Patents by Inventor Yuuki Shibutani

Yuuki Shibutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
    Patent number: 8119534
    Abstract: A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: February 21, 2012
    Assignee: Nichia Corporation
    Inventors: Hisanori Tanaka, Yasunobu Hosokawa, Yuuki Shibutani
  • SEMICONDUCTOR LIGHT EMITTING DEVICE WITH PROTRUSIONS TO IMPROVE EXTERNAL EFFICIENCY AND CRYSTAL GROWTH
    Publication number: 20100197055
    Abstract: A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.
    Type: Application
    Filed: March 3, 2010
    Publication date: August 5, 2010
    Inventors: Hisanori TANAKA, Yasunobu Hosokawa, Yuuki Shibutani
  • Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
    Patent number: 7683386
    Abstract: A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: March 23, 2010
    Assignee: Nichia Corporation
    Inventors: Hisanori Tanaka, Yasunobu Hosokawa, Yuuki Shibutani
  • Semiconductor device
    Publication number: 20050179130
    Abstract: A substrate (10) has at least one recess (20) and/or protrusion (21) formed on the surface thereof so as to scatter or diffract the light generated in an active layer (12). The recess and/or protrusion is formed in such a shape that can reduce crystalline defect in semiconductor layers (11, 13).
    Type: Application
    Filed: August 18, 2004
    Publication date: August 18, 2005
    Inventors: Hisanori Tanaka, Yasunobu Hosokawa, Yuuki Shibutani