Patents by Inventor Yuya Matsubara
Yuya Matsubara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935750Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.Type: GrantFiled: February 25, 2021Date of Patent: March 19, 2024Assignee: KIOXIA CORPORATIONInventors: Kei Watanabe, Toshiyuki Sasaki, Soichi Yamazaki, Shunsuke Ochiai, Yuya Matsubara
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Publication number: 20240068094Abstract: A piping includes a first pipe part having a first end connected to a processing chamber and a second end connected to another piping; a second pipe part connected to the first pipe between the first end and the second end, and configured to supply hydrogen gas or hydrogen radicals into the first pipe part; a valve provided between the second pipe part and the second end, and configured to open and close the first pipe part; and a metal film coated on an inner wall of the first pipe part.Type: ApplicationFiled: August 23, 2023Publication date: February 29, 2024Applicant: Kioxia CorporationInventor: Yuya MATSUBARA
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Patent number: 11859286Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a first gas feeder, a first gas processor and a second gas feeder. The first gas feeder is provided above a stage on which a substrate is to be placed and feeds a first gas to the substrate. The first gas processor supplies high frequency power to the stage and renders the first gas fed from the first gas feeder into plasma. The second gas feeder is provided above the stage and feeds a second gas more difficult to render into plasma than the first gas to an outer periphery of the first gas having been rendered into plasma.Type: GrantFiled: September 8, 2020Date of Patent: January 2, 2024Assignee: Kioxia CorporationInventors: Yuya Matsubara, Hiroshi Kubota
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Patent number: 11823872Abstract: According to one embodiment, an electrostatic chuck apparatus includes a substrate support plate formed of a dielectric material. The substrate support plate includes: a plurality of support bases protruding from an upper surface of the substrate support plate, a plurality of ground electrodes formed inside the substrate support plate, each of the ground electrodes at a corresponding position to a respective one the support bases, and an electrostatic chuck electrode provided below the ground electrodes.Type: GrantFiled: September 1, 2021Date of Patent: November 21, 2023Assignee: KIOXIA CORPORATIONInventor: Yuya Matsubara
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Patent number: 11766635Abstract: According to one embodiment, a gas recovering apparatus includes a casing and a tube. The casing is provided with an inlet through which a gas flows in, a first outlet for discharging a first gas containing a gas to be recovered of the gas, and a second outlet for discharging a second gas other than the first gas of the gas. The casing is evacuated via the first outlet. The tube is provided in the casing from the inlet to the second outlet, and has a high permeability to the first gas and a low permeability to the second gas.Type: GrantFiled: June 17, 2021Date of Patent: September 26, 2023Assignee: Kioxia CorporationInventor: Yuya Matsubara
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Publication number: 20220319842Abstract: A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.Type: ApplicationFiled: June 20, 2022Publication date: October 6, 2022Applicant: KIOXIA CORPORATIONInventors: Yuya MATSUBARA, Masayuki KITAMURA, Atsuko SAKATA
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Patent number: 11393675Abstract: A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.Type: GrantFiled: February 22, 2019Date of Patent: July 19, 2022Assignee: KIOXIA CORPORATIONInventors: Yuya Matsubara, Masayuki Kitamura, Atsuko Sakata
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Patent number: 11373865Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.Type: GrantFiled: August 27, 2020Date of Patent: June 28, 2022Assignee: KIOXIA CORPORATIONInventors: Takehiro Kondoh, Junichi Hashimoto, Soichi Yamazaki, Yuya Matsubara
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Patent number: 11367624Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.Type: GrantFiled: March 2, 2020Date of Patent: June 21, 2022Assignee: KIOXIA CORPORATIONInventors: Junichi Hashimoto, Kaori Narumiya, Kosuke Horibe, Soichi Yamazaki, Kei Watanabe, Yusuke Kondo, Mitsuhiro Omura, Takehiro Kondoh, Yuya Matsubara, Junya Fujita, Toshiyuki Sasaki
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Publication number: 20220191449Abstract: An image processing device includes an input interface and at least one processor. The input interface is configured to acquire an image obtained by image-capturing a surrounding region of a mobile body. The computation unit is configured to process the image obtained by image-capturing the surrounding region. The computation unit is configured to execute first processing of detecting, from the image, a region in which the mobile body is movable, and second processing of calculating an adjustment parameter for adjusting the image on the basis of the region in which the mobile body is movable.Type: ApplicationFiled: March 3, 2020Publication date: June 16, 2022Applicant: KYOCERA CorporationInventor: Yuya MATSUBARA
