Patents by Inventor Yuzo Mizobuchi
Yuzo Mizobuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130061660Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.Type: ApplicationFiled: September 14, 2012Publication date: March 14, 2013Applicant: Ideal Star Inc.Inventors: Yasuhiko Kasama, Kenji Omote, Kuniyoshi Yokoo, Yuzo Mizobuchi, Haruna Oizumi, Morihiko Saida, Hiroyuki Sagami, Kazuaki Mizokami, Takeo Furukawa
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Patent number: 8381587Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.Type: GrantFiled: May 8, 2008Date of Patent: February 26, 2013Assignee: Ideal Star Inc.Inventors: Yasuhiko Kasama, Kenji Omote, Kuniyoshi Yokoo, Yuzo Mizobuchi, Haruna Oizumi, Morihiko Saida, Hiroyuki Sagami, Kazuaki Mizokami, Takeo Furukawa
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Patent number: 8367033Abstract: In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.Type: GrantFiled: April 20, 2007Date of Patent: February 5, 2013Inventors: Hiroshi Okada, Yoshinori Sibata, Kuniyoshi Yokoo, Yuzo Mizobuchi, Kenji Omote, Yasuhiko Kasama
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Publication number: 20100206049Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.Type: ApplicationFiled: May 8, 2008Publication date: August 19, 2010Applicants: IDEAL STAR INC., TOKYO UNIVERSITY OF SCIENCE EDUCATION FOUNDATION ADMINISTRATIVE ORGANIZATIONInventors: Yasuhiko Kasama, Kenji Omote, Kuniyoshi Yokoo, Yuzo Mizobuchi, Haruna Oizumi, Morihiko Saida, Hiroyuki Sagami, Kazuaki Mizokami, Takeo Furukawa
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Publication number: 20090230979Abstract: Fullerenes are a novel material that has been expected to serve as a promising material in the construction of organic devices. However, the electric conductivity of fullerenes, which has been, reported heretofore spreads over a wide range including values corresponding to insulators as well as those corresponding to semiconductors. The present invention makes it possible to improve the conductivity of fullerenes highly reproducibly by heating the fullerenes at a specified temperature in an inert gas which is flowed under a specified condition, that is, by controlling the concentration of impurities, particularly oxygen and water adsorbed to the fullerenes.Type: ApplicationFiled: September 5, 2006Publication date: September 17, 2009Applicant: IDEAL STAR INC.Inventors: Kenji Omote, Yuzo Mizobuchi, Yasuhiko Kasama
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Publication number: 20090105386Abstract: In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.Type: ApplicationFiled: April 20, 2007Publication date: April 23, 2009Inventors: Hiroshi Okada, Yoshinori Sibata, Kuniyoshi Yokoo, Yuzo Mizobuchi, Kenji Omote, Yasuhiko Kasama
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Patent number: 4933926Abstract: The invention provides an image forming medium and method, and a recording and playback apparatus in which signals can be recorded on the medium sequentially, similar to a magnetic tape or the like, or simultaneously two dimensionally, similar to a photographic film. The recording medium includes a laminate formed on the surface of a semiconductor substrate having a conductive layer on the undersurface thereof. The laminate is formed of an oxide film, a nitrided film, a photoconductive semiconductor layer and a transparent conductive layer. For recording, an optical image is directed onto the transparent conductive layer while applying a predetermined potential between the transparent conductive layer and the conductive layer.Type: GrantFiled: February 11, 1988Date of Patent: June 12, 1990Assignee: Fuji Photo Film Co., Ltd.Inventors: Masatoshi Tabei, Yuzo Mizobuchi
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Sensitivity compensating method for solid-state image pickup element used in electronic still camera
