Abstract: Novel inks and dopant materials and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel ink and dopant-based products.

Abstract: Nanostructured non-stoichiometric materials are disclosed. Novel catalysts and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel catalysts for petrochemical, polymers, plastics, specialty chemicals, environmental and pharmaceutical applications.

Abstract: Nanostructured non-stoichiometric materials are disclosed. Novel photonic materials and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel photonic and optical applications.

Abstract: Nanostructured non-stoichiometric materials are provided and electronic materials and their applications are discussed. More specifically, the uses of nanotechnology and nanostructured materials for electronic products.

Abstract: Nanostructured non-stoichiometric materials are disclosed. Novel biomedical materials and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel biomedical products.

Abstract: Nanostructured non-stoichiometric materials are disclosed. Novel magnetic materials and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel magnetic devices and products.

Abstract: Nanostructured non-stoichiometric materials are disclosed. Novel electromagnetic materials and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel electrical devices and products.

Abstract: Nanostructured non-equilibrium, non-stoichiometric materials and device made using the nanonostructured non-equilibrium non-stoichiometric materials are provided. Applications and methods of implementing such devices and applications are also provided. More specifically, the specifications teach the use of nanostructured non-equilibrium, non-stoichiometric materials in polymer and plastic filler applications, electrical devices, magnetic products, fuels, biomedical applications, markers, drug delivery, optical components, thermal devices, catalysts, combinatorial discovery of materials, and various manufacturing processes.

Abstract: Nanostructured non-stoichiometric materials and methods of reducing manufacturing and raw material costs through the use of nanostructured materials are provided. Specifically, use of non-stoichiometric materials of oxide, nitride, carbide, chalcogenides, borides, alloys and other compositions are taught.

Abstract: Nanoscale non-stoichiometric materials with unusual properties are disclosed. These materials offer a wide range of novel formulations for applications in catalysis, chemicals and fuels, electronics, electromagnetics, photonics, optics, sensors, electrochemical products, structural products, biomedical engineering, acoustics, composites, and other applications. Illustrative methods and processes are disclosed to highlight catalytic properties and electrical properties and to process these materials from powder or porous forms into dense forms and shapes. The invention includes a non-stoichiometric composition of a material, preferably in nanostructured form, for various applications including, but not limited to, methods to reduce the sintering temperature, the sintering time, or both.

Abstract: Multilayer ceramic chip capacitors which satisfy X7R requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers preferably contain BaTiO3 as the major component and CaTiO3, BaO, CaO, SrO, Si02, MnO2, Y2O3, and CoO as minor components in such proportions so that there are present 0.1 to 4 mol % CaTiO3, 0.1 to 2 mol % BaO, 0 to 1 mol % CaO, 0 to 1 mol % SrO, 0.1 to 5 mol % SiO2, 0.01 to 2 mol % MnO2, 0.1 to 3 mol % Y2O3, and 0.01 to 1 mol % CoO. The preferred form of the invention may be sintered in the temperature range 1,250 to 1,400° C.