Abstract: The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.

Abstract: To reduce the connection resistance between copper wirings, and to improve the reliability of the wiring such as anti-electromigration characteristics.

Abstract: A thin cartridge to which a connector of the present invention is applied has an insertion space therein which is open through an opening formed on an end face of a frame thereof. A printed circuit board having terminals patterned on an edge surface portion thereof is provided on one of surfaces defining the insertion space. The connector includes an engagement wall to be inserted into the frame as a single component for engagement with the frame of the cartridge. The engagement wall has first and second opposite faces exposed to the outside. Arrangement of contact members retained in retention grooves formed in the first face can be viewed from the side opposed to the first face.

Abstract: An air filter material having the construction of (1) an upper fibrous layer to be disposed at upper-stream position of influent air, containing 50 to 70% by weight of small diameter polyester fiber and 50 to 30% by weight of larger diameter polyester fiber, the basis weight of the layer being 25 to 45 g/m.sup.2 ; (2) an intermediate fibrous layer partially jointed to the upper layer by local intertwinement of fibers, containing 60 to 80% by weight of small diameter polyester fiber and 20 to 40% by weight of larger diameter polyester fiber, the basis weight of the intermediate layer being 40 to 60 g/m.sup.2 ; (3) a lower fibrous layer to be disposed at downstream position of the influent air, which is partially jointed to the intermediate layer by local intertwinement of fibers and which contains 60 to 80% by weight of small diameter rayon fiber and 40 to 20% by weight of larger diameter rayon fiber, the basis weight of the lower fibrous layer being 80 to 100 g/m.sup.