Abstract: The present invention provides a film for a semiconductor device, which is capable of preventing interface delamination between each of the films, a film lifting phenomenon, and transfer of the adhesive film onto the cover film even during transportation or after long-term storage in a low temperature condition. The film for a semiconductor device of the present invention is a film in which an adhesive film and a cover film are sequentially laminated on a dicing film, in which a peel force F1 between the adhesive film and the cover film in a T type peeling test is within a range of 0.025 to 0.075 N/100 mm, a peel force F2 between the adhesive film and the dicing film is within a range of 0.08 to 10 N/100 mm, and F1 and F2 satisfy a relationship of F1<F2.

Abstract: An object of the present invention is to provide a thermosetting die-bonding film with which a die-bonding film is suitably broken with a tensile force. The object is achieved by a thermosetting die-bonding, film at least having an adhesive layer that is used to fix a semiconductor chip to an adherend, in which the breaking energy per unit area is 1 J/mm2 or less and the elongation at break is 40% or more to 500% or less at room temperature before thermal setting.

Abstract: The present invention has been made and an object thereof is to provide a thermosetting die-bonding film which can remarkably reduce working hours at the time of die bonding of a semiconductor chip, and a dicing die-bonding film including the thermosetting die-bonding film and a dicing film layered to each other. The present invention relates to a thermosetting die-bonding film used to produce a semiconductor device, comprising a thermosetting catalyst in a non-crystalline state in an amount within a range from 0.2 to 1 part by weight based on 100 parts by weight of an organic component in the film.