Abstract: Apparatus is described including a tool, the tool including a shaft having a distal portion that is sized and shaped to be inserted into a subject during a surgical procedure. The tool includes a tissue-treatment tip, at the distal portion, that defines a beam deflector. An optical fiber is positioned to emit laser energy into the beam deflector. The beam deflector has a deflector surface, a first portion of which is shaped and positioned to reflect the laser energy toward a tissue-treatment tip surface, and a second portion of which is configured to absorb the laser energy and thermally conduct the absorbed energy to the tissue-treatment tip surface. The tissue-treatment tip surface is configured to thermally conduct the absorbed energy to the tissue by contacting the tissue. Other embodiments are also described.

Abstract: A tool has a handle and an elongate shaft that extends distally from the handle. A distal portion of the shaft is inserted into a subject during a surgical procedure. An optical fiber delivers laser energy to a tip at the distal portion of the shaft. The tip includes a mechanical cutting mechanism including a moving part that absorbs the laser energy, thermally conducts the absorbed energy to tissue that is disposed between the moving part and another part, and moves with respect to the other part in order to cut tissue that is disposed between the parts using a mechanical force that is lower than a mechanical force that would be required to cut the tissue in the absence of the laser energy. Other embodiments are also described.

Abstract: A tool has a handle and an elongate shaft that extends distally from the handle. A distal portion of the shaft is inserted into a subject during a surgical procedure. An optical fiber delivers laser energy to a tip at the distal portion of the shaft. The tip includes a mechanical cutting mechanism including a moving part that absorbs the laser energy, thermally conducts the absorbed energy to tissue that is disposed between the moving part and another part, and moves with respect to the other part in order to cut tissue that is disposed between the parts using a mechanical force that is lower than a mechanical force that would be required to cut the tissue in the absence of the laser energy. Other embodiments are also described.

Abstract: A tool has a handle and an elongate shaft that extends distally from the handle. A distal portion of the shaft is inserted into a subject during a surgical procedure. An optical fiber delivers laser energy to a tip at the distal portion of the shaft. The tip includes a mechanical cutting mechanism including a moving part that absorbs the laser energy, thermally conducts the absorbed energy to tissue that is disposed between the moving part and another part, and moves with respect to the other part in order to cut tissue that is disposed between the parts using a mechanical force that is lower than a mechanical force that would be required to cut the tissue in the absence of the laser energy. Other embodiments are also described.

Abstract: A tool has a handle and an elongate shaft that extends distally from the handle. A distal portion of the shaft is inserted into a subject during a surgical procedure. An optical fiber delivers laser energy to a tip at the distal portion of the shaft. The tip includes a mechanical cutting mechanism including a moving part that absorbs the laser energy, thermally conducts the absorbed energy to tissue that is disposed between the moving part and another part, and moves with respect to the other part in order to cut tissue that is disposed between the parts using a mechanical force that is lower than a mechanical force that would be required to cut the tissue in the absence of the laser energy. Other embodiments are also described.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.

Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.