Abstract: The time required to perform a passive voltage contrast test of an area of interest of a layer of interest is substantially reduced by digitizing a passive voltage contrast image to form contrast data that represents the image, and comparing the contrast data to computer aided design (CAD) data that defines the semiconductor device.

Abstract: Point-by-point image contrast values are generated from secondary electron collection during unbiased electron or ion beam bombardment of an integrated circuit (IC) in a vacuum environment to quantify the physical and electrical integrity of connections within the device. These values are stored for each type of circuit cell under standard conditions to quantify and check the performance of individual cells on the device.

Abstract: The thickness of a semiconductor wafer is non-destructively measured using infrared (IR) microscopy. The wafer is placed on a stage. A distance between the stage and a detector is then varied so that a first image of the wafer is focused on the detector. When focused, a first separation distance is measured. The distance between the stage and the detector is again varied so that a second image is focused on the detector. When again focused, a second separation distance is measured. The difference between the first and second separation distances is then determined and multiplied by the refractive index of light in silicon.