Abstract: In a method of measuring a three dimensional shape of an arbitrary fine pattern on a semiconductor device, an optical measurement system carries out a measurement to obtain cross-section information, and an electron microscope obtains an electron beam image of the arbitrary fine pattern. Plane information and cross-section information obtained from the electron beam image of the arbitrary fine pattern are combined to measure the three dimensional shape of the arbitrary fine pattern.

Abstract: A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, the method and apparatus may execute the following steps: calculating an average of the dimensional values of a plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of the feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be determined precisely.

Abstract: A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Abstract: A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.

Abstract: A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Abstract: A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Abstract: In a method of measuring a three dimensional shape of an arbitrary fine pattern on a semiconductor device, an optical measurement system carries out a measurement to obtain cross-section information, and an electron microscope obtains an electron beam image of the arbitrary fine pattern. Plane information and cross-section information obtained from the electron beam image of the arbitrary fine pattern are combined to measure the three dimensional shape of the arbitrary fine pattern.

Abstract: A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, The method and apparatus for executing following steps of calculating an average of the dimensional values of said plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of said feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be required precisely by the above subject matter.

Abstract: Disclosed are a method and a system for manufacturing a semiconductor device by which it is possible to manufacture a semiconductor device while enabling evaluation of a manufacturing process for a super-miniaturized actual circuit pattern at a high speed by utilizing a three-dimensional measuring technique based on the use of an optical scatterometry apparatus. The method of manufacturing a semiconductor device comprising the step of forming a test pattern and an actual circuit pattern by a predetermined semiconductor manufacturing process, to thereby manufacture a product semiconductor device, wherein features of the three-dimensional shape of the test pattern formed in the product semiconductor device are measured by use of the optical scatterometry apparatus, and the semiconductor manufacturing process for the actual circuit pattern of the product semiconductor device is thereby evaluated.

Abstract: A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Abstract: A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.