Patents by Inventor Yuuto Ootuki
Yuuto Ootuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8616936Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.Type: GrantFiled: March 2, 2012Date of Patent: December 31, 2013Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20120227331Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.Type: ApplicationFiled: March 2, 2012Publication date: September 13, 2012Inventors: Masato YOSHIDA, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Patent number: 8162725Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: GrantFiled: July 25, 2007Date of Patent: April 24, 2012Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Patent number: 8137159Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: GrantFiled: August 25, 2011Date of Patent: March 20, 2012Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20110312251Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: August 25, 2011Publication date: December 22, 2011Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Patent number: 7963825Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: GrantFiled: July 10, 2008Date of Patent: June 21, 2011Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Patent number: 7871308Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: GrantFiled: July 12, 2006Date of Patent: January 18, 2011Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Patent number: 7867303Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: GrantFiled: February 16, 2006Date of Patent: January 11, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Patent number: 7708788Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: GrantFiled: October 12, 2004Date of Patent: May 4, 2010Assignee: Hitachi Chemical Co, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20080271383Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: July 10, 2008Publication date: November 6, 2008Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20070266642Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: July 25, 2007Publication date: November 22, 2007Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20060248804Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: July 12, 2006Publication date: November 9, 2006Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Patent number: 7115021Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: GrantFiled: January 11, 2002Date of Patent: October 3, 2006Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20060180787Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 16, 2006Publication date: August 17, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20060118524Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 16, 2006Publication date: June 8, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20050085168Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: October 12, 2004Publication date: April 21, 2005Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Patent number: 6863700Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: GrantFiled: February 13, 2001Date of Patent: March 8, 2005Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20020090895Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: January 11, 2002Publication date: July 11, 2002Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20020069593Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 13, 2001Publication date: June 13, 2002Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Patent number: 6343976Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: GrantFiled: September 8, 2000Date of Patent: February 5, 2002Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno