Abstract: Provided is a method of etching a metal oxide film in a laminate including a substrate and the metal oxide film formed on a surface thereof by an atomic layer etching method, the method including: a first step of introducing, into a treatment atmosphere storing the laminate, at least one oxidizable compound selected from the group consisting of: an alcohol compound; an aldehyde compound; and an ester compound; and a second step of introducing an oxidizing gas into the treatment atmosphere after the first step.

Abstract: The present invention provides a tungsten compound represented by the following general formula (1): (in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).

Abstract: Provided are a power element and an expansion valve using same that are capable of suppressing local deformation of a diaphragm while ensuring the transfer efficiency of a refrigerant. A power element includes a diaphragm; an upper lid member that is overlapped on one surface in the vicinity of the outer circumference of the diaphragm and forms a pressure working chamber PO with the diaphragm; a receiving member that is overlapped on another surface in the vicinity of the outer circumference of the diaphragm and forms a refrigerant inflow chamber LS with the diaphragm; and a stopper member housed in the refrigerant inflow chamber LS and in contact with the diaphragm, wherein the diaphragm is displaced within a range from a neutral position to a position displaced from the neutral position toward the upper lid member side.

Abstract: Provided are a power element and an expansion valve using same that are capable of suppressing local deformation of a diaphragm or the like while ensuring the transfer efficiency of a refrigerant. A power element includes a diaphragm; an upper lid member that is overlapped on one surface in the vicinity of the outer circumference of the diaphragm and forms a pressure working chamber PO with the diaphragm; a receiving member that is overlapped on another surface in the vicinity of the outer circumference of the diaphragm and forms a refrigerant inflow chamber LS with the diaphragm; and a stopper member housed in the refrigerant inflow chamber LS and in contact with the diaphragm, wherein a plate thickness near a support point of the diaphragm is thicker than a plate thickness at a central portion of the diaphragm.

Abstract: Provided are a power element and an expansion valve using same that are capable of obtaining a desired temperature/flow rate characteristic while being low cost. A power element includes a diaphragm; an upper lid member that is joined to one side of an outer circumferential portion of the diaphragm and forms a pressure working chamber PO with the diaphragm; an annular support point adjustment member that is joined to another side of an outer circumferential portion of the diaphragm; a receiving member that is joined to the support point adjustment member and forms a refrigerant inflow chamber LS with the diaphragm, and a stopper member housed in the refrigerant inflow chamber LS, wherein the diaphragm is capable of coming into contact with a support point of the support point adjustment member.

Abstract: Provided is a compound represented by the following general formula (1) or (2): where R1 to R4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M1 represents a gallium atom or an indium atom; where R7 to R10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M2 represents a gallium atom or an indium atom.

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

Abstract: An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

Abstract: The present invention provides a tungsten compound represented by the following general formula (1): (in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.