Abstract: A method for measuring mechanical parameters of a multilayer composite thin film structure and belongs to the technical field of online tests of micro-electro-mechanical system (MEMS for short) material parameters. Equivalent Young modulus and equivalent residual stress of each layer of the multilayer composite thin film structure can be obtained in one step by means of solving an equation set on the basis of a relationship between first-order resonance frequency of multilayer composite fixed-fixed beams and multilayer composite cantilever beams and parameters such as material characteristics and structure size, the online test of multilayer thin film materials can be realized, the test structure and calculating method are simple, and the accuracy is higher. The present invention further discloses a device for measuring mechanical parameters of the multilayer composite thin film structure.

Abstract: A method for measuring mechanical parameters of a multilayer composite thin film structure and belongs to the technical field of online tests of micro-electro-mechanical system (MEMS for short) material parameters. Equivalent Young modulus and equivalent residual stress of each layer of the multilayer composite thin film structure can be obtained in one step by means of solving an equation set on the basis of a relationship between first-order resonance frequency of multilayer composite fixed-fixed beams and multilayer composite cantilever beams and parameters such as material characteristics and structure size, the online test of multilayer thin film materials can be realized, the test structure and calculating method are simple, and the accuracy is higher. The present invention further discloses a device for measuring mechanical parameters of the multilayer composite thin film structure.

Abstract: A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested. The second group of structures is similar to the structure of the first group with the fixed support beam removed. A residual stress testing method includes separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested, designing the bending deflection of a control testing structure according to geometrical parameters, extracting the force applied on the residual stress testing structure and utilizing force and deflection to calculate the residual stress of the thin film material to be tested.

Abstract: A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested. The second group of structures is similar to the structure of the first group with the fixed support beam removed. A residual stress testing method includes separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested, designing the bending deflection of a control testing structure according to geometrical parameters, extracting the force applied on the residual stress testing structure and utilizing force and deflection to calculate the residual stress of the thin film material to be tested.

Abstract: Disclosed is a hash fast marching method for simulation of surface evolution in a photoresist etching process, including: dividing a substrate into grids and determining an etching speed matrix, initializing a grid point time value, building a hash table and a minimum heap, marching forward and performing an update, and repeating the foregoing steps until a time value of a minimum root node is not smaller than a preset photoresist etching (photoresist development) time. In the invention method, calculation is performed only for grid points in a narrow band (NarrowBand) around the established surface, and this narrow band only has a width of one grid point, so that higher iteration efficiency is achieved.