Abstract: A control apparatus of a capacitive touch sensor includes a capacitive sensor, a radio receiver, a setting unit, and a charge control unit. The capacitive sensor is coupled to a manipulation panel and detects an approach of a finger of a user to the manipulation panel and a touch of the finger on the manipulation panel. The radio receiver receives a radio broadcast at a radio receiving frequency. The setting unit sets a sensing frequency to a selected value, which is determined from a plurality of selectable sensing frequency values, corresponding to the radio receiving frequency. The charge control unit is coupled to a switching unit, and controls the switching unit to operate at the sensing frequency in order to charge and discharge an electrostatic capacitance generated between the capacitive sensor and the finger.

Abstract: When the operating characteristics of an intake valve are changed by an intake valve stop mechanism, an ECU outputs a command signal (control on) to a solenoid. At this time, a timing, at which the command signal is output to the solenoid, is determined on the basis of a rotational position of a crankshaft, calculated from a signal of a crank position sensor. However, the output timing is corrected on the basis of a rotational phase difference of a camshaft with respect to the crankshaft.

Abstract: When the operating characteristics of an intake valve are changed by an intake valve stop mechanism, an ECU outputs a command signal (control on) to a solenoid. At this time, a timing, at which the command signal is output to the solenoid, is determined on the basis of a rotational position of a crankshaft, calculated from a signal of a crank position sensor. However, the output timing is corrected on the basis of a rotational phase difference of a camshaft with respect to the crankshaft.

Abstract: A method of manufacturing a semiconductor device includes forming a via hole in an interlayer dielectric film, forming a wiring trench in said interlayer dielectric film for connecting to the via hole, and forming a dual damascene wiring trench in the interlayer dielectric film for forming a dual damascene wiring which is connected to a conductive film. In forming the via hole, the via hole is formed in a bow shape and, in forming the wiring trench, the wiring trench is formed by etching to a position where a diameter of the via hole becomes substantially a maximum to provide a via having a forward taper shape under the wiring trench.