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Publication number: 20220108877Abstract: According to one embodiment, an electrostatic chuck apparatus includes a substrate support plate formed of a dielectric material. The substrate support plate includes: a plurality of support bases protruding from an upper surface of the substrate support plate, a plurality of ground electrodes formed inside the substrate support plate, each of the ground electrodes at a corresponding position to a respective one the support bases, and an electrostatic chuck electrode provided below the ground electrodes.Type: ApplicationFiled: September 1, 2021Publication date: April 7, 2022Applicant: Kioxia CorporationInventor: Yuya MATSUBARA
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Publication number: 20220072473Abstract: According to one embodiment, a gas recovering apparatus includes a casing and a tube. The casing is provided with an inlet through which a gas flows in, a first outlet for discharging a first gas containing a gas to be recovered of the gas, and a second outlet for discharging a second gas other than the first gas of the gas. The casing is evacuated via the first outlet. The tube is provided in the casing from the inlet to the second outlet, and has a high permeability to the first gas and a low permeability to the second gas.Type: ApplicationFiled: June 17, 2021Publication date: March 10, 2022Applicant: Kioxia CorporationInventor: Yuya MATSUBARA
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Patent number: 11177135Abstract: A mask member contains tungsten (W), boron (B), and carbon (C). The mask member includes a first portion in contact with a process film, the first portion, in which the terms of the composition ratio, which correspond to boron and carbon, are larger than the term of the composition ratio, which corresponds to tungsten, and a second portion in which the term of the composition ratio, which corresponds to tungsten, is larger than the terms of the composition ratio, which correspond to carbon and boron.Type: GrantFiled: February 22, 2019Date of Patent: November 16, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yuya Matsubara, Masayuki Kitamura, Atsuko Sakata
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Publication number: 20210335610Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.Type: ApplicationFiled: February 25, 2021Publication date: October 28, 2021Applicant: Kioxia CorporationInventors: Kei WATANABE, Toshiyuki SASAKI, Soichi YAMAZAKI, Shunsuke OCHIAI, Yuya MATSUBARA
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Publication number: 20210287903Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.Type: ApplicationFiled: August 27, 2020Publication date: September 16, 2021Applicant: Kioxia CorporationInventors: Takehiro KONDOH, Junichi HASHIMOTO, Soichi YAMAZAKI, Yuya MATSUBARA
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Publication number: 20210277520Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a first gas feeder, a first gas processor and a second gas feeder. The first gas feeder is provided above a stage on which a substrate is to be placed and feeds a first gas to the substrate. The first gas processor supplies high frequency power to the stage and renders the first gas fed from the first gas feeder into plasma. The second gas feeder is provided above the stage and feeds a second gas more difficult to render into plasma than the first gas to an outer periphery of the first gas having been rendered into plasma.Type: ApplicationFiled: September 8, 2020Publication date: September 9, 2021Applicant: Kioxia CorporationInventors: Yuya MATSUBARA, Hiroshi KUBOTA
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Publication number: 20210066090Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.Type: ApplicationFiled: March 2, 2020Publication date: March 4, 2021Applicant: KIOXIA CORPORATIONInventors: Junichi HASHIMOTO, Kaori NARUMIYA, Kosuke HORIBE, Soichi YAMAZAKI, Kei WATANABE, Yusuke KONDO, Mitsuhiro OMURA, Takehiro KONDOH, Yuya MATSUBARA, Junya FUJITA, Toshiyuki SASAKI
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Patent number: 10872782Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film on a substrate. The method further includes forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×1020 atoms/cm3 or more. The method further includes etching the stacked film using the mask layer as an etching mask.Type: GrantFiled: September 5, 2019Date of Patent: December 22, 2020Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yuya Matsubara, Hiroshi Kubota
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Publication number: 20200294811Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film on a substrate. The method further includes forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×1020 atoms/cm3 or more. The method further includes etching the stacked film using the mask layer as an etching mask.Type: ApplicationFiled: September 5, 2019Publication date: September 17, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yuya MATSUBARA, Hiroshi Kubota
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Publication number: 20200090931Abstract: A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.Type: ApplicationFiled: February 22, 2019Publication date: March 19, 2020Applicant: Toshiba Memory CorporationInventors: Yuya MATSUBARA, Masayuki Kitamura, Atsuko Sakata