Abstract: The invention provides a chroman derivative represented by the following Formula (I) that enables the production of an SMTP compound having a desired structure: wherein, in Formula (I), each of Y1 and Y2 independently represents a hydrogen atom, a hydroxy group, an alkoxy group, an aryloxy group, or a halogen atom; each of R1 and R2 independently represents a hydrogen atom, an alkyl group, an aryl group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, or a carbamoyl group; L represents an aliphatic hydrocarbon group having from 4 to 10 carbon atoms; each X independently represents a hydroxy group or a carboxy group; and n represents an integer from 0 to 2.

Abstract: The invention provides a chroman derivative represented by the following Formula (I) that enables the production of an SMTP compound having a desired structure: wherein, in Formula (I), each of Y1 and Y2 independently represents a hydrogen atom, a hydroxy group, an alkoxy group, an aryloxy group, or a halogen atom; each of R1 and R2 independently represents a hydrogen atom, an alkyl group, an aryl group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, or a carbamoyl group; L represents an aliphatic hydrocarbon group having from 4 to 10 carbon atoms; each X independently represents a hydroxy group or a carboxy group; and n represents an integer from 0 to 2.

Abstract: In a portion of a gate signal line and a portion of a common signal line, cutouts which are arranged perpendicular to the extending direction of these lines and open to face each other in an opposed manner are formed. A cruciform shape in appearance is formed by combining a gap defined between the gate signal line and the common signal line extending parallel to each other and the cutouts to each other. The cruciform portion formed in this manner is used as an alignment mark in the exposure of a photolithography step of a layer formed later. Due to such a constitution, in manufacturing a thin film transistor substrate, it is possible to realize the highly accurate alignment without forming a pattern only used for alignment.

Abstract: In a portion of a gate signal line and a portion of a common signal line, cutouts which are arranged perpendicular to the extending direction of these lines and open to face each other in an opposed manner are formed. A cruciform shape in appearance is formed by combining a gap defined between the gate signal line and the common signal line extending parallel to each other and the cutouts to each other. The cruciform portion formed in this manner is used as an alignment mark in the exposure of a photolithography step of a layer formed later. Due to such a constitution, in manufacturing a thin film transistor substrate, it is possible to realize the highly accurate alignment without forming a pattern only used for alignment.