Patents by Inventor Yuzou Kouda

Yuzou Kouda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposited film forming apparatus
    Patent number: 5527396
    Abstract: A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
    Type: Grant
    Filed: March 3, 1995
    Date of Patent: June 18, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keishi Saitoh, Tatsuyuki Aoike, Masafumi Sano, Mitsuyuki Niwa, Jinsho Matsuyama, Toshimitsu Kariya, Yuzou Kouda, Ryou Hayashi, Masahiko Tonogaki
  • Photovoltaic device and a forming method thereof
    Patent number: 5417770
    Abstract: A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
    Type: Grant
    Filed: June 25, 1993
    Date of Patent: May 23, 1995
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keishi Saitoh, Tatsuyuki Aoike, Masafumi Sano, Mitsuyuki Niwa, Jinsho Matsuyama, Toshimitsu Kariya, Yuzou Kouda, Ryou Hayashi, Masahiko Tonogaki