Abstract: The present invention relates to an apparatus and a method of electrochemical mechanical polishing (ECMP) for microelectronics applications. The apparatus and method of electrochemical mechanical polishing can be used planarize NiP substrate for a magnetic storage medium and for a process which allows polishing with a controlled surface finish, and a set of corresponding polishing electrolytes and slurry.

Abstract: The present invention relates to compositions for chemical mechanical polishing (CMP—also referred to as chemical mechanical planarization) for fabrication of an advanced optical, photonic, or microelectronic device, wherein the composition is a microemulsion.

Abstract: A chemical mechanical polishing slurry containing multiple oxidizers and nano abrasive particles (including engineered nano diamond particles) suitable for polishing multilayer substrate with tungsten and Ti/TiN barrier layers. The slurry contains no metallic catalyst and has low total abrasive particle content. The absence of metal ions can be advantageous for certain applications as certain metal ions may present contamination issues. A low total abrasive content may also lower the total defect counts, reduce the slurry waste treatment burden, and simplify the post CMP clean process.

Abstract: An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeric organic component and at least one other chemical component different from the at least one nonpolymeric organic component. The slurry composition can be vastly simplified if one or more of the components are incorporated into the abrasive particles. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: Compositions and methods suitable for the electrochemical mechanical planarization of a conductive material layer on a semiconductor workpiece. Compositions contain a phosphonic acid based electrolyte, a corrosion inhibitor, a chelating agent, a pH adjusting agent, and a solvent as the remainder.

Abstract: This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer for removal of an overburden thereof. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate.

Abstract: A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.

Abstract: This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.

Abstract: A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.

Abstract: A system and method for providing process control in a CMP system utilizes a vacuum-assisted arrangement for conditioning a wafer polishing pad so that the effluent (i.e., wafer debris, polishing slurry, chemical or other by-products) from the conditioning process is diverted from the waste stream and instead introduced into an analysis module for further processing. The analysis module functions to determine at least one parameter within the effluent and generate a process control signal based upon the analysis. The process control signal is then fed back to the planarization process to allow for the control of various parameters such as polishing slurry composition, temperature, flow rate, etc. The process control signal can also be used to control the conditioning process and/or determining the endpoint of the planarization process itself.

Abstract: An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeric organic component and at least one other chemical component different from the at least one nonpolymeric organic component. The slurry composition can be vastly simplified if one or more of the components are incorporated into the abrasive particles. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001–20 w/w % of non-polymeric organic particles, 0.1–10 w/w % of an oxidizing agent, 0.05–10 w/w % of a chelating agent, 0.01–10 w/w % of a surfactant, and 0–10 w/w % of a passivation agent at a pH in the range of 2–12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: A system and method for providing process control in a CMP system utilizes a vacuum-assisted arrangement for conditioning a wafer polishing pad so that the effluent (i.e., wafer debris, polishing slurry, chemical or other by-products) from the conditioning process is diverted from the waste stream and instead introduced into an analysis module for further processing. The analysis module functions to determine at least one parameter within the effluent and generate a process control signal based upon the analysis. The process control signal is then fed back to the planarization process to allow for the control of various parameters such as polishing slurry composition, temperature, flow rate, etc. The process control signal can also be used to control the conditioning process and/or determining the endpoint of the planarization process itself.

Abstract: A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.

Abstract: A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001-20 w/w % of non-polymeric organic particles, 0.1-10 w/w % of an oxidizing agent, 0.05-10 w/w % of a chelating agent, 0.01-10 w/w % of a surfactant, and 0-10 w/w % of a passivation agent at a pH in the range of 2-12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate.

Abstract: This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.

Abstract: The present invention provides a method of removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure having a plurality of copper lines. The method includes providing a chemical-mechanical polishing slurry and polishing the copper layer using the slurry until the tantalum-based barrier layer is exposed. The slurry includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that retards the corrosion of said copper lines during chemical mechanical polishing. Preferred non-chelating free radical quenchers are ascorbic acid, thiamine, 2-propanol, and alkyl glycols. The present invention also provides copper damascene structures formed according to the method.

Abstract: This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (“CMP”) of semiconductor and other microelectronic substrates.