Abstract: A method of manufacturing a write pole that prevents P2 pedestal consumption during ion milling removal of coil and pole seed layers. The write head can be constructed by forming a first pole and then forming a magnetic pedestal (P2) over the first pole. A protective layer of, for example, alumina is deposited over a portion of the pedestal in the pole tip region, leaving a portion of the pedestal uncovered in the flare region. A coil seed layer can then be deposited and a coil formed. When the coil seed layer is removed, such as by ion milling, the pole tip region of the pedestal is protected from the ion milling by the protective layer. Similarly, a top pole can be deposited by first depositing an electrically conductive, magnetic seed layer and then plating the top pole. When the top pole seed layer is removed by ion milling, the pole tip region of the pedestal is protected from removal by the protective layer.

Abstract: Both the wafer serial number and slider region location indicia on the wafer are formed on the front surface of the wafer using optical principles, i.e., without using a laser.

Abstract: A method and apparatus for defining leading edge taper of a write pole tip is disclosed. The fabrication process uses reactive ion etching to fabricate LET with tight control of the placement of LET's edge and to achieve higher angle for providing a higher effective write field at the pole tip while minimizing ATI for high-density perpendicular recording. The placement of a resist's edge is used to define the LET's edge and a CMP process is used to provide a planar surface for the fabrication of the write pole.

Abstract: During fabrication of a write head via holes are first opened in a gap layer, followed by formation of seed layers instead of the other way around. Moreover a first seed layer is formed, and without the first seed layer being used a second seed layer is formed. The second seed layer (which is the topmost layer) is used in plating to form coils (e.g. of copper) for the write head. After coil formation, the first seed layer is used for plating to form vias (e.g. of NiFe). The two seed layers may be formed in a single operation by using two different targets in a vacuum deposition chamber. Moreover, a single insulation layer is sufficient to insulate and protect all plated elements, regardless of whether they are formed by use of the first seed layer or the second seed layer.