Patents by Inventor Yuuichirou Imanishi

Yuuichirou Imanishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8454899
    Abstract: A gas reforming device including: a flow passage forming body flow passage through which process gas flows; a cathode provided on a cross section of the flow passage; an anode provided apart from the cathode, and including a bar-like portion; and a pulse power supply that applies a pulse voltage between the cathode and the anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: June 4, 2013
    Assignee: NGK Insulators, Ltd.
    Inventors: Naohiro Shimizu, Yuuichirou Imanishi, Sozaburo Hotta
  • Publication number: 20110135542
    Abstract: A gas reforming device including: a flow passage forming body flow passage through which process gas flows; a cathode provided on a cross section of the flow passage; an anode provided apart from the cathode, and including a bar-like portion; and a pulse power supply that applies a pulse voltage between the cathode and the anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows.
    Type: Application
    Filed: February 7, 2011
    Publication date: June 9, 2011
    Applicant: NGK Insulators, Ltd.
    Inventors: Naohiro SHIMIZU, Yuuichirou Imanishi, Sozaburo Hotta