Patents by Inventor Yuuta TAKEDA

Yuuta TAKEDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dry etching method, method for manufacturing semiconductor device, and etching device
    Patent number: 11618954
    Abstract: The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a ?-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first ?-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second ?-diketone into contact with the metal film after the first etching step. The first ?-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second ?-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: April 4, 2023
    Assignee: CENTRAL GLASS COMPANY, LIMITED
    Inventors: Yuuta Takeda, Kunihiro Yamauchi, Akifumi Yao
  • Substrate processing gas, storage container, and substrate processing method
    Patent number: 11447697
    Abstract: A substrate processing gas of the present invention contains IF5; and IF7, in which a content of the IF5 is equal to or more than 1 ppm and equal to or less than 2% on a volume basis with respect to a total amount of the IF5 and the IF7.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: September 20, 2022
    Assignee: CENTRAL GLASS COMPANY, LIMITED
    Inventors: Akifumi Yao, Yuuta Takeda, Jun Eto
  • DRY ETCHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING DEVICE
    Publication number: 20220056593
    Abstract: The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a ?-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first ?-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second ?-diketone into contact with the metal film after the first etching step. The first ?-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second ?-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.
    Type: Application
    Filed: February 19, 2020
    Publication date: February 24, 2022
    Applicant: CENTRAL GLASS COMPANY, LIMITED
    Inventors: Yuuta TAKEDA, Kunihiro YAMAUCHI, Akifumi YAO
  • SUBSTRATE PROCESSING GAS, STORAGE CONTAINER, AND SUBSTRATE PROCESSING METHOD
    Publication number: 20210054275
    Abstract: A substrate processing gas of the present invention contains IF5; and IF7, in which a content of the IF5 is equal to or more than 1 ppm and equal to or less than 2% on a volume basis with respect to a total amount of the IF5 and the IF7.
    Type: Application
    Filed: March 5, 2019
    Publication date: February 25, 2021
    Applicant: CENTRAL GLASS COMPANY, LIMITED
    Inventors: Akifumi YAO, Yuuta TAKEDA, Jun ETO