Abstract: A block copolymer composition contains a block copolymer having a vinyl aromatic hydrocarbon monomer unit and a conjugated diene monomer unit. The block copolymer composition satisfies: when a total of the vinyl aromatic hydrocarbon monomer unit and the conjugated diene monomer unit in the composition is taken as 100 mass %, a content of the conjugated diene monomer unit is 10-20 mass %; the composition contains 60-100 mass % of the block copolymer having a structure represented by (S)-[(S/B)]2 where (S) is a polymer chain of the vinyl aromatic hydrocarbon monomer unit, and (S/B) is a copolymer chain having the vinyl aromatic hydrocarbon monomer unit and the conjugated diene monomer unit; Mn of the block copolymer contained in the composition is 100,000-200,000; and when storage moduli measured at 70° C. and 100° C. in dynamic viscoelasticity measurement are defined as E?70 and E?100, V in V=E?70×(E?70?E?100)/30 is 0.5×1016-2.0×1016.

Abstract: A polishing apparatus including: a turntable with an attached polishing pad; a polishing head that holds a wafer; a tank that stores a polishing agent; a polishing agent supply mechanism which supplies the stored polishing agent to the polishing pad; a waste liquid receiver which collects the polishing agent flowing from the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the collected polishing agent to the tank, the polishing agent is supplied to the polishing pad from the tank with the polishing agent supply mechanism, the used polishing agent which flows from the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the pad to polish it while supplying the collected polishing agent to the tank to circulate the polishing agent, and the waste liquid receiver is fixed to the turntable and the waste liquid receiver having a bottom plate and a removable side plate.

Abstract: A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.

Abstract: A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

Abstract: The present invention provides a polishing apparatus including: a turntable which has a polishing pad attached thereto; a polishing head configured to hold a wafer; a tank configured to store a polishing agent; a polishing agent supply mechanism which supplies the polishing agent stored in the tank to the polishing pad; a waste liquid receiver which collects the polishing agent flowing down from an upper side of the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the polishing agent collected by the waste liquid receiver to the tank, the polishing agent is supplied to the polishing pad from the tank by the polishing agent supply mechanism, the used polishing agent which flows down from the upper side of the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the polishing pad so that it is polished while supplying the collected polishing agent to the tank to circulate the polishing agent, a

Abstract: A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

Abstract: A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.