturing of an image. This approach results in the capturing of interesting moments, even if the subject is not a human subject. The change in frame boundaries may be categorized in a variety of ways, including change in aspect ratio, shape, orientation, and position, for example. By detecting the changes in this way, an imaging device can capture images of interesting events automatically.

Abstract: A semiconductor device of the present invention includes a bonding target and an electrode terminal bonded to the bonding target. The electrode terminal and the bonding target are bonded by ultrasonic bonding at a bonding surface to be subjected to bonding. The electrode terminal includes a penetrating hollow part surrounded on at least two sides by the bonding surface.

Abstract: An electrode terminal includes: a first drawn-out part to be bonded to a main electrode; and a second drawn-out part that is formed of a plate member in a continuous fashion from one end portion to be positioned opposite to the main electrode with a gap therebetween until another end portion to be connected to an external circuit, so that a portion in the first drawn-out part that is adjacent to a portion therein to be bonded to the main electrode, is bonded to an opposing surface to the main electrode in said one end portion; wherein the first drawn-out part is formed so that the portion to be bonded to the main electrode is away from the opposing surface; and wherein an opening portion corresponding to the main electrode is formed in the second drawn-out part.

Abstract: An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.

Abstract: A method of improving accuracy and reliability of motion estimation is described herein. In one aspect, a 2D neighborhood of phase correlation peak is approximated with an outer-product of two 1D vectors to eliminate the sub-pixel error. In another aspect, estimation of reliability is improved. In yet another aspect, two-pass phase correlation is implemented to eliminate sub-pel motion bias.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: A semiconductor device of the present invention includes a bonding target and an electrode terminal bonded to the bonding target. The electrode terminal and the bonding target are bonded by ultrasonic bonding at a bonding surface to be subjected to bonding. The electrode terminal includes a penetrating hollow part surrounded on at least two sides by the bonding surface.

Abstract: The present invention relates to an image processing device and method, and a program whereby a subject can be imaged in a simpler manner with a desired imaging range. A size ratio calculating unit 553 calculates a size ratio between a region of interest that is a region of a subject of interest, and a partial region that is the region of a portion of the subject included in the region of interest with an imaged image that has been imaged, and a lens driving control unit 556 controls the zoom power of an imaged image according to a zoom operation by a user so that the size ratio calculated by the size ratio calculating unit 553, and a predetermined value match or generally match. The present invention may be applied to an imaging apparatus.

Abstract: A mass flow controller with high accuracy flow rate output control is disclosed. In the mass flow controller, relation data that indicates a corresponding relation between a flow rate of a reference gas and a CF value of a sample gas is stored, a target flow rate is converted into a reference gas flow rate by the use of a predetermined CF value, a sample gas flow rate is calculated from the converted reference gas flow rate and a CF value corresponding to the reference gas flow rate, the sample gas flow rate is compared with the target flow rate, and the CF value that is used for conversion of the reference gas flow rate or calculation of the sample gas flow rate is updated by the use of the corresponding relation based on the error between the sample gas flow rate and the target flow rate.

Abstract: An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: An image processing apparatus, method and non-transitory computer program storage device cooperate to process successive images. Respective frames are created and positioned within the successive images, where each frame has a border. When changes between the frame borders are detected, a controller triggers the capturing of an image. This approach results in the capturing of interesting moments, even if the subject is not a human subject. The change in frame boundaries may be categorized in a variety of ways, including change in aspect ratio, shape, orientation, and position, for example.