Abstract: Disclosed herein is a semiconductor device including a conductive member that has a main surface facing in a thickness direction, a semiconductor element that has a plurality of pads facing the main surface, a plurality of electrodes that are individually formed with respect to the plurality of pads and protrude from the plurality of pads toward the main surface, and a bonding layer for electrically bonding the main surface to the plurality of electrodes. The bonding layer includes a first region having conductivity and a second region having electrical insulation. The first region includes a metal portion. At least a part of the second region includes a resin portion.

Abstract: A semiconductor device is configured to increase energy absorbed by an active clamp. The semiconductor device comprises a semiconductor element, a sealing resin, and a coating member. The semiconductor element includes a first electrode. The sealing resin covers the semiconductor element. The coating member is interposed between the first electrode and the sealing resin. The coating member contains a material with higher thermal conductivity than the sealing resin.

Abstract: A semiconductor device includes: a substrate; a device region provided in the substrate; a terminal covering the device region in a plan view; a plurality of pseudo-bumps densely arranged on the terminal in a state of being opened from a wire; and at least one genuine bump arranged more sparsely than the plurality of the pseudo-bumps on the terminal in a state of being connected to the wire.

Abstract: A semiconductor device includes a switching element, a control element that controls the switching element, an island lead on which the switching element and the control element are mounted, and a plurality of terminal leads. The switching element includes a first electrode, a second electrode and a third electrode, where the first electrode and the second electrode are offset from the third electrode in a first sense of a thickness direction. The island lead has an obverse surface facing in the first sense of the thickness direction and supporting the switching element and the control element. Each terminal lead is electrically connected to the second electrode or the control element. The island lead is spaced apart from the plurality of terminal leads.

Abstract: A semiconductor element includes a main body and an obverse face electrode. The main body includes an obverse face that faces in a thickness direction. The obverse face electrode is electrically connected to the main body. The obverse face electrode includes a first section and a plurality of second sections. The first section is provided on the obverse face. The plurality of second sections are in contact with the first section, and spaced apart from each other in a direction perpendicular to the thickness direction. A total area of the plurality of second sections is smaller than an area of the first section including portions overlapping with the plurality of second sections, in a view along the thickness direction.

Abstract: Disclosed herein is a semiconductor device including a conductive member that has a main surface facing in a thickness direction, a semiconductor element that has a plurality of pads facing the main surface, a plurality of electrodes that are individually formed with respect to the plurality of pads and protrude from the plurality of pads toward the main surface, and a bonding layer for electrically bonding the main surface to the plurality of electrodes. The bonding layer includes a first region having conductivity and a second region having electrical insulation. The first region includes a metal portion. At least a part of the second region includes a resin portion.

Abstract: A semiconductor element includes a main body and an obverse face electrode. The main body includes an obverse face that faces in a thickness direction. The obverse face electrode is electrically connected to the main body. The obverse face electrode includes a first section and a plurality of second sections. The first section is provided on the obverse face. The plurality of second sections are in contact with the first section, and spaced apart from each other in a direction perpendicular to the thickness direction. A total area of the plurality of second sections is smaller than an area of the first section including portions overlapping with the plurality of second sections, in a view along the thickness direction.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: The present invention provides a sensor module for preventing the corrosion of electrode pads and a method of manufacturing the same. The sensor module A1 includes: an electronic component 2, having a mounting surface 2a and an installation surface 2b facing opposite sides, wherein the mounting surface 2a is disposed with electrode pads 21; an atmospheric pressure sensor 3, having a main surface 3a and an installation surface 3b facing opposite sides, and a side surface 3c connecting the main surface 3a to the installation surface 3b, and mounted on the mounting surface 2a of the electronic component 2 with the installation surface 3b facing the electronic component 2; a bonding wire 4, connected to the electrode pads 21; and a protective member 5, covering the electrode pads 21. The protective member 5 exposes a portion of the bonding wire 4 and is in contact with the side surface 3c of the atmospheric pressure sensor 3.

Abstract: A semiconductor device includes a first lead with a first block, a second lead with a second block, and a sealing resin partially covering the first and second leads. The first block is exposed from the sealing resin and has a first covered surface covered with an electroconductive layer, and a pair of first exposed surfaces spaced apart from each other via a part of the first covered surface. The second block is exposed from the sealing resin and has a second covered surface covered with an electroconductive layer, and a pair of second exposed surfaces spaced apart from each other via a part of the first covered surface.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: A semiconductor device includes a first lead with a first block, a second lead with a second block, and a sealing resin partially covering the first and second leads. The first block is exposed from the sealing resin and has a first covered surface covered with an electroconductive layer, and a pair of first exposed surfaces spaced apart from each other via a part of the first covered surface. The second block is exposed from the sealing resin and has a second covered surface covered with an electroconductive layer, and a pair of second exposed surfaces spaced apart from each other via a part of the first covered surface.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: The present invention provides a sensor module for preventing the corrosion of electrode pads and a method of manufacturing the same. The sensor module A1 includes: an electronic component 2, having a mounting surface 2a and an installation surface 2b facing opposite sides, wherein the mounting surface 2a is disposed with electrode pads 21; an atmospheric pressure sensor 3, having a main surface 3a and an installation surface 3b facing opposite sides, and a side surface 3c connecting the main surface 3a to the installation surface 3b, and mounted on the mounting surface 2a of the electronic component 2 with the installation surface 3b facing the electronic component 2; a bonding wire 4, connected to the electrode pads 21; and a protective member 5, covering the electrode pads 21. The protective member 5 exposes a portion of the bonding wire 4 and is in contact with the side surface 3c of the atmospheric pressure sensor 3.

Abstract: A semiconductor device includes: a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a semiconductor element mounted on the main surface of the substrate and having at least one element pad; a wire having a bonding portion bonded to the element pad; and a sealing resin formed on the main surface of the substrate for covering the wire and at least a portion of the semiconductor element. The semiconductor element has an element exposed side surface that faces in a direction crossing the thickness direction of the substrate and is exposed from the sealing resin.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

Abstract: A semiconductor device includes: a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a semiconductor element mounted on the main surface of the substrate and having at least one element pad; a wire having a bonding portion bonded to the element pad; and a sealing resin formed on the main surface of the substrate for covering the wire and at least a portion of the semiconductor element. The semiconductor element has an element exposed side surface that faces in a direction crossing the thickness direction of the substrate and is exposed from the sealing resin.

Abstract: A semiconductor device includes: a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a semiconductor element mounted on the main surface of the substrate and having at least one element pad; a wire having a bonding portion bonded to the element pad; and a sealing resin formed on the main surface of the substrate for covering the wire and at least a portion of the semiconductor element. The semiconductor element has an element exposed side surface that faces in a direction crossing the thickness direction of the substrate and is exposed from the sealing resin.

Abstract: An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.