Patents by Inventor Yuugo Goto

Yuugo Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8227851
    Abstract: It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: July 24, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoyuki Aoki, Koji Dairiki, Yuugo Goto
  • Patent number: 8228454
    Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: July 24, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno
  • Patent number: 8218105
    Abstract: To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: July 10, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Akio Endo, Yasuyuki Arai
  • Publication number: 20120171788
    Abstract: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
    Type: Application
    Filed: March 8, 2012
    Publication date: July 5, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toru TAKAYAMA, Junya MARUYAMA, Yuugo GOTO, Yumiko OHNO, Mai AKIBA
  • Patent number: 8193532
    Abstract: The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: June 5, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuyuki Arai, Akira Ishikawa, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yuko Tachimura
  • Publication number: 20120120336
    Abstract: There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 ?m or less, a height H is 0.5 ?m to 10 ?m, a diameter is 20 ?m or less, and an angle ? is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering to of light leakage due to orientation disturbance.
    Type: Application
    Filed: January 27, 2012
    Publication date: May 17, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshiharu HIRAKATA, Yuugo GOTO, Yuko KOBAYASHI, Shunpei YAMAZAKI
  • Publication number: 20120108014
    Abstract: An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high yield. Still another object is to manufacture a semiconductor device at low cost and with high productivity. With the use of a conductive shield, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit is prevented. The conductive shield is formed so that at least the conductive shields on the top and bottom surfaces are electrically connected by a plating method. In addition, a semiconductor device can be formed at low cost with high productivity because a plating method is used for the formation of the conductive shield.
    Type: Application
    Filed: November 3, 2011
    Publication date: May 3, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yuugo GOTO, Teruyuki FUJII
  • Patent number: 8158491
    Abstract: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: April 17, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Mai Akiba
  • Publication number: 20120070919
    Abstract: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
    Type: Application
    Filed: November 23, 2011
    Publication date: March 22, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toru TAKAYAMA, Yuugo GOTO, Yumiko FUKUMOTO, Junya MARUYAMA, Takuya TSURUME
  • Publication number: 20120037305
    Abstract: To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.
    Type: Application
    Filed: October 26, 2011
    Publication date: February 16, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Akio Yamashita, Yumiko Fukumoto, Yuugo Goto
  • Publication number: 20120037993
    Abstract: A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.
    Type: Application
    Filed: October 25, 2011
    Publication date: February 16, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Yuugo Goto, Tsutomu Murakawa
  • Publication number: 20120032966
    Abstract: The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.
    Type: Application
    Filed: October 19, 2011
    Publication date: February 9, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yasuyuki Arai, Noriko Shibata
  • Publication number: 20120007159
    Abstract: It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
    Type: Application
    Filed: September 16, 2011
    Publication date: January 12, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Junya MARUYAMA, Yumiko OHNO, Yuugo GOTO, Hideaki KUWABARA
  • Patent number: 8067294
    Abstract: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: November 29, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Yuugo Goto, Yumiko Fukumoto, Junya Maruyama, Takuya Tsurume
  • Publication number: 20110284858
    Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
    Type: Application
    Filed: August 8, 2011
    Publication date: November 24, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junya Maruyama, Toru Takayama, Yuugo Goto
  • Patent number: 8053253
    Abstract: An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high yield. Still another object is to manufacture a semiconductor device at low cost and with high productivity. With the use of a conductive shield covering a semiconductor integrated circuit, electrostatic breakdown due to electrostatic discharge of the semiconductor integrated circuit is prevented. The conductive shield is formed so that at least the conductive shields on the top and bottom surfaces are electrically connected by a plating method. In addition, a semiconductor device can be formed at low cost with high productivity because a plating method is used for the formation of the conductive shield.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: November 8, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuugo Goto, Teruyuki Fujii
  • Patent number: 8048251
    Abstract: To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.
    Type: Grant
    Filed: October 25, 2004
    Date of Patent: November 1, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akio Yamashita, Yumiko Fukumoto, Yuugo Goto
  • Patent number: 8047442
    Abstract: A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: November 1, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yuugo Goto, Tsutomu Murakawa
  • Patent number: 8044946
    Abstract: The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: October 25, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yasuyuki Arai, Noriko Shibata
  • Patent number: 8040456
    Abstract: To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.
    Type: Grant
    Filed: January 14, 2004
    Date of Patent: October 18, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Akio Endo, Yasuyuki Arai