Patent number: 4825293Abstract: A method for compensating changes which would otherwise be produced in a video output signal when the shutter speed exceeds a certain value, even though the same light level of the received image is maintained on the image pickup. In one embodiment, the shutter speed and/or aperture setting are adjusted to compensate. The amplification factor of the output video signal can also be adjusted. In other embodiments, gamma correction is effected separately for each primary color signal to compensate for the changes which affect the color signals in different amounts as the shutter speed is increased.Type: GrantFiled: October 16, 1987Date of Patent: April 25, 1989Assignee: Fuji Photo Film Co., Ltd.Inventors: Kiyotaka Kobayashi, Masatoshi Tabei, Madoka Arashi, Yuzo Mizobuchi -
Patent number: 4737259Abstract: An element for electrophoresis suitably employable for electrophoresis of biopolymers such as proteins, as well as for the determination of the base sequence of DNA, RNA, their fragments, and their derivatives, which comprises a plastic support, a nonconductive metal oxide layer, and an electrophoresis medium layer comprising an aqueous polyacrylamide gel formed by crosslinking polymerization of an acrylamide compound and a crosslinking agent in the presence of water, which are superposed in this order. The electrophoresis medium layer may contain a water-soluble polymer and agarose. The medium layer may contain a modifier such as an anionic surfactant, formamide or urea.Type: GrantFiled: December 29, 1986Date of Patent: April 12, 1988Assignee: Fuji Photo Film Co., Ltd.Inventors: Masashi Ogawa, Masakazu Hashiue, Yuzo Mizobuchi
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Patent number: 4714950Abstract: A solid-state photo sensor device includes a first electrode layer for allowing light to pass therethrough, a first amorphous silicon layer of one conductivity type formed below the first electrode layer, a second amorphous silicon layer of a conductivity type, other than the one conductivity type, disposed below the first amorphous silicon layer, and an output circuit for delivering in the form of an electric current photocarriers excited at least in the second amorphous silicon layer. The first and second amorphous silicon layers each contain inpurity elements whose concentration ranges from about 0 molPPM to 200 molPPM. The output circuit delivers as an electric current also photocarriers excited in the first amorphous silicon layer.Type: GrantFiled: June 27, 1985Date of Patent: December 22, 1987Inventors: Kazuhiro Kawajiri, Hiroshi Tamura, Haruji Shinada, Mitsuo Saito, Yuzo Mizobuchi
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Patent number: 4463083Abstract: A thermal recording element comprising a support having formed thereon a recording layer, a first protective layer comprising an organic high molecular weight material having a softening point below about 70.degree. C. formed on the recording layer, and a second protective layer comprising an organic high molecular weight material having high mechanical strength.Type: GrantFiled: May 11, 1982Date of Patent: July 31, 1984Assignee: Fuji Photo Film Co., Ltd.Inventors: Masao Kitajima, Osamu Seshimoto, Tomizo Namiki, Fumiaki Shinozaki, Tomoaki Ikeda, Yuzo Mizobuchi
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Patent number: 4361638Abstract: An electrophotographic light-sensitive element and process for the production thereof are described, wherein the element comprises an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine.Type: GrantFiled: October 30, 1980Date of Patent: November 30, 1982Assignee: Fuji Photo Film Co., Ltd.Inventors: Akio Higashi, Kazuhiro Kawashiri, Yuzo Mizobuchi
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Patent number: 4349617Abstract: A function separated type electrophotographic light-sensitive member and a process for production thereof are described, said member comprising an electrically conductive support, a light-sensitive layer made of a hydrogen-doped amorphous silicon semiconductor, and an organic electric charge transport layer containing at least one positive charge transport carrier selected from the group consisting of pyrazolines, aryl-alkanes, arylketones, arylamines and chalcones.Type: GrantFiled: October 23, 1980Date of Patent: September 14, 1982Assignee: Fuji Photo Film Co., Ltd.Inventors: Kazuhiro Kawashiri, Yuzo Mizobuchi, Akio Higashi, Hiroshi Tamura, Keiji Takeda, Masayoshi Nagata
