Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device includes a first dielectric layer, a first bonding pad disposed in the first dielectric layer, and a first bonding layer on the first dielectric layer. The second device wafer includes a second dielectric layer, a second bonding layer on the second dielectric layer, and a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer. A conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer include a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface.

Abstract: The present invention provides a method for preventing and/or treating a NSAID-induced gastric ulcer. The method comprises administrating an effective amount of a lactic acid bacterium set to a subject. The lactic acid bacterium set comprises Lactobacillus plantarum GKD7 and Pediococcus acidilactici GKA4.

Abstract: A circuit to cancel the effect of parasitic capacitances (“initial signals”) in calculations as to precise touch locations on a touch display screen (signal compensation circuit) includes first and second compensation circuits connected to a charge-discharge node. The first compensation circuit receives initial signals, generates first charging currents to charge, and first discharging currents to discharge, the charging-discharging node. The second compensation circuit generates second charging currents to charge, and second discharging currents to discharge, the charging-discharging node. Values of the first charging currents, the second charging currents, the first discharging currents, and the second discharging currents are of different magnitudes and are applied in order to amount to a more precise match for the exact compensation value required.

Abstract: A Bluetooth communication system includes: a Bluetooth host device; and a Bluetooth device set which including a first member device and a second member device. The first member device is arranged to operably transmit a corresponding first device information to the Bluetooth host device. The second member device is arranged to operably transmit a corresponding second device information to the Bluetooth host device. The Bluetooth host device is arranged to operably control a display device to simultaneously display a first device item for representing the first member device and a second device item for representing the second member device in a graphical user interface. The Bluetooth host device is further arranged to operably establish a Bluetooth connection with the first member device and conduct pairing procedure with the first member device after receiving a selection command corresponding to the first member device.

Abstract: Exemplary video processing methods and apparatuses for encoding or decoding a current block by inter prediction are disclosed. Input data of a current block is received and partitioned into sub-partitions and motion refinement is independently performed on each sub-partition. A reference block for each sub-partition is obtained from one or more reference pictures according to an initial motion vector (MV). A refined MV for each sub-partition is derived by searching around the initial MV with N-pixel refinement. One or more boundary pixels of the reference block for a sub-partition is padded for motion compensation of the sub-partition. A final predictor for the current block is generated by performing motion compensation for each sub-partition according to its refined MV. The current block is then encoded or decoded according to the final predictor.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: Aspects of the disclosure provide a frame processor for processing frames with aliasing artifacts. For example, the frame processor can include a super-resolution (SR) and anti-aliasing (AA) engine and an attention reference frame generator coupled to the SR and AA engine. The SR and AA engine can be configured to enhance resolution and remove aliasing artifacts of a frame to generate a first high-resolution frame with aliasing artifacts and a second high-resolution frame with aliasing artifacts removed. The attention reference frame generator can be configured to generate an attention reference frame based on the first high-resolution frame and the second high-resolution frame.

Abstract: A power system including a first battery pack, a second battery pack, and a power management circuit is disclosed. The first battery pack has a first end and a second end, and has a first battery capacity. The second battery pack has a third end and a fourth end. The third end is coupled to the second end of the first battery pack and provides a low battery voltage. The fourth end is grounded, the second battery pack has a second battery capacity, and the second battery capacity is greater than the first battery capacity. The power management circuit is coupled to the second battery pack to receive the low battery voltage, and provides a component operating voltage to an electronic components based on the low battery voltage.

Abstract: Methods and systems for thermal management of hardware resources that may be used to provide computer implemented services are disclosed. The disclosed thermal management method and systems may improve the likelihood of data processing systems providing desired computer implemented services by improving the thermal management of the hardware resources without impairment of storage devices. To improve the likelihood of the computer implemented services being provided, the systems may proactively identify whether storage devices subject to impairment due to dynamic motion are present. If such storage devices are present, then the system may automatically take action to reduce the likelihood of the storage devices being subject to dynamic motion sufficient to impair their operation.

Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: Methods and apparatus for forming a semiconductor device package with a transmission line using a micro-bump layer are disclosed. The micro-bump layer may comprise micro-bumps and micro-bump lines, formed between a top device and a bottom device. A signal transmission line may be formed using a micro-bump line above a bottom device. A ground plane may be formed using a redistribution layer (RDL) within the bottom device, or using additional micro-bump lines. The RDL formed ground plane may comprise open slots. There may be RDLs at the bottom device and the top device above and below the micro-bump lines to form parts of the ground planes.

Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: An IC structure includes a transistor, a source/drain contact, a metal oxide layer, a non-metal oxide layer, a barrier structure, and a via. The transistor includes a gate structure and source/drain regions on opposite sides of the gate structure. The source/drain contact is over one of the source/drain regions. The metal oxide layer is over the source/drain contact. The non-metal oxide layer is over the metal oxide layer. The barrier structure is over the source/drain contact. The barrier structure forms a first interface with the metal oxide layer and a second interface with the non-metal oxide layer, and the second interface is laterally offset from the first interface. The via extends through the non-metal oxide layer to the barrier structure.

Abstract: A composition for promoting defecation includes a cell culture of at least one lactic acid bacterial strain which is substantially free of cells. The least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32, Bifidobacterium animalis subsp. lactis CP-9, and Lactobacillus acidophilus TYCA06, which are respectively deposited at the Bioresource Collection and Research Center (BCRC) under accession numbers BCRC 910437, BCRC 910645 and BCRC 910813. Also disclosed is a method for promoting defecation, including administering to a subject in need thereof an effective amount of the composition.