Patents by Inventor Yuvaraj Krishnamoorthy

Yuvaraj Krishnamoorthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NAND field use erase plus defect detections
    Patent number: 10886002
    Abstract: A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes setting, in response to the first defect detection operation detecting a defect, a defect status indicator. The method also includes performing the standard erase operation on the at least one memory cell. The method also includes performing a second defect detection operation on the at least one memory cell. The method also includes setting, in response to the second defect detection operation detecting a defect, the defect status indicator.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: January 5, 2021
    Assignee: SanDisk Technologies LLC
    Inventors: Daniel Linnen, Avinash Rajagiri, Yuvaraj Krishnamoorthy, Srikar Peesari, Ashish Ghai, Dongxiang Liao
  • NAND FIELD USE ERASE PLUS DEFECT DETECTIONS
    Publication number: 20200395092
    Abstract: A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes setting, in response to the first defect detection operation detecting a defect, a defect status indicator. The method also includes performing the standard erase operation on the at least one memory cell. The method also includes performing a second defect detection operation on the at least one memory cell. The method also includes setting, in response to the second defect detection operation detecting a defect, the defect status indicator.
    Type: Application
    Filed: June 13, 2019
    Publication date: December 17, 2020
    Applicant: SanDisk Technologies LLC
    Inventors: Dan Linnen, Avi Rajagiri, Yuvaraj Krishnamoorthy, Srikar Peesari, Ashish Ghai, Dongxiang Liao
  • Non-volatile memory with in field failure prediction using leakage detection
    Patent number: 9711227
    Abstract: To prevent data loss due to latent defects, a non-volatile memory system will use a leakage detection circuit to test for small amounts of leakage that indicate that the memory is susceptible to failure.
    Type: Grant
    Filed: April 28, 2016
    Date of Patent: July 18, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Ashish Ghai, Yuvaraj Krishnamoorthy, Ekamdeep Singh, Kalpana Vakati, Maythin Uthayopas, Mark Shlick, Srikar Peesari