Abstract: To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°. In the ion implantation device, first, second and third chambers 12A, 14A and 16A are arranged in predetermined places on a beam line, first and second gaps 20A and 22A intervene between the first chamber 12A and the second chamber 14A and between the second chamber 14A and the third chamber 16A, the second chamber 14A is electrically insulated from the first and third chambers 12A and 16A via first and second electrode pairs 26A and 28A attached to the first and second gaps 20A and 22A, respectively, the first and second electrode pairs 26A and 28A obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamber 14 is connected to a scanning power source 40A which applies an electric potential having desired scanning waveform.

Abstract: An ion implantation device that suppresses diffusion of an ion beam, can finely control a scanning waveform, and can obtain a large scanning angle of about 10°. In the ion implantation device, first, second, and third chambers are arranged in predetermined places on a beam line, first and second gaps intervene between the first chamber and the second chamber and between the second chamber and the third chamber. The second chamber is electrically insulated from the first and third chambers via first and second electrode pairs attached to the first and second gaps, respectively. The first and second electrode pairs obliquely cross a standard axis of the ion beam at a predetermined angle in opposite directions, and the second chamber is connected to a scanning power source that applies an electric potential having a desired scanning waveform.

Abstract: In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.

Abstract: In an ion implantation system including (a) ion source means, (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate, the ion source means consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected, mass-separated ions from the ion source are led to the acceleration portion, and stencil mask means is arranged approximately to the semiconductor substrate in the end station chamber.

Abstract: A parallel scan type ion implanter comprising multipole electrostatic deflectors and designed to produce an even and uniform dose distribution on the entire area of the substrate by maintaining the moving speed of the ion beam spot constant on the substrate is characterized in that it holds the rate of raising or lowering the deflection voltage stepwise along the vertical direction (Y-direction) constant and the manner of varying the rate of changing the deflection voltage along the horizontal direction (X-direction) with time as the function of the location of the moving beam spot on the substrate determined by the dimensional parameters of the multipole electrostatic deflectors assuming that the rate is normalized by the rate of changing the deflecting voltage when the beam spot passes the center of the substrate.

Abstract: An ion implantation apparatus is provided with an ion source and a mass spectrometer having an analyzer magnet and is adapted to take out ions having a predetermined kinetic energy and mass from other ions produced in the ion source. It further includes a scanner system for scanning an ion beam of the take-out ions and irradiating the ion beam onto a substrate. The scanner system includes a deflection electro-magnet which is disposed downstream of the mass spectrometer for deflecting the ion beam in a predetermined plane with respect to a reference axis. A second vacuum chamber portion through which the ion beam passes in the magnetic field of the deflection electro-magnet is provided and a first vacuum chamber portion electrically independent of the second vacuum chamber portion is also provided through which the ion beam passes in the magnetic field of the mass analyzer. A third vacuum chamber portion is also provided through which the ion beam passes and in which the substrate is arranged for irradiation.

Abstract: An ion implanation apparatus comprises a first multipole electrostatic deflector and a second multipole electrostatic deflector. The first multipole electrostatic deflector comprises five or more electrodes equally spaced around an optical axis to each of which voltage for offset-deflecting the ion beam at the predetermined angle and voltage for simultaneously sweeping the ion beam in X and Y directions are applied.

Abstract: An ion implanter systems in which a deflector system comprises a first multiple pole electrostatic deflector having five or more poles for deflecting ion beams and a second multiple pole electrostatic deflector having poles of the same number as that of said first multiple pole electrostatic deflector and disposed coaxially at the rear of said first multiple pole electrostatic deflector for deflecting and pointing the ion beams deflected by said first multiple pole electrostaic deflector to a definitely predetermined direction, and said first and second deflectors are controlled so as to scan a region defined by an equilateral polygon whose sides are in number equal to or twice the poles of said each electrostatic deflector.