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Patent number: 4309713Abstract: A thermal recording element comprising a support, a recording layer formed thereon and a chlorinated polyolefin layer formed on said recording layer.Type: GrantFiled: June 26, 1979Date of Patent: January 5, 1982Assignee: Fuji Photo Film Co., Ltd.Inventors: Fumiaki Shinozaki, Tomizo Namiki, Masao Kitajima, Tomoaki Ikeda, Yuzo Mizobuchi
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Patent number: 4286045Abstract: An image forming material comprising a support having thereon a layer composed of a Ge-S composition or a Ge-S-X composition wherein X represents at least one element selected from the group consisting of Al, Si, Mg, Ti, V, Mn, Co, Ni, Sn, Zn, Pd, In, Se, Te, Fe, I, P and O which undergoes a structural change capable of being detected optically, electrically or chemically upon exposure imagewise to light wherein the Ge-S or Ge-S-X composition layer has a thickness of at least about 300 A and contains therein at least one element selected from the group consisting of Ag, Cu and Pb in an amount of more than 2 atoms of Ag, Cu and/or Pb based on 100 atoms of the Ge-S composition or the Ge-S-X composition.Type: GrantFiled: November 15, 1979Date of Patent: August 25, 1981Assignee: Fuji Photo Film Co., Ltd.Inventors: Akira Nahara, Yoshihiro Ono, Tomizo Namiki, Shigeo Harada, Yuzo Mizobuchi, Tomoaki Ikeda
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Patent number: 4282534Abstract: A thermal recording element comprising a support having formed thereon a recording layer, a first protective layer of a halogenated polyolefin, polystyrene, polystyrene derivative, halogenated rubber or styrene-vinyltoluene copolymer formed on the recording layer; and a second protective layer of a polymer having strong film strength formed on the first protective layer.Type: GrantFiled: June 26, 1979Date of Patent: August 4, 1981Assignee: Fuji Photo Film Co., Ltd.Inventors: Fumiaki Shinozaki, Tomizo Namiki, Masao Kitajima, Tomoaki Ikeda, Yuzo Mizobuchi
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Patent number: 4268575Abstract: A thermal recording element comprising a support having formed thereon a recording layer and formed on the recording layer, a protective layer containing a polymer, and a higher fatty acid having 10 or more carbon atoms or an amide thereof present in or on the protective layer.Type: GrantFiled: August 7, 1979Date of Patent: May 19, 1981Assignee: Fuji Photo Film Co., Ltd.Inventors: Fumiaki Shinozaki, Tomizo Namiki, Masao Kitajima, Tomoaki Ikeda, Yuzo Mizobuchi
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Patent number: 4259433Abstract: A disk-recording plate is produced by successively forming an etching layer and a laser-sensitive layer on a substrate. The assembly is exposed to the irradiation of laser beams to selectively remove the laser-sensitive layer and is then subjected to a sputter-etching treatment in an atmosphere of a reactive gas to remove the etching layer at portions corresponding to the removed portions of the laser-sensitive layer. The method permits monitoring of recording, and thus ensures accurate recording with good resolution.Type: GrantFiled: April 24, 1979Date of Patent: March 31, 1981Assignee: Fuji Photo Film Co., Ltd.Inventors: Yuzo Mizobuchi, Masamichi Sato, Tsunehiko Takahashi
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Patent number: 4237468Abstract: A mono- or multi- layer recording member, suitable for recording using e.g., a laser, comprising a support having a recording layer thereon wherein the recording layer contains (a) a metal selected from the group consisting of Sn, Bi and In and (b) a halide capable of being thermally or photo-chemically activated by high energy density light irradiation and which thereby can promote a thermally initiated phase or structure change of the metal (a).Type: GrantFiled: December 21, 1977Date of Patent: December 2, 1980Assignee: Fuji Photo Film Co., Ltd.Inventors: Akira Nahara, Minoru Wada, Yuzo Mizobuchi, Tomoaki Ikeda
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Patent number: 4199357Abstract: A composition for a recording material comprising a bismuth-sulfur series material or a bismuth-germanium-sulfur series material.Type: GrantFiled: January 16, 1978Date of Patent: April 22, 1980Assignee: Fuji Photo Film Co., Ltd.Inventors: Satoshi Yoshida, Yuzo Mizobuchi, Tomoaki Ikeda, Toshio Iijima