Abstract: A phase-change material for use in a phase-change memory device is provided. The phase-change material includes at least one metal and is reversibly phase-changeable, switchable, to a detectable metallic glass state or to a detectable crystalline state thereof. There is also provided a phase-change memory, that includes at least one phase change memory cell comprising the phase change material whereby the phase-change material and thereby the phase-change memory cell is reversibly programmable to one of these states. A method of fabricating the phase-change memory is also provided.

Abstract: A phase-change material for use in a phase-change memory device is provided. The phase-change material includes at least one metal and is reversibly phase-changeable, switchable, to a detectable metallic glass state or to a detectable crystalline state thereof. There is also provided a phase-change memory, that includes at least one phase change memory cell comprising the phase change material whereby the phase-change material and thereby the phase-change memory cell is reversibly programmable to one of these states. A method of fabricating the phase-change memory is also provided.

Abstract: Magnetic materials containing a rare earth metal, and iron or a similar metal, as well as nitrogen and carbon, are produced by gas absorbing nitrogen and carbon sequentially into a parent intermetallic compound; the resulting magnetic materials have high T.sub.c, .mu..sub.o M.sub.s and .mu..sub.o H.sub.A, are essentially free of .alpha.-Fe, and have a coercivity at 300.degree. K. of at least 1.5 T. Anisotropic magnetic materials are produced by pretreating the intermetallic compound, which contains carbon, by powder sintering or oriented hot shaping, followed by nitriding and/or carbiding.