Abstract: A display system includes a light source and a first optical system coupled to the light source and adapted to provide an illumination beam along an illumination path. The display system also includes a spatial light modulator positioned in the illumination path. The spatial light modulator includes a semiconductor substrate including a plurality of electrode devices and a hinge structure coupled to the semiconductor substrate. The hinge structure includes silicon material. The spatial light modulator also includes a mirror post coupled to the hinge structure and extending to a predetermined distance from the semiconductor substrate and a mirror plate coupled to the mirror post and overlying the plurality of electrode devices. The display system further includes a second optical system coupled to the spatial light modulator and adapted to project an image onto a projection surface.

Abstract: A method of forming a package for a MEMS structure coupled to a substrate includes depositing an encapsulant material on the substrate and patterning the encapsulant material to form a plurality of encapsulated structures. The method also includes depositing a first capping layer on the substrate and forming one or more release hole patterns in the first capping layer. The method further includes removing the encapsulant material and depositing a second capping layer.

Abstract: A resonator includes a CMOS substrate having a first electrode and a second electrode. The CMOS substrate is configured to provide one or more control signals to the first electrode. The resonator also includes a resonator structure including a silicon material layer. The resonator structure is coupled to the CMOS substrate and configured to resonate in response to the one or more control signals.

Abstract: A system accessing and transmitting data frames includes: at least one subscriber network interface, and/or at least one inter-network interface, and a data converting device coupled with the subscriber network interface and the inter-network interface. The data converting device includes: a virtual private device, an interface device, and a processing device. The virtual private device is configured for exchanging data frames between the subscriber network interface and the inter-network interface via interface device.

Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

Abstract: This invention discloses a ring network and a method for implementing the service thereof. The ring network includes multiple nodes in a same logic layer for accessing a service to the ring network or receiving a service from the ring network; two virtual channels of reverse directions, which connect the adjacent nodes and are utilized to bear and adapt service data; a physical link, which is utilized to bear the service data adapted to the virtual channel.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Abstract: An optical deflection device for a display application. The optical deflection device includes a semiconductor substrate including an upper surface region and one or more electrode devices provided overlying the upper surface region. The optical deflection device also includes a hinge device including a silicon material and coupled to the upper surface region. The optical deflection device further includes a spacing defined between the upper surface region and the hinge device and a mirror structure including a post portion coupled to the hinge device and a mirror plate portion coupled to the post portion and overlying the hinge device.

Abstract: A method for forming an optical deflection device includes providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate. The upper surface region includes one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region. The method also includes forming a planarizing material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. The method further includes forming a thickness of silicon material at a temperature of less than 300 ° C. to maintain a state of the planarizing material.

Abstract: A display system includes a light source and a first optical system coupled to the light source and adapted to provide an illumination beam along an illumination path. The display system also includes a spatial light modulator positioned in the illumination path. The spatial light modulator includes a semiconductor substrate including a plurality of electrode devices and a hinge structure coupled to the semiconductor substrate. The hinge structure includes silicon material. The spatial light modulator also includes a mirror post coupled to the hinge structure and extending to a predetermined distance from the semiconductor substrate and a mirror plate coupled to the mirror post and overlying the plurality of electrode devices. The display system further includes a second optical system coupled to the spatial light modulator and adapted to project an image onto a projection surface.

Abstract: The present invention discloses a method for implementing link state passing-through in network, for informing the peer of link fault, said method comprising the following steps: the service device detecting whether there is a link fault in the network; in case of link fault, the service device transferring link fault information to peer service device with a control frame; in response to said control frame containing link fault information, the peer service device disconnecting the user's link and performing corresponding processes; the user at the faulty peer communicating with peer user through the spare network; when said link recovers to normal, the service device at the recovery peer sending a control frame containing link fault recovery information to peer service device to reestablish communication between said users on said link. The present invention is capable of informing the peer of link fault and reducing extra overhead under normal network conditions as much as possible.

Abstract: A method of manufacturing bonded substrate structures. The method includes providing a first substrate comprising a first surface region and processing the first surface region to form a first pattern region using a first photolithographic stepper characterized by a first tolerance criteria for alignment. The method also includes providing a second substrate comprising a second surface region and processing the second surface region through at least one masking process to form a second pattern region using a second photolithographic stepper characterized by a second tolerance criteria for alignment.

Abstract: A system for accessing and transmitting data frames of different types in a digital transmission network, including: at least one user-network interface; at least one network-network interface; at least one mapping/demapping device; a virtual interface device coupled with the at least one user-network interface and with the at least one network-network interface via the at least one mapping/demapping device; and a control device coupled with the virtual interface device; the control device including: a data processing and dispatching device including: at least one inter-device interface; a data processing and dispatching unit coupled with the inter-device interface; a processing flow database, storing a plurality of processing flows, coupled with the data processing and dispatching unit; and a control interface unit coupled with the processing flow database and the data processing and dispatching unit so as to control a virtual private processing unit and a rule database to process the data frames.

Abstract: A method and system for accessing and transmitting different types data frames in a digital transmission network, wherein the system includes a data processing and dispatching device having at least an inter-device interface, a processing flow database, and a control interface unit, and wherein the method includes the steps of extracting type number information from data frames, searching for rules in the processing flow database corresponding to the extracted type number, determining the retrieved result and discard the data frames if the retrieval result is blank, otherwise extracting an inter-device interface number and outputting the data frames via the inter-device interface with the extracted inter-device interface number.

Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

Abstract: Methods are provided for processing a substrate including etching conductive materials with amorphous carbon materials disposed thereon. In one aspect, the invention provides a method for processing a substrate including forming a conductive material layer on a surface of the substrate, depositing an amorphous carbon layer on the conductive material layer, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the conductive material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as a hardmask, an etch stop, or an anti-reflective coating.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.