Abstract: A separator vessel (5) comprising; a separation chamber (10) arranged to separate liquid from an inflow production fluid (45); at least one gas scrubber (15) for removing entrained liquid from a separated gas inflow from said separation chamber (10); wherein said at least one gas scrubber (15) is positioned above and proximate to said separation chamber (10), said gas scrubber (15) and separation chamber (10) connectable through a vertically oriented at least one liquid outflow conduit (20) arranged to direct the removed entrained liquid from the gas scrubber (15) to the separation chamber (10) wherein the conduit (20) is arranged such that an outflow end (22) of said conduit (20) extends into the separation chamber (10) such that it is lower than a minimum threshold liquid depth (65) in said separation chamber (10).

Abstract: A compression unit (108) for a mechanical seal, comprising a hollow cylinder (112) having a first end (317), a second end (321), a seal face (111) attached to the second end (321), and a resilient region (210) between the first end (317) and the second end (321), characterized in that the resilient region (210) is defined by a plurality of helical slots (201) passing completely through the cylinder's (112) wall, each of the slots (201) having a distinct starting (206) and end point (207) such that the slots (201) co-axially coiled around the cylinder (112) and the starting (206) and end point (207) for each helical slot (201) are spaced around the periphery of the cylinder (112).

Abstract: The present invention is a new composition of matter and can be used as components of a capacitor. The dielectric properties possess in this material has improved tremendously as compared to the existing component. The finding of high dielectric permittivity in the present invention ceramic according to its formulation and processing technique that can operate or use at wide range frequencies and temperatures are very useful in electronic and electrical devices. The present invention is best for applications at the range of temperatures. The permittivity is recorded at 1 kHz are between ˜20,000 to ˜54,000 and almost constant over three decade of frequency. Thus, the dielectric permittivity obtained can be used as energy storage, sensor, electric filter, etc., besides minimizing the devices size.

Abstract: A LED device including a first encapsulant that at least partially encapsulates a LED and resides within a light reflecting cavity, and a second encapsulant residing above the first encapsulant—wherein the first encapsulant is partially comprised of a first percentage of a first light reflecting substance. In addition, there is provided a method for constructing a LED device.

Abstract: A method of fabricating local interconnect lines (LILs) of a CMOS structures, the method comprising etching an inter layer dielectric (ILD) material of the CMOS structure at a first temperature to form one or more holes and one or more slits; and etching an etch-stop material of the CMOS structure at a second temperature lower than the first temperature to extend the holes and slits to devices of the CMOS structure.