Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer contains at least one element selected from the group consisting of nitrogen and silicon.

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

Abstract: An electronic device includes: a capacitor; an insulating layer; at feast one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

Abstract: An image capture device includes pixels and a signal line that is arranged across two or more of the pixels. Each pixel includes: a semiconductor substrate, a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a first transistor including first and second impurity regions in the substrate; a wiring layer between the substrate and the second electrode; and a capacitor arranged between the wiring layer and the substrate in a normal direction of the substrate and including a third electrode, a fourth electrode between the third electrode and the substrate, and a dielectric layer. The first impurity region is electrically connected to the second electrode, the fourth electrode is electrically connected to one of the first and second impurity regions, and at least either the third or fourth electrodes covers the first impurity region when viewed along the normal direction.

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element that, in operation, generates a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including a first wiring layer and a second wiring layer which are provided between the semiconductor substrate and the photoelectric conversion element; and a circuitry that is provided in the semiconductor substrate and the multilayer wiring structure, and, in operation, processes the signal. The circuitry includes a first transistor and a first capacitance element. The first transistor includes a first gate, and a first source region and a first drain region which are provided in the semiconductor substrate. The first capacitance element includes a first electrode, a second electrode, and a dielectric film disposed between the first electrode and the second electrode. The first electrode is disposed between the photoelectric conversion element and the first gate of the first transistor.

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

Abstract: An imaging device includes: a semiconductor substrate; photoelectric converters which are disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and at least one capacitor disposed in the wiring layer. The at least one capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. At least part of the dielectric layer has a trench shape disposed between two adjacent photoelectric converters out of the photoelectric converters in plan view. At least one electrode selected from the group consisting of the first electrode and the second electrode has light-shielding properties.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.

Abstract: An image capture device includes pixels and a signal line that is arranged across two or more of the pixels. Each pixel includes: a semiconductor substrate, a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a first transistor including first and second impurity regions in the substrate; a wiring layer between the substrate and the second electrode; and a capacitor arranged between the wiring layer and the substrate in a normal direction of the substrate and including a third electrode, a fourth electrode between the third electrode and the substrate, and a dielectric layer. The first impurity region is electrically connected to the second electrode, the fourth electrode is electrically connected to one of the first and second impurity regions, and at least either the third or fourth electrodes covers the first impurity region when viewed along the normal direction.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer contains at least one element selected from the group consisting of nitrogen and silicon.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal.

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal.

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal.

Abstract: A substrate formed of an organic-inorganic hybrid material and provided with a reinforcement member in an inner periphery portion is used, as a signal transfer substrate, in a method for procuring a multilayer information recording medium having “n” information recording layers (“n” is an integer of two or more), the method including: applying an ultraviolet curable resin on a “k”th information recording layer (“k” is an integer of from 1 to (n?1)); bonding the signal transfer substrate having a signal surface including a concavo-convex shaped signal portion, to the applied resin, with the signal surface facing the resin; curing the resin by applying an ultraviolet ray to the resin from the substrate side while the substrate is bonded to the resin; and peeling the substrate from the cured resin by warping the inner periphery portion of the substrate. This method enables the signal transfer substrate to be used repeatedly.

Abstract: The invention provides a multilayer information recording medium manufacturing method, a multilayer information recording medium manufacturing apparatus, and a multilayer information recording medium that enable to make a distance from a light incident surface of the multilayer information recording medium to a farthest information recording layer thereof uniform within a plane of the medium.

Abstract: The recording/reproducing quality of a multilayer optical information recording medium deteriorate not only due to interference from other layers caused by light converging on other information layers but also due to stray light converging on the surface of a protective layer and stray light that does not converge on other information layers but rather returns to an optical head through the same optical path as the reproducing signal. The thickness composition of intermediate layers (106, 107, and 108) and the protective layer (109) in a four-layer optical information recording medium are set so as to eliminate the influence of interference caused by stray light from other layers reflected up to three times.

Abstract: Optical recording medium manufacturing includes: providing a first resin on a first recording layer; forming a first intermediate layer by performing first UV irradiation at a first dose to cure the first resin; providing a second recording layer on the first intermediate layer; providing a second resin on the second recording layer; forming a second intermediate layer by performing second UV irradiation at a second dose to cure the second resin; providing a third recording layer on the second intermediate layer; providing a third resin on the third recording layer; and forming a light transmitting layer by performing third UV irradiation at a third dose to cure the third resin. The first and second resins have substantially the same relationships between UV dose received and linear expansion coefficient. The first through third doses are such that UV doses received by the intermediate layers are substantially